| PartNumber | SIE822DF-T1-E3 | SIE822DF-T1-GE3 | SIE832DF-T1-E3 |
| Description | MOSFET 20V Vds 20V Vgs PolarPAK | MOSFET 20V Vds 20V Vgs PolarPAK | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PolarPAK-10 | - | PolarPAK-10 |
| Tradename | TrenchFET, PolarPAK | TrenchFET, PolarPAK | TrenchFET, PolarPAK |
| Packaging | Reel | Reel | Reel |
| Height | 0.8 mm | - | 0.8 mm |
| Length | 6.15 mm | - | 6.15 mm |
| Series | SIE | SIE | SIE |
| Width | 5.16 mm | - | 5.16 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIE822DF-E3 | SIE822DF-GE3 | SIE832DF-E3 |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
|
Vishay / Siliconix |
SIE822DF-T1-E3 | MOSFET 20V Vds 20V Vgs PolarPAK | |
| SIE874DF-T1-GE3 | MOSFET 20V 60A N-CH MOSFET | ||
| SIE822DF-T1-GE3 | MOSFET 20V Vds 20V Vgs PolarPAK | ||
| SIE850DF-T1-GE3 | MOSFET 30V 164A 104W 2.5mohm @ 10V | ||
| SIE850DF-T1-E3 | MOSFET 30V 164A 104W 2.5mohm @ 10V | ||
| SIE848DF-T1-E3 | MOSFET RECOMMENDED ALT 781-SI7658ADP-T1-GE3 | ||
| SIE836DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7450DP-T1-GE3 | ||
| SIE832DF-T1-E3 | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | ||
| SIE860DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7658ADP-T1-GE3 | ||
| SIE854DF-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIR846ADP-T1-GE3 | ||
| SIE844DF-T1-GE3 | MOSFET 30V 44.5A 25W 7.0mohm @ 10V | ||
| SIE876DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | ||
| SIE868DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | ||
| SIE860DF-T1-E3 | MOSFET RECOMMENDED ALT 781-SI7658ADP-T1-GE3 | ||
| SIE848DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7658ADP-T1-GE3 | ||
| SIE832DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | ||
| SIE850DF-T1-E3 | RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V | ||
| SIE850DF-T1-GE3 | RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V | ||
Vishay |
SIE876DF-T1-GE3 | IGBT Transistors MOSFET 60V 110A 125W 6.1mohm @ 10V | |
| SIE830DF-T1-E3 | RF Bipolar Transistors MOSFET 30V 50A 104W | ||
| SIE830DF-T1-GE3 | RF Bipolar Transistors MOSFET 30V 120A 104W 4.2mohm @ 10V | ||
| SIE832DF-T1-E3 | RF Bipolar Transistors MOSFET 40V 50A 104W | ||
| SIE820DF-T1-E3 | RF Bipolar Transistors MOSFET 20V 50A 104W 3.5mohm @ 4.5V | ||
| SIE832DF-T1-GE3 | RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V | ||
| SIE822DF-T1-E3 | RF Bipolar Transistors MOSFET 20V 50A 104W 3.4mohm @ 10V | ||
| SIE868DF-T1-GE3 | RF Bipolar Transistors MOSFET 40V 169A 125W 2.3mohm @ 10V | ||
| SIE822DF-T1-GE3 | RF Bipolar Transistors MOSFET 20V 138A 104W 3.4mohm @ 10V | ||
| SIE874DF-T1-GE3 | RF Bipolar Transistors MOSFET 20V 60A N-CH MOSFET | ||
| SIE860DF-T1-E3 | RF Bipolar Transistors MOSFET 30V 178A 104W 2.1mohm @ 10V | ||
| SIE836DF-T1-E3 | RF Bipolar Transistors MOSFET 200V 18.3A 104W 130mohm @ 10V | ||
| SIE844DF-T1-E3 | RF Bipolar Transistors MOSFET 30V 44.5A 25W 7.0mohm @ 10V | ||
| SIE848DF-T1-E3 | MOSFET N-CH 30V 60A POLARPAK | ||
| SIE848DF-T1-GE3 | MOSFET N-CH 30V 60A POLARPAK | ||
| SIE854DF-T1-E3 | MOSFET N-CH 100V 60A POLARPAK | ||
| SIE862DF-T1-GE3 | MOSFET N-CH 30V 50A POLARPAK | ||
| SIE864DF-T1-GE3 | MOSFET N-CH 30V 45A POLARPAK | ||
| SIE820DF-T1-GE3 | MOSFET N-CH 20V 50A POLARPAK | ||
| SIE836DF-T1-GE3 | MOSFET N-CH 200V 18.3A POLARPAK | ||
| SIE844DF-T1-GE3 | MOSFET N-CH 30V 44.5A POLARPAK | ||
| SIE854DF-T1-GE3 | MOSFET N-CH 100V 60A POLARPAK | ||
| SIE860DF-T1-GE3 | MOSFET N-CH 30V 60A POLARPAK | ||
| SIE822DF-T1-E3CT | नयाँ र मौलिक | ||
| SIE832DF | नयाँ र मौलिक | ||
| SIE832DFT1GE3 | Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIE836DF | नयाँ र मौलिक | ||
| SIE864DP-T1-GE3 | नयाँ र मौलिक | ||
| SIE868DF | नयाँ र मौलिक | ||
| SIE868DFT1GE3 | Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIE8756 | नयाँ र मौलिक | ||
| SIE876DF-T1-E3 | नयाँ र मौलिक |