SI2329DS-T1-GE3

Mfr. #:: SI2329DS-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET -8V Vds 5V Vgs SOT-23
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI2329DS-T1-GE3 डाटा पाना
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HTML Datasheet:: SI2329DS-T1-GE3 Datasheet SI2329DS-T1-GE3 Datasheet (P4-P6)SI2329DS-T1-GE3 Datasheet (P7-P9)SI2329DS-T1-GE3 Datasheet (P10)
ECAD Model:
थप जानकारी:: SI2329DS-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: SOT-23-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 8 V

आईडी - निरन्तर ड्रेन वर्तमान:: 6 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 30 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 350 mV

Vgs - गेट-स्रोत भोल्टेज:: 4.5 V

Qg - गेट चार्ज:: 19.3 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 2.5 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

शृङ्खला:: SI2

ट्रान्जिस्टर प्रकार:: 1 P-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 2 S

पतन समय:: 20 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 22 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 46 ns

सामान्य टर्न-अन ढिलाइ समय:: 20 ns

एकाइ वजन:: 0.000282 oz

Tags: SI232, SI23, SI2

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2329DS-T1-GE3 विवरण

***ler Electronic: VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV

***ure Electronics: Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3

***ied Electronics & Automation: SI2329DS-T1-GE3 P-channel MOSFET Transistor; 6 A; 8 V; 3-Pin TO-236

***enic: 8V 6A 2.5W 30m´Î@4.5V5.3A 800mV@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***nell: MOSFET, P-CH, 8V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SI2329DS-T1-GE3 थप जानकारी

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI2329DS-T1-GE3 DISTI # V72:2272_07433101	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant	111	100:$0.4330 25:$0.5115 10:$0.6251 1:$0.7690
SI2329DS-T1-GE3 DISTI # V36:1790_07433101	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.2454 1500000:$0.2456 300000:$0.2560 30000:$0.2716 3000:$0.2741
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 8V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9053In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 8V 6A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9053In Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 8V 6A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1995 15000:$0.2047 6000:$0.2126 3000:$0.2284
SI2329DS-T1-GE3 DISTI # 32435712	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant	111	31:$0.7690
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	150000:$0.2723 75000:$0.2769 30000:$0.2817 15000:$0.2918 9000:$0.3026 6000:$0.3142 3000:$0.3268
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1899 18000:€0.2049 12000:€0.2219 6000:€0.2579 3000:€0.3779
SI2329DS-T1-GE3 DISTI # SI2329DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2329DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI2329DS-T1-GE3 DISTI # 63W4143	Vishay Intertechnologies	MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV RoHS Compliant: Yes	32256	1000:$0.2850 500:$0.3350 100:$0.3960 50:$0.4320 25:$0.4690 10:$0.5050 1:$0.6210
SI2329DS-T1-GE3 DISTI # 70616155	Vishay Siliconix	SI2329DS-T1-GE3 P-channel MOSFET Transistor,6 A,8 V,3-Pin TO-236 RoHS: Compliant	0	300:$0.4900 600:$0.4800 1500:$0.4700 3000:$0.4500 7500:$0.4200
SI2329DS-T1-GE3 DISTI # 78-SI2329DS-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 5V Vgs SOT-23 RoHS: Compliant	20267	1:$0.5900 10:$0.4780 100:$0.3630 500:$0.3000 1000:$0.2400 3000:$0.2170 6000:$0.2020 9000:$0.1950
SI2329DS-T1-GE3 DISTI # 8123114P	Vishay Intertechnologies	TRANS MOSFET P-CH 8V 5.3A 3-PIN, RL	7800	3000:£0.2160 1500:£0.2190 600:£0.2500 300:£0.3020
SI2329DS-T1-GE3	Vishay Intertechnologies		2934
SI2329DS-T1-GE3 DISTI # 2283643	Vishay Intertechnologies	MOSFET, P-CH, 8V, 6A, SOT23 RoHS: Compliant	31934	500:$0.4520 100:$0.5490 10:$0.7220 1:$0.9040
SI2329DS-T1-GE3 DISTI # 2283643	Vishay Intertechnologies	MOSFET, P-CH, 8V, 6A, SOT23	31531	500:£0.2340 250:£0.2590 100:£0.2840 10:£0.4150 1:£0.5340
SI2329DS-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 5V Vgs SOT-23 RoHS: Compliant	Americas -

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	Mfr.#: TPS61021ADSGR OMO.#: OMO-TPS61021ADSGR	Switching Voltage Regulators TPS VERSION FOR NONE-CF CUSTOMER
	Mfr.#: TPS61230ARNSR OMO.#: OMO-TPS61230ARNSR	Switching Voltage Regulators 5-V/6-A High Efficiency Step-Up Converter in 2.0-mm x 2.0-mm QFN Package 7-VQFN-HR -40 to 125
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	Mfr.#: XB8X-DMUS-001 OMO.#: OMO-XB8X-DMUS-001	RF Modules XBee SX 868, 25mW DigiMesh, U.FL
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	Mfr.#: 105017-0001 OMO.#: OMO-105017-0001-1190	MICRO USB, 2.0 TYPE B, RECEPTACLE, SMT, USB Connector Type:Micro USB Type B, USB Standard:USB 2.0, Gender:Receptacle, No. of Positions:5Positions, Connector Mounting:Surface Mount, Orientation:R
	Mfr.#: ABS06-32.768KHZ-1-T OMO.#: OMO-ABS06-32-768KHZ-1-T-ABRACON	Crystals 32.768KHz 12.5pF 10ppm -40C +85C
	Mfr.#: TPS61021ADSGR OMO.#: OMO-TPS61021ADSGR-TEXAS-INSTRUMENTS	IC REG BOOST ADJUSTABLE 3A 8WSON

उपलब्धता

स्टक:: 20
अर्डर मा:: 2003
मात्रा प्रविष्ट गर्नुहोस्:

SI2329DS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.५९~~; ~~US$ ०.५९~~

10: ~~US$ ०.४८~~; ~~US$ ४.७८~~

100: ~~US$ ०.३६~~; ~~US$ ३६.३०~~

500: ~~US$ ०.३०~~; ~~US$ १५०.००~~

1000: ~~US$ ०.२४~~; ~~US$ २४०.००~~

बाट सुरु गर्नुहोस्

SI232 45
SI23 561
SI2 1125

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SI2329DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes