RN110

RN1106MFV,L3F vs RN1107(T5L,F,T) vs RN1106MFV(TPL3)

 
PartNumberRN1106MFV,L3FRN1107(T5L,F,T)RN1106MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEOBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEOBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
ConfigurationSingleSingleSingle
Transistor PolarityNPNNPNNPN
Typical Input Resistor4.7 kOhms10 kOhms4.7 kOhms
Typical Resistor Ratio0.10.2130.1
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-723-3SOT-416-3-
DC Collector/Base Gain hfe Min808080
Maximum Operating Frequency---
Collector Emitter Voltage VCEO Max50 V50 V50 V
Continuous Collector Current100 mA100 mA100 mA
Peak DC Collector Current--100 mA
Pd Power Dissipation150 mW100 mW150 mW
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesRN1106MFVRN1107RN1106MFV
Emitter Base Voltage VEBO5 V6 V-
BrandToshibaToshibaToshiba
Channel ModeEnhancement--
Maximum DC Collector Current100 mA100 mA-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity800030008000
SubcategoryTransistorsTransistorsTransistors
Packaging-ReelReel
Unit Weight-0.000212 oz-
DC Current Gain hFE Max--80
  • बाट सुरु गर्नुहोस्
  • RN110 262
  • RN11 535
  • RN1 1899
निर्माता भाग # विवरण RFQ
Toshiba
Toshiba
RN1107,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN1106MFV,L3F Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1107(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1107MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 47Kohms
RN1106MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms
RN1107MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 47Kohms
RN1107,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
RN1107(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1106MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms
RN1108(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1106MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1107CT नयाँ र मौलिक
RN1108ACT नयाँ र मौलिक
RN1107LF नयाँ र मौलिक
RN1106MFVL3XGF नयाँ र मौलिक
RN1106MFV(TL3T)CT-ND नयाँ र मौलिक
RN1106MFV(TL3T)DKR-ND नयाँ र मौलिक
RN1106MFV(TL3T)TR-ND नयाँ र मौलिक
RN1106MFVL3FCT-ND नयाँ र मौलिक
RN1106MFVL3FDKR-ND नयाँ र मौलिक
RN1106MFVL3FTR-ND नयाँ र मौलिक
RN1107ACT(TPL3)CT-ND नयाँ र मौलिक
RN1107ACT(TPL3)DKR-ND नयाँ र मौलिक
RN1107ACT(TPL3)TR-ND नयाँ र मौलिक
RN1107CT(TPL3)CT-ND नयाँ र मौलिक
RN1107CT(TPL3)DKR-ND नयाँ र मौलिक
RN1107CT(TPL3)TR-ND नयाँ र मौलिक
RN1107LF(CTCT-ND नयाँ र मौलिक
RN1107LF(CTDKR-ND नयाँ र मौलिक
RN1107LF(CTTR-ND नयाँ र मौलिक
RN1108(T5LFT)CT-ND नयाँ र मौलिक
RN1108(T5LFT)DKR-ND नयाँ र मौलिक
RN1108(T5LFT)TR-ND नयाँ र मौलिक
RN1107LF(CT Bipolar Transistors - Pre-Biased SMALL SIGNAL TRAN 100MW /1MHZ
RN1108(F) TRANSISTOR DIGITAL NPN RN1108(F), PK
RN1107(TE85L) नयाँ र मौलिक
RN1107(TE85L,F) Trans Digital BJT NPN 50V 100mA 3-Pin SSM T/R
RN1106MFV(TL3T) नयाँ र मौलिक
RN1106MFV,L3F(T नयाँ र मौलिक
RN1107 नयाँ र मौलिक
RN1107 TE85L.F नयाँ र मौलिक
RN1107ACT नयाँ र मौलिक
RN1107FS नयाँ र मौलिक
RN1107FT नयाँ र मौलिक
RN1107FV नयाँ र मौलिक
RN1107MFV(TL3PAV) नयाँ र मौलिक
RN1108 नयाँ र मौलिक
RN1107MF नयाँ र मौलिक
RN1107MFV नयाँ र मौलिक
RN1107MFV TPL3 नयाँ र मौलिक
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