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SIE868DFT1GE3

SIE868DFT1GE3
Mfr. #:
SIE868DFT1GE3
निर्माता:
Vishay Intertechnologies
विवरण:
Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIE868DFT1GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
SIE868, SIE86, SIE8, SIE
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
SIE868DF-T1-GE3
DISTI # V72:2272_09215715		Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 35A 10-Pin PolarPAK T/R
RoHS: Compliant		1992
  • 75000:$1.0771
  • 30000:$1.0893
  • 15000:$1.1014
  • 6000:$1.1135
  • 3000:$1.1256
  • 1000:$1.1378
  • 500:$1.4157
  • 250:$1.4519
  • 100:$1.6133
  • 50:$1.6894
  • 25:$1.8771
  • 10:$2.0856
  • 1:$2.7465
SIE868DF-T1-GE3
DISTI # SIE868DF-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$1.1057
  • 3000:$1.1482
SIE868DF-T1-GE3
DISTI # SIE868DF-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 60A POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIE868DF-T1-GE3
DISTI # SIE868DF-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 60A POLARPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIE868DF-T1-GE3
DISTI # 31355155		Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 35A 10-Pin PolarPAK T/R
RoHS: Compliant		1992
  • 7:$2.7465
SIE868DF-T1-GE3
DISTI # 781-SIE868DF-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SIE818DF-GE3
RoHS: Compliant		0
    SIE868DFT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      छवि भाग # विवरण
      SIE868DF-T1-GE3

      Mfr.#: SIE868DF-T1-GE3

      OMO.#: OMO-SIE868DF-T1-GE3

      		 MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
      SIE868DF-T1-GE3

      Mfr.#: SIE868DF-T1-GE3

      OMO.#: OMO-SIE868DF-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 40V 169A 125W 2.3mohm @ 10V
      SIE868DF

      Mfr.#: SIE868DF

      OMO.#: OMO-SIE868DF-1190

      		 नयाँ र मौलिक
      SIE868DFT1GE3

      Mfr.#: SIE868DFT1GE3

      OMO.#: OMO-SIE868DFT1GE3-1190

      		 Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3500
      मात्रा प्रविष्ट गर्नुहोस्:
      SIE868DFT1GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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