| PartNumber | SI2329DS-T1-GE3 | SI2328DS-T1-E3 | SI2328DS-T1-GE3 |
| Description | MOSFET -8V Vds 5V Vgs SOT-23 | MOSFET 100V Vds 20V Vgs SOT-23 | MOSFET 100V Vds 20V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 8 V | - | 100 V |
| Id Continuous Drain Current | 6 A | - | 1.15 A |
| Rds On Drain Source Resistance | 30 mOhms | - | 250 mOhms |
| Vgs th Gate Source Threshold Voltage | 350 mV | - | 2 V |
| Vgs Gate Source Voltage | 4.5 V | - | 10 V |
| Qg Gate Charge | 19.3 nC | - | 3.3 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 2.5 W | - | 0.73 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 P-Channel | - | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 2 S | - | 4 S |
| Fall Time | 20 ns | - | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | - | 11 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 46 ns | - | 9 ns |
| Typical Turn On Delay Time | 20 ns | - | 7 ns |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Height | - | 1.45 mm | 1.45 mm |
| Length | - | 2.9 mm | 2.9 mm |
| Width | - | 1.6 mm | 1.6 mm |
| Part # Aliases | - | SI2328DS-E3 | SI2328DS-GE3 |