 | |  | |
| PartNumber | IPB120N04S4-01 | IPB120N04S4-02 | IPB120N04S3-02 |
| Description | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | IGBT Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T |
| Manufacturer | Infineon | Infineon | INF |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 2 mOhms | 1.58 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 158 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPB120N04S401ATMA1 IPB12N4S41XT SP000705700 | IPB120N04S402ATMA1 IPB12N4S42XT SP000764726 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Qg Gate Charge | - | 134 nC | - |
| Fall Time | - | 30 ns | 18 ns |
| Rise Time | - | 16 ns | 19 ns |
| Typical Turn Off Delay Time | - | 30 ns | 57 ns |
| Typical Turn On Delay Time | - | 27 ns | 35 ns |
| Part Aliases | - | - | IPB120N04S302ATMA1 IPB120N04S302XT SP000261216 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 2 mOhms |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB120N04S402ATMA1 | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | |
| IPB120N04S4-01 | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | ||
| IPB120N04S4L02ATMA1 | MOSFET N-CHANNEL 30/40V | ||
| IPB120N04S4-02 | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | ||
| IPB120N04S404ATMA1 | MOSFET N-CHANNEL_30/40V | ||
| IPB120N04S401ATMA1 | MOSFET N-CH 40V 120A TO263-3-2 | ||
| IPB120N04S402ATMA1 | MOSFET N-CH 40V 120A TO263-3-2 | ||
| IPB120N04S404ATMA1 | MOSFET N-CH TO263-3 | ||
| IPB120N04S3-02 | IGBT Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T | ||
| IPB120N04S4L02ATMA1 | MOSFET N-CHANNEL 30/40V | ||
Infineon Technologies |
IPB120N04S401ATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPB120N04S402ATMA1-CUT TAPE | नयाँ र मौलिक | ||
| IPB120N04S3-02 3PN0402 | नयाँ र मौलिक | ||
| IPB120N04S3-02(3PN0402) | नयाँ र मौलिक | ||
| IPB120N04S302ATMA1 | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB120N04S302ATMA1) | ||
| IPB120N04S4-02(4N0402) | नयाँ र मौलिक | ||
| IPB120N04S4-02/4N0402 | नयाँ र मौलिक | ||
| IPB120N04S4-01 | RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | ||
| IPB120N04S4-02 | RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 |