| PartNumber | IXFH12N100F | IXFH12N100P | IXFH12N100 |
| Description | MOSFET 12 Amps 1000V 1.05 Rds | MOSFET 12 Amps 1000V | MOSFET 1KV 12A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | 1 kV |
| Id Continuous Drain Current | 12 A | 12 A | 12 A |
| Rds On Drain Source Resistance | 1.05 Ohms | 1.05 Ohms | 1.05 Ohms |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 300 W | 463 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | 21.46 mm |
| Length | 16.26 mm | 16.26 mm | 16.26 mm |
| Series | HiPerRF | IXFH12N100P | IXFH12N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 12 ns | 36 ns | 32 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9.8 ns | 25 ns | 33 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 60 ns | 62 ns |
| Typical Turn On Delay Time | 12 ns | 30 ns | 21 ns |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
| Vgs th Gate Source Threshold Voltage | - | 3.5 V | - |
| Qg Gate Charge | - | 80 nC | - |
| Tradename | - | HiPerFET | HyperFET |
| Type | - | Polar HiPerFET Power MOSFET | - |
| Forward Transconductance Min | - | 4.8 S | 10 S |