IPB120N04S4-01

IPB120N04S4-01
Mfr. #:
IPB120N04S4-01
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB120N04S4-01 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB120N04S4-01 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS-T2
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPB120N04S401ATMA1 IPB12N4S41XT SP000705700
एकाइ वजन:
0.139332 oz
Tags
IPB120N04S4-0, IPB120N04S4, IPB120N04, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive COOLiRFET™ Power MOSFETs
Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These new devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density and reliability. With this performance, many applications using these new COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB120N04S401ATMA1
DISTI # V72:2272_06383031
Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 1:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$1.3028
IPB120N04S401ATMA1
DISTI # 26195102
Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 7:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N04S401ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.1759
  • 2000:$1.1339
  • 4000:$1.0929
  • 6000:$1.0559
  • 10000:$1.0369
IPB120N04S401ATMA1
DISTI # SP000705700
Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000705700)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.3249
  • 2000:€1.1039
  • 4000:€1.0189
  • 6000:€0.9469
  • 10000:€0.8829
IPB120N04S401ATMA1
DISTI # 34AC1654
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes263
  • 1:$3.0000
  • 10:$2.7100
  • 25:$2.5300
  • 50:$2.3500
  • 100:$2.1800
  • 250:$1.9300
  • 500:$1.6900
IPB120N04S401ATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
46451
  • 1000:$1.1000
  • 500:$1.1600
  • 100:$1.2100
  • 25:$1.2600
  • 1:$1.3600
IPB120N04S4-01
DISTI # 726-IPB120N04S4-01
Infineon Technologies AGMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant
2372
  • 1:$2.4100
  • 10:$2.0500
  • 100:$1.6400
  • 500:$1.4300
  • 1000:$1.1900
IPB120N04S401ATMA1
DISTI # 2781067
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant
263
  • 1:$2.4100
  • 10:$2.2500
  • 100:$1.9900
  • 250:$1.8800
  • 500:$1.7800
  • 1000:$1.7000
IPB120N04S401ATMA1
DISTI # 2781067
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant
331
  • 1:£2.4700
  • 10:£1.9800
  • 100:£1.6000
  • 250:£1.4200
  • 500:£1.2400
IPB120N04S401ATMA1
DISTI # C1S322000652291
Infineon Technologies AGMOSFETs
RoHS: Compliant
106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
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उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
IPB120N04S4-01 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.४०
US$ २.४०
10
US$ २.०४
US$ २०.४०
100
US$ १.६३
US$ १६३.००
500
US$ १.४३
US$ ७१५.००
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