IPB081N06L3 G

IPB081N06L3 G
Mfr. #:
IPB081N06L3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB081N06L3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB081N06L3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
50 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.7 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
29 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
79 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
35 S
पतन समय:
7 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
26 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
37 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
भाग # उपनाम:
IPB081N06L3GATMA1 IPB81N6L3GXT SP000398076
एकाइ वजन:
0.139332 oz
Tags
IPB081N06L3G, IPB081, IPB08, IPB0, IPB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB081N06L3GATMA1
DISTI # V72:2272_06384674
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
990
  • 500:$0.8331
  • 250:$0.8476
  • 100:$0.9417
  • 25:$1.1252
  • 10:$1.2502
  • 1:$1.6010
IPB081N06L3GATMA1
DISTI # V36:1790_06384674
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.5248
  • 500000:$0.5252
  • 100000:$0.5803
  • 10000:$0.6904
  • 1000:$0.7095
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 10000:$0.6055
  • 5000:$0.6291
  • 2000:$0.6622
  • 1000:$0.7095
IPB081N06L3 G
DISTI # 32730981
Infineon Technologies AG01000
  • 13:$1.9500
IPB081N06L3GATMA1
DISTI # 31919767
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
990
  • 12:$1.6010
IPB081N06L3G
DISTI # SP000398076
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 36200
  • 10000:€0.5249
  • 6000:€0.5649
  • 4000:€0.6119
  • 2000:€0.6679
  • 1000:€0.8159
IPB081N06L3GXT
DISTI # IPB081N06L3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB081N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.5719
  • 6000:$0.5819
  • 4000:$0.6029
  • 2000:$0.6249
  • 1000:$0.6489
IPB081N06L3GATMA1
DISTI # 60R2670
Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes681
  • 500:$0.8650
  • 100:$0.9790
  • 10:$1.2700
  • 1:$1.4800
IPB081N06L3 G
DISTI # 726-IPB081N06L3G
Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
3004
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 726-IPB081N06L3GATMA
Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
2030
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 8269525P
Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL975
  • 1000:£0.4720
  • 500:£0.5830
  • 250:£0.6220
  • 100:£0.6600
IPB081N06L3G
DISTI # IPB081N06L3G
Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,79W,PG-TO263-3890
  • 500:$0.6800
  • 100:$0.7300
  • 10:$0.8100
  • 3:$0.9900
  • 1:$1.0700
IPB081N06L3GATMA1
DISTI # XSKDRABV0051843
Infineon Technologies AG 
RoHS: Compliant
2200 in Stock0 on Order
  • 2200:$0.7747
  • 1000:$0.8300
IPB081N06L3GATMA1
DISTI # 1775548
Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31791
  • 500:£0.6670
  • 250:£0.7110
  • 100:£0.7540
  • 10:£1.0300
  • 1:£1.3100
IPB081N06L3GATMA1
DISTI # 1775548
Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-3
RoHS: Compliant
681
  • 2000:$0.9040
  • 1000:$1.0200
  • 500:$1.2900
  • 100:$1.4600
  • 10:$1.9000
  • 1:$2.2200
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उपलब्धता
स्टक:
Available
अर्डर मा:
1986
मात्रा प्रविष्ट गर्नुहोस्:
IPB081N06L3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.४७
US$ १.४७
10
US$ १.२६
US$ १२.६०
100
US$ ०.९७
US$ ९६.९०
500
US$ ०.८६
US$ ४२८.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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