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FDP3632

FDP3632
Mfr. #:
FDP3632
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 100V 80a .9 Ohms/VGS=1V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FDP3632 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
7.5 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
310 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
16.3 mm
लम्बाइ:
10.67 mm
शृङ्खला:
FDP3632
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
MOSFET
चौडाइ:
4.7 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
पतन समय:
46 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
39 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
96 ns
सामान्य टर्न-अन ढिलाइ समय:
30 ns
भाग # उपनाम:
FDP3632_NL
एकाइ वजन:
0.063493 oz
Tags
FDP363, FDP36, FDP3, FDP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10
***p One Stop Japan
Trans MOSFET N-CH 100V 12A Automotive 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 100V 12A 3-Pin (3+Tab) TO-220AB Tube
***et Europe
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB
***et
TO-220AB, SINGLE, N-CH, 100V, 9 MOHM PWR ULTRAFET TRENCH MOS
*** Source Electronics
MOSFET N-CH 100V 80A TO-220AB
***ark
Fet 100V 9.0 Mohm To220 Rohs Compliant: Yes
***ser
MOSFETs 100V, 80a .9 Ohms/VGS=1V
***Components
MOSFET Transistor
***ment14 APAC
N CH MOSFET, 100V, 80A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:820A; SMD Marking:FDP3632; Voltage Vgs Max:4V
भाग # Mfg। विवरण स्टक मूल्य
FDP3632
DISTI # FDP3632-ND		ON SemiconductorMOSFET N-CH 100V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2208In Stock
  • 1600:$1.7245
  • 800:$1.8409
  • 100:$2.4810
  • 10:$3.0050
  • 1:$3.3600
FDP3632
DISTI # FDP3632		ON SemiconductorTrans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP3632)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1400
  • 1:$1.1900
  • 10:$1.0900
  • 25:$1.0900
  • 50:$1.0900
  • 100:$1.0900
  • 500:$1.0900
  • 1000:$1.0900
FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		9511
  • 1000:$1.3800
  • 500:$1.4500
  • 100:$1.5100
  • 25:$1.5800
  • 1:$1.7000
FDP3632
DISTI # 512-FDP3632		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Compliant		1048
  • 1:$2.8100
  • 10:$2.3900
  • 100:$2.0700
  • 250:$1.9600
  • 500:$1.7600
FDP3632_Q
DISTI # 512-FDP3632_Q		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Not compliant		0
    FDP3632Fairchild Semiconductor Corporation 22
      FDP3632
      DISTI # 6714828P      		ON SemiconductorMOSFET N-CHANNEL 100V 12A TO220AB, TU12
      • 10:£2.1500
      • 20:£1.9400
      FDP3632
      DISTI # FDP3632      		ON SemiconductorTransistor: N-MOSFET,unipolar,100V,12A,310W,TO220AB68
      • 1:$3.9800
      • 3:$3.4100
      • 10:$2.7400
      • 25:$2.4700
      FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Not Compliant      		Europe - 100
        FDP3632
        DISTI # 1095015        		ON Semiconductor 
        RoHS: Compliant        		0
        • 500:$2.7900
        • 250:$3.1000
        • 100:$3.2800
        • 10:$3.7800
        • 1:$4.4500
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        मात्रा प्रविष्ट गर्नुहोस्:
        FDP3632 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
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        विस्तार मूल्य
        1
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        100
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        250
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        500
        US$ १.८३
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        1000
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