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| PartNumber | RN1130MFV,L3F | RN1131MFV(TL3,T) | RN1130MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | N |
| Configuration | Single | Single | Single |
| Transistor Polarity | NPN | NPN | NPN |
| Typical Input Resistor | 100 kOhms | 100 kOhms | 100 kOhms |
| Typical Resistor Ratio | 1 | - | 1 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-723-3 | SOT-723 | VESM-3 |
| DC Collector/Base Gain hfe Min | 100 | 120 | 100 |
| Maximum Operating Frequency | 250 MHz | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
| Continuous Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 150 mW | 150 mW | 150 mW |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | RN1130MFV | RN1131MFV | RN1130MFV |
| Packaging | Reel | Reel | Reel |
| Emitter Base Voltage VEBO | 10 V | 5 V | 10 V |
| Brand | Toshiba | Toshiba | Toshiba |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Maximum DC Collector Current | - | 100 mA | - |
| Peak DC Collector Current | - | - | 100 mA |
| Minimum Operating Temperature | - | - | - 65 C |
| Collector Base Voltage VCBO | - | - | 50 V |
| DC Current Gain hFE Max | - | - | 100 |
| Height | - | - | 0.5 mm |
| Length | - | - | 1.2 mm |
| Operating Temperature Range | - | - | - 65 C to + 150 C |
| Type | - | - | NPN Epitaxial Silicon Transistor |
| Width | - | - | 0.8 mm |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
RN1130MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | |
| RN1132MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 200Kohms x 0ohms | ||
| RN1131MFV(TL3,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| RN1132MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 200kohm | ||
| RN1132MFV(TL3,T) | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 200kohm | ||
| RN1131MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms | ||
| RN1130MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms | ||
Switchcraft |
RN113BPC | Phone Connectors 3C RT ANG 1/4" | |
| RN113FPC | Phone Connectors 3C TIP OPEN RNG CLSD 1/4" R/A HD JK | ||
| RN113BPC | Phone Connectors 3C RT ANG 1/4" | ||
| RN1130MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms | ||
| RN1132MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 200Kohms x 0ohms | ||
| RN1131MFV(TL3,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| RN1131MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms | ||
| RN1130MFVL3XGF | नयाँ र मौलिक | ||
| RN1130MFVTPL3 | नयाँ र मौलिक | ||
| RN1130MFVL3FCT-ND | नयाँ र मौलिक | ||
| RN1130MFVL3FDKR-ND | नयाँ र मौलिक | ||
| RN1130MFVL3FTR-ND | नयाँ र मौलिक | ||
| RN1131MFV(TL3T)CT-ND | नयाँ र मौलिक | ||
| RN1131MFV(TL3T)DKR-ND | नयाँ र मौलिक | ||
| RN1131MFV(TL3T)TR-ND | नयाँ र मौलिक | ||
| RN1132MFVL3F-ND | नयाँ र मौलिक | ||
| RN1130F | नयाँ र मौलिक | ||
| RN1130MFV | नयाँ र मौलिक | ||
| RN1130MFV TPL3 | नयाँ र मौलिक | ||
| RN1130MFV(TL3,T) | नयाँ र मौलिक | ||
| RN1130MFV(TL3T) | नयाँ र मौलिक | ||
| RN1131MFV | नयाँ र मौलिक | ||
| RN1131MFV(TL3T) | नयाँ र मौलिक | ||
| RN1132FV | नयाँ र मौलिक | ||
| RN1132MFV | नयाँ र मौलिक | ||
| RN1132MFV,L3F | X34 PB-F VESM TRANSISTOR PD 150M | ||
| RN1133 | नयाँ र मौलिक | ||
| RN1133GQW | नयाँ र मौलिक | ||
| RN1133GQW QFN | नयाँ र मौलिक |