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| PartNumber | NTGD4169FT1G | NTGD4161PT1G | NTGD4167CT1G |
| Description | MOSFET FETKY 30V 2.6A 90MO TSOP6 | MOSFET PFET TSOP6 20V 2.3A 160mOhm | MOSFET COMP 30V 2.9A 0.090 TSOP6 |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 2.6 A | 2.1 A | 2.6 A, 1.9 A |
| Rds On Drain Source Resistance | 90 mOhms | 160 mOhms | 90 mOhms, 300 mOhms |
| Vgs Gate Source Voltage | 12 V | 20 V | 4.5 V, - 2.5 V |
| Minimum Operating Temperature | - 25 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 900 mW | 1.1 W | 1.1 W |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.94 mm | 0.94 mm | 0.94 mm |
| Length | 3 mm | 3 mm | 3 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Transistor Type | 1 N-Channel | 2 P-Channel | 1 N-Channel, 1 P-Channel |
| Width | 1.5 mm | 1.5 mm | 1.5 mm |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Fall Time | 4 ns | 9.2 ns | 2 ns, 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 9.2 ns | 4 ns, 8 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 12.5 ns | 14 ns, 22 ns |
| Typical Turn On Delay Time | 7 ns | 7.6 ns | 7 ns, 8 ns |
| Unit Weight | 0.000705 oz | 0.000705 oz | 0.000705 oz |
| Type | - | FETs - MOSFETs | - |
| Forward Transconductance Min | - | 2.7 S | 2.6 S, 2.6 S |
| Vgs th Gate Source Threshold Voltage | - | - | 500 mV |
| Qg Gate Charge | - | - | 3.7 nC, 3.9 nC |
| Series | - | - | NTGD4167C |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor |
NTGD4169FT1G | MOSFET FETKY 30V 2.6A 90MO TSOP6 | |
| NTGD4161PT1G | MOSFET PFET TSOP6 20V 2.3A 160mOhm | ||
| NTGD4167CT1G | MOSFET COMP 30V 2.9A 0.090 TSOP6 | ||
| NTGD4161PT1G | MOSFET 2P-CH 30V 1.5A 6-TSOP | ||
| NTGD4169FT1G | MOSFET N-CH 30V 2.6A 6-TSOP | ||
| NTGD4167CT1G | IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6 | ||
| NTGD4167C | नयाँ र मौलिक | ||
| NTGD4167CT1 | नयाँ र मौलिक | ||
| NTGD4167CT1G SI3590DV- | नयाँ र मौलिक | ||
| NTGD4167CTTGR | नयाँ र मौलिक | ||
| NTGD4167PT1G | नयाँ र मौलिक |