NTGD4167CT1G

Mfr. #:: NTGD4167CT1G
निर्माता:: ON Semiconductor
विवरण:: IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: NTGD4167CT1G डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: ON

उत्पादन कोटि: FETs - arrays

शृङ्खला: NTGD4167C

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

एकाइ - वजन: 0.000705 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: SOT-23-6 Thin, TSOT-23-6

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 6-TSOP

कन्फिगरेसन: N- च्यानल P- च्यानल

FET-प्रकार: N र P- च्यानल

पावर-अधिकतम: 900mW

ट्रान्जिस्टर-प्रकार: 1 N-Channel 1 P-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 30V

इनपुट-Capacitance-Ciss-Vds: 295pF @ 15V

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 2.6A, 1.9A

Rds-on-max-Id-Vgs: 90 mOhm @ 2.6A, 4.5V

Vgs-th-max-Id: 1.5V @ 250μA

गेट-चार्ज-Qg-Vgs: 5.5nC @ 4.5V

Pd-शक्ति-डिसिपेशन: 1.1 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 4 ns 8 ns

उदय-समय: 4 ns 8 ns

Vgs-गेट-स्रोत-भोल्टेज: 12 V

आईडी-निरन्तर-नाली-वर्तमान: 2.2 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 30 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 90 mOhms 170 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल P- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 14 ns 22 ns

सामान्य-टर्न-अन-डिले-समय: 7 ns 8 ns

च्यानल-मोड: वृद्धि

Tags: NTGD4167CT1, NTGD4167CT, NTGD4167C, NTGD4167, NTGD4, NTGD, NTG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTGD4167CT1G विवरण

