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| PartNumber | PSMN1R5-30BLEJ | PSMN1R5-30YL,115 | PSMN1R5-25YL,115 |
| Description | MOSFET N-channel 30 V 1.5 mo FET | MOSFET N-CHAN 30V 100A | MOSFET N-CH TRENCHMOS Logic level FET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | LFPAK56-5 | LFPAK56-5 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 25 V |
| Id Continuous Drain Current | 120 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 1.3 mOhms | 1.5 mOhms | 1.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 228 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 401 W | 109 W | 109 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 99.2 ns | - | 36 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 156.1 ns | - | 97 ns |
| Factory Pack Quantity | 800 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 191.8 ns | - | 72 ns |
| Typical Turn On Delay Time | 100.6 ns | - | 50 ns |
| Unit Weight | 0.139332 oz | - | 0.003002 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Nexperia |
PSMN1R7-25YLDX | MOSFET PSMN1R7-25YLD/LFPAK/REEL 7" Q1 | |
| PSMN1R5-30BLEJ | MOSFET N-channel 30 V 1.5 mo FET | ||
| PSMN1R5-30YLC,115 | MOSFET N-Ch 30V 1.55mOhms | ||
| PSMN1R7-60BS,118 | MOSFET Std N-chanMOSFET | ||
| PSMN1R7-30YL,115 | MOSFET <=30V N CH TRENCHFET | ||
| PSMN1R5-30YL,115 | MOSFET N-CHAN 30V 100A | ||
| PSMN1R5-25YL,115 | MOSFET N-CH TRENCHMOS Logic level FET | ||
| PSMN1R5-40ES,127 | MOSFET N-Ch 40V 1.6 mOhms | ||
| PSMN1R5-40PS,127 | MOSFET N-Ch 40V 1.6 mOhms | ||
| PSMN1R6-30BL,118 | MOSFET Std N-chanMOSFET | ||
| PSMN1R6-30MLHX | MOSFET PSMN1R6-30MLH/SOT1210/mLFPAK | ||
| PSMN1R6-60CLJ | MOSFET PSMN1R6-60CL/D2PAK/ | ||
| PSMN1R5-30YL,115 | MOSFET N-CH 30V LFPAK | ||
| PSMN1R6-60CLJ | MOSFET N-CH 60V D2PAK | ||
| PSMN1R5-30YLC,115 | MOSFET N-CH 30V 100A LFPAK | ||
| PSMN1R6-40YLC,115 | MOSFET N-CH 40V 100A LFPAK-SO8 | ||
| PSMN1R7-30YL,115 | MOSFET N-CH 30V 100A LFPAK | ||
| PSMN1R7-60BS,118 | MOSFET N-CH 60V 120A D2PAK | ||
| PSMN1R6-30PL,127 | Darlington Transistors MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET | ||
| PSMN1R5-25YL,115 | IGBT Transistors MOSFET N-CH TRENCHMOS Logic level FET | ||
| PSMN1R5-40ES,127 | MOSFET N-Ch 40V 1.6 mOhms | ||
| PSMN1R6-30BL,118 | RF Bipolar Transistors MOSFET Std N-chanMOSFET | ||
| PSMN1R5-40PS,127 | MOSFET N-CH 40V 120A TO220AB | ||
| PSMN1R5-30BLEJ | MOSFET N-CH 30V 120A D2PAK | ||
| PSMN1R6-30MLHX | PSMN1R6-30MLH/SOT1210/MLFPAK | ||
| PSMN1R7-25YLDX | PSMN1R7-25YLD/LFPAK/REEL 7 Q1 | ||
| PSMN1R5-30BLE | नयाँ र मौलिक | ||
| PSMN1R7 | नयाँ र मौलिक | ||
| PSMN1R7-30YL | नयाँ र मौलिक | ||
| PSMN1R7-60BS | Trans MOSFET N-CH 60V 120A 3-Pin SOT-404 (Alt: PSMN1R7-60BS) | ||
| PSMN1R5-30BLE118 | Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| PSMN1R6-40YLC:115 | Darlington Transistors MOSFET N-channel 40 V 1.55 mo FET | ||
| PSMN1R5-30YL115 | Now Nexperia PSMN1R5-30YL - Power Field-Effect Transistor, 100A I(D), 35V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
| PSMN1R5-30YLC | नयाँ र मौलिक | ||
| PSMN1R5-30YLC.115 | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R5-30YLC,115) | ||
| PSMN1R5-30YLC115 | - Bulk (Alt: PSMN1R5-30YLC115) | ||
| PSMN1R5-40ES127 | Now Nexperia PSMN1R5-40ES - Power Field-Effect Transistor, 120A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| PSMN1R5-40PS | नयाँ र मौलिक | ||
| PSMN1R5-40PS127 | Now Nexperia PSMN1R5-40PS - Power Field-Effect Transistor, 120A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN1R6-30BL118 | Now Nexperia PSMN1R6-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PSMN1R6-30PL | MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V, | ||
| PSMN1R6-30PL127 | Now Nexperia PSMN1R6-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN1R6-40YLC | नयाँ र मौलिक | ||
| PSMN1R6-40YLC115 | नयाँ र मौलिक | ||
| PSMN1R7-25YLC115 | Now Nexperia PSMN1R7-25YLC - Power Field-Effect Transistor, 100A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
| PSMN1R7-30YL+115 | Now Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
| PSMN1R7-30YL115 | Now Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
| PSMN1R5-30YLC,115-CUT TAPE | नयाँ र मौलिक | ||
| PSMN1R7-25YLC | नयाँ र मौलिक | ||
NXP Semiconductors |
PSMN1R7-25YLC,115 | IGBT Transistors MOSFET N-Ch 25V 1.9 mOhms |