 | | |
| PartNumber | IPB020N04N G | IPB020N04NGATMA1 |
| Description | MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 140 A | - |
| Rds On Drain Source Resistance | 2 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 167 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 7.8 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6.4 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | - |
| Typical Turn On Delay Time | 27 ns | - |
| Part # Aliases | IPB020N04NGATMA1 IPB2N4NGXT SP000359157 | G IPB020N04N IPB2N4NGXT SP000359157 |
| Unit Weight | 0.056438 oz | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB020N04N G | MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | |
| IPB020N04NGATMA1 | MOSFET N-CH 40V 140A TO263-7 | ||
| IPB020N04N G | Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | ||
Infineon Technologies |
IPB020N04NGATMA1 | MOSFET MV POWER MOS | |
| IPB020N04N | नयाँ र मौलिक | ||
| IPB020N04N3G | नयाँ र मौलिक | ||
| IPB020N04NG | नयाँ र मौलिक |