***ied Electronics & Automation: NTGD4167CT1G N/P-channel MOSFET Transistor; 2.2 A; 2.9 A; 30 V; 6-Pin TSOP

***th Star Micro: NTGD4167C: Small Signal MOSFET 30V 2.6A 90 mOhm Dual Complementary TSOP-6

***ure Electronics: Dual Channel N & P 30 V 90 mOhm 900 mW Surface Mount Power Mosfet - TSOP-6

***et Europe: Trans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R

***Semiconductor: Complementary Power MOSFET 30V, 2.6A, 90mΩ

*** Source Electronics: MOSFET N/P-CH 30V 6-TSOP

***ark: COMP TSOP6 30V 2.9A 0.090

***Components: ON Semiconductor, NTGD4167CT1G

***ment14 APAC: Prices include import duty and tax. MOSFET, N AND P CH, 30V, 2.6A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:900mW; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN-P E N, 30V, 2.6A, TSOP-6; Polarità Transistor:Canale N e P; Corrente Continua di Drain Id:2.6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.052ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:900mV; Dissipazione di Potenza Pd:900mW; Modello Case Transistor:TSOP; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
NTGD4167CT1G DISTI # NTGD4167CT1GOSTR-ND	ON Semiconductor	MOSFET N/P-CH 30V 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1598
NTGD4167CT1G DISTI # NTGD4167CT1GOSCT-ND	ON Semiconductor	MOSFET N/P-CH 30V 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1805 500:$0.2336 100:$0.3185 10:$0.4250 1:$0.5000
NTGD4167CT1G DISTI # NTGD4167CT1GOSDKR-ND	ON Semiconductor	MOSFET N/P-CH 30V 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1805 500:$0.2336 100:$0.3185 10:$0.4250 1:$0.5000
NTGD4167CT1G DISTI # NTGD4167CT1G	ON Semiconductor	Trans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R (Alt: NTGD4167CT1G) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
NTGD4167CT1G DISTI # NTGD4167CT1G	ON Semiconductor	Trans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R - Tape and Reel (Alt: NTGD4167CT1G) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1109 6000:$0.1109 12000:$0.1089 18000:$0.1079 30000:$0.1049
NTGD4167CT1G DISTI # 81Y7039	ON Semiconductor	MOSFET, N AND P CH, 30V, 2.6A, TSOP-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):52mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:900mV,, RoHS Compliant: Yes	0	1:$0.4100 10:$0.3390 25:$0.2950 50:$0.2510 100:$0.2070 250:$0.1910 500:$0.1760 1000:$0.1600
NTGD4167CT1G DISTI # 95M6993	ON Semiconductor	DUAL N/P CHANNEL MOSFET, 30V, TSOP,Continuous Drain Current Id:2.6A,Continuous Drain Current Id, N Channel:2.6A,Continuous Drain Current Id, P Channel:-1.9A,Drain Source Voltage Vds:30V,Drain Source Voltage Vds, N Channel:30V , RoHS Compliant: Yes	0	1:$0.6090 50:$0.4030 100:$0.2250 250:$0.2190 500:$0.2120 1000:$0.1460 6000:$0.1360 18000:$0.1330
NTGD4167CT1G DISTI # 70341324	ON Semiconductor	NTGD4167CT1G N/P-channel MOSFET Transistor,2.2 A,2.9 A,30 V,6-Pin TSOP RoHS: Compliant	0	50:$0.3600 125:$0.3560 250:$0.3530 500:$0.3490
NTGD4167CT1G DISTI # 863-NTGD4167CT1G	ON Semiconductor	MOSFET COMP 30V 2.9A 0.090 TSOP6 RoHS: Compliant	0	1:$0.4100 10:$0.3390 100:$0.2070 1000:$0.1600 3000:$0.1360 9000:$0.1270
NTGD4167CT1G DISTI # 2533185	ON Semiconductor	MOSFET, N AND P CH, 30V, 2.6A, TSOP-6 RoHS: Compliant	0	5:£0.2940 25:£0.2810 100:£0.1590 250:£0.1410 500:£0.1220
NTGD4167CT1G DISTI # 2533185	ON Semiconductor	MOSFET, N AND P CH, 30V, 2.6A, TSOP-6 RoHS: Compliant	0	1:$0.6490 10:$0.5370 100:$0.3280 1000:$0.2540 3000:$0.2160 9000:$0.2010

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: NTGD4169FT1G OMO.#: OMO-NTGD4169FT1G	MOSFET FETKY 30V 2.6A 90MO TSOP6
	Mfr.#: NTGD4161PT1G OMO.#: OMO-NTGD4161PT1G	MOSFET PFET TSOP6 20V 2.3A 160mOhm
	Mfr.#: NTGD4167CT1G OMO.#: OMO-NTGD4167CT1G	MOSFET COMP 30V 2.9A 0.090 TSOP6
	Mfr.#: NTGD4161PT1G OMO.#: OMO-NTGD4161PT1G-ON-SEMICONDUCTOR	MOSFET 2P-CH 30V 1.5A 6-TSOP
	Mfr.#: NTGD4167C OMO.#: OMO-NTGD4167C-1190	नयाँ र मौलिक
	Mfr.#: NTGD4167CT1 OMO.#: OMO-NTGD4167CT1-1190	नयाँ र मौलिक
	Mfr.#: NTGD4167CT1G SI3590DV- OMO.#: OMO-NTGD4167CT1G-SI3590DV--1190	नयाँ र मौलिक
	Mfr.#: NTGD4167CTTGR OMO.#: OMO-NTGD4167CTTGR-1190	नयाँ र मौलिक
	Mfr.#: NTGD4167PT1G OMO.#: OMO-NTGD4167PT1G-1190	नयाँ र मौलिक
	Mfr.#: NTGD4167CT1G OMO.#: OMO-NTGD4167CT1G-ON-SEMICONDUCTOR	IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6

उपलब्धता

स्टक:: Available
अर्डर मा:: 3500
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मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.१५~~; ~~US$ ०.१५~~

10: ~~US$ ०.१४~~; ~~US$ १.४२~~

100: ~~US$ ०.१३~~; ~~US$ १३.४९~~

500: ~~US$ ०.१३~~; ~~US$ ६३.७०~~

1000: ~~US$ ०.१२~~; ~~US$ ११९.९०~~

बाट सुरु गर्नुहोस्

NTGD4167CT1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes