PSMN1R5-30BLEJ

Mfr. #:: PSMN1R5-30BLEJ
निर्माता:: Nexperia
विवरण:: MOSFET N-CH 30V 120A D2PAK
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: PSMN1R5-30BLEJ डाटा पाना
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थप जानकारी:: PSMN1R5-30BLEJ थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: NXP अर्धचालक

उत्पादन कोटि: FETs - एकल

शृङ्खला: -

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

एकाइ - वजन: 0.139332 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 175°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 1 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: D2PAK

कन्फिगरेसन: एकल

FET-प्रकार: MOSFET एन-च्यानल, धातु अक्साइड

पावर-अधिकतम: 401W

ट्रान्जिस्टर-प्रकार: 1 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 30V

इनपुट-Capacitance-Ciss-Vds: 14934pF @ 15V

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 120A (Tc)

Rds-on-max-Id-Vgs: 1.5 mOhm @ 25A, 10V

Vgs-th-max-Id: 2.15V @ 1mA

गेट-चार्ज-Qg-Vgs: 228nC @ 10V

Pd-शक्ति-डिसिपेशन: 401 W

अधिकतम-सञ्चालन-तापमान: + 175 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 99.2 ns

उदय-समय: 156.1 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 120 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 30 V

Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज: 1.7 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 1.3 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 191.8 ns

सामान्य-टर्न-अन-डिले-समय: 100.6 ns

Qg-गेट-चार्ज: 228 nC

च्यानल-मोड: वृद्धि

Tags: PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM

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PSMN1R5-30BLEJ विवरण

***peria: PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK

***ure Electronics: Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package

***p One Stop Japan: Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET N-CH 30V D2PAK

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C

***nell: MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C

PSMN1R5-30BLEJ थप जानकारी

PSMN N-Channel MOSFETs: Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
PSMN1R5-30BLEJ DISTI # V36:1790_06540853	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R	0
PSMN1R5-30BLEJ DISTI # V72:2272_06540853	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R	0
PSMN1R5-30BLEJ DISTI # 1727-1101-1-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	332In Stock	100:$2.0996 10:$2.6120 1:$2.9100
PSMN1R5-30BLEJ DISTI # 1727-1101-6-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	332In Stock	100:$2.0996 10:$2.6120 1:$2.9100
PSMN1R5-30BLEJ DISTI # 1727-1101-2-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	On Order	1600:$1.4430 800:$1.7110
PSMN1R5-30BLEJ DISTI # PSMN1R5-30BLEJ	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	48000:$1.2418 24000:$1.2725 14400:$1.3047 9600:$1.3386 4800:$1.3562
PSMN1R5-30BLEJ DISTI # PSMN1R5-30BLEJ	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0
PSMN1R5-30BLEJ. DISTI # 23AC9025	Nexperia	Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins	0	48000:$1.2500 24000:$1.2800 14400:$1.3100 9600:$1.3400 1:$1.3600
PSMN1R5-30BLEJ DISTI # 771-PSMN1R5-30BLEJ	Nexperia	MOSFET N-channel 30 V 1.5 mo FET RoHS: Compliant	3854	1:$2.7200 10:$2.3100 100:$2.0100 250:$1.9000 500:$1.7100 800:$1.4400 2400:$1.3700 4800:$1.3200
PSMN1R5-30BLEJ DISTI # 2281225	Nexperia	MOSFET, N-CH, 30V, 120A, D2PAK RoHS: Compliant	0	2500:$2.0900 1000:$2.2000 500:$2.3100 250:$2.4300 100:$2.5800 25:$2.8000 10:$3.1300 1:$3.4600
PSMN1R5-30BLEJ DISTI # 2281225	Nexperia	MOSFET, N-CH, 30V, 120A, D2PAK RoHS: Compliant	0	500:£1.1100 250:£1.4600 100:£1.5600 10:£1.7800 1:£2.3700

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: PSMN1R5-40ES,127 OMO.#: OMO-PSMN1R5-40ES-127	MOSFET N-Ch 40V 1.6 mOhms
	Mfr.#: PSMN1R5-30YL,115 OMO.#: OMO-PSMN1R5-30YL-115-NEXPERIA	MOSFET N-CH 30V LFPAK
	Mfr.#: PSMN1R5-25YL OMO.#: OMO-PSMN1R5-25YL-1190	नयाँ र मौलिक
	Mfr.#: PSMN1R5-30BLE118 OMO.#: OMO-PSMN1R5-30BLE118-1190	Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: PSMN1R5-30YL115 OMO.#: OMO-PSMN1R5-30YL115-1190	Now Nexperia PSMN1R5-30YL - Power Field-Effect Transistor, 100A I(D), 35V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
	Mfr.#: PSMN1R5-30YLC,115 OMO.#: OMO-PSMN1R5-30YLC-115-NEXPERIA	MOSFET N-CH 30V 100A LFPAK
	Mfr.#: PSMN1R5-30YLC.115 OMO.#: OMO-PSMN1R5-30YLC-115-1190	Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R5-30YLC,115)
	Mfr.#: PSMN1R5-30YLC115 OMO.#: OMO-PSMN1R5-30YLC115-1190	- Bulk (Alt: PSMN1R5-30YLC115)
	Mfr.#: PSMN1R5-25YL,115 OMO.#: OMO-PSMN1R5-25YL-115-NEXPERIA	IGBT Transistors MOSFET N-CH TRENCHMOS Logic level FET
	Mfr.#: PSMN1R5-40PS,127 OMO.#: OMO-PSMN1R5-40PS-127-NEXPERIA	MOSFET N-CH 40V 120A TO220AB

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
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सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.८६~~; ~~US$ १.८६~~

10: ~~US$ १.७७~~; ~~US$ १७.७०~~

100: ~~US$ १.६८~~; ~~US$ १६७.६४~~

500: ~~US$ १.५८~~; ~~US$ ७९१.६५~~

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2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

PSMN1R5-30B 3
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PSMN 889
PSM 1624

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PSMN1R5-30BLEJ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes