IPB081N06L3

IPB081N06L3 G vs IPB081N06L3GATMA1

 
PartNumberIPB081N06L3 GIPB081N06L3GATMA1
DescriptionMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current50 A50 A
Rds On Drain Source Resistance6.7 mOhms6.7 mOhms
Vgs th Gate Source Threshold Voltage1.2 V1.2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge29 nC29 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation79 W79 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height4.4 mm4.4 mm
Length10 mm10 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min35 S35 S
Fall Time7 ns7 ns
Product TypeMOSFETMOSFET
Rise Time26 ns26 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time37 ns37 ns
Typical Turn On Delay Time15 ns15 ns
Part # AliasesIPB081N06L3GATMA1 IPB81N6L3GXT SP000398076G IPB081N06L3 IPB81N6L3GXT SP000398076
Unit Weight0.139332 oz0.139332 oz
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
IPB081N06L3 G MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3GATMA1 MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3 G MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3GATMA1 MOSFET N-CH 60V 50A TO263-3
IPB081N06L3 नयाँ र मौलिक
IPB081N06L3G Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076)
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