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STGW8M120DF3

STGW8M120DF3
Mfr. #:
STGW8M120DF3
निर्माता:
STMicroelectronics
विवरण:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STGW8M120DF3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STGW8M120DF3 थप जानकारी STGW8M120DF3 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
1200 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.85 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
16 A
Pd - शक्ति अपव्यय:
167 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
STGW8M120DF3
प्याकेजिङ:
ट्यूब
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
गेट-एमिटर चुहावट वर्तमान:
250 uA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
600
उपश्रेणी:
IGBTs
एकाइ वजन:
0.211644 oz
Tags
STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1200V, 16A, TO-247-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
भाग # Mfg। विवरण स्टक मूल्य
STGW8M120DF3
DISTI # V99:2348_18695401		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 1:$3.6047
STGW8M120DF3
DISTI # 497-17619-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2520:$1.7500
  • 510:$2.1787
  • 120:$2.5594
  • 30:$2.9530
  • 10:$3.1240
  • 1:$3.4800
STGW8M120DF3
DISTI # 33130727		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 4:$3.6047
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 - Trays (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 1800:$1.4900
  • 3000:$1.4900
  • 6000:$1.4900
  • 600:$1.5900
  • 1200:$1.5900
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 30		Europe - 0
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 60:€1.6900
  • 30:€1.7900
STGW8M120DF3
DISTI # 38AC2424		STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes0
  • 500:$2.0900
  • 250:$2.3300
  • 100:$2.4500
  • 50:$2.5800
  • 25:$2.7100
  • 10:$2.8400
  • 1:$3.3300
STGW8M120DF3
DISTI # 511-STGW8M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
RoHS: Compliant		600
  • 1:$3.3000
  • 10:$2.8100
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
STGW8M120DF3
DISTI # IGBT2611		STMicroelectronicsIGBT 1200V8A 1,85VTO-247Stock DE - 0Stock HK - 0Stock US - 0
  • 600:$1.8600
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-3
RoHS: Compliant		0
  • 2520:$2.8000
  • 1020:$2.9400
  • 510:$3.4900
  • 120:$4.3100
  • 30:$4.7300
  • 1:$5.8800
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-30
  • 500:£1.5200
  • 250:£1.6900
  • 100:£1.7800
  • 10:£2.0500
  • 1:£2.7300
छवि भाग # विवरण
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3

 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3-STMICROELECTRONICS

 TRENCH GATE FIELD-STOP IGBT M SE
उपलब्धता
स्टक:
598
अर्डर मा:
2581
मात्रा प्रविष्ट गर्नुहोस्:
STGW8M120DF3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.३०
US$ ३.३०
10
US$ २.८१
US$ २८.१०
100
US$ २.४३
US$ २४३.००
250
US$ २.३१
US$ ५७७.५०
500
US$ २.०७
US$ १ ०३५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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