SIR186DP-T1-RE3

SIR186DP-T1-RE3
Mfr. #:
SIR186DP-T1-RE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR186DP-T1-RE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR186DP-T1-RE3 DatasheetSIR186DP-T1-RE3 Datasheet (P4-P6)SIR186DP-T1-RE3 Datasheet (P7-P9)SIR186DP-T1-RE3 Datasheet (P10-P12)SIR186DP-T1-RE3 Datasheet (P13)
ECAD Model:
थप जानकारी:
SIR186DP-T1-RE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
3.7 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.6 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
24.5 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
57 W
कन्फिगरेसन:
एकल
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIR
ब्रान्ड:
Vishay / Siliconix
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
22 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
14 ns
सामान्य टर्न-अन ढिलाइ समय:
10 ns
Tags
SIR18, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 60V 23A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 60V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 60V, 0.06A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 0.06A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 60V, 0,06A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0037ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.6V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
भाग # Mfg। विवरण स्टक मूल्य
SIR186DP-T1-RE3
DISTI # V99:2348_22521044
Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
  • 3000000:$0.5343
  • 600000:$0.5350
  • 60000:$0.5357
  • 6000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3TR-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 15000:$0.4899
  • 6000:$0.5090
  • 3000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3CT-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3DKR-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1000:€0.4869
  • 500:€0.4929
  • 100:€0.5019
  • 50:€0.5089
  • 25:€0.5759
  • 10:€0.7099
  • 1:€0.9899
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4669
  • 30000:$0.4799
  • 18000:$0.4929
  • 12000:$0.5139
  • 6000:$0.5299
SIR186DP-T1-RE3
DISTI # 37AC0918
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes0
  • 500:$0.7000
  • 250:$0.7570
  • 100:$0.8140
  • 50:$0.8960
  • 25:$0.9780
  • 10:$1.0600
  • 1:$1.2900
SIR186DP-T1-RE3
DISTI # 59AC7438
Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 10000:$0.4630
  • 6000:$0.4740
  • 4000:$0.4920
  • 2000:$0.5470
  • 1000:$0.6020
  • 1:$0.6270
SIR186DP-T1-RE3
DISTI # 78-SIR186DP-T1-RE3
Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
0
  • 1:$1.2700
  • 10:$1.0400
  • 100:$0.8050
  • 500:$0.6920
  • 1000:$0.5460
  • 3000:$0.5100
SIR186DP-T1-RE3
DISTI # 2785448
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO
RoHS: Compliant
0
  • 5000:$0.7840
  • 1000:$0.8120
  • 500:$0.8580
  • 250:$1.0100
  • 100:$1.2300
  • 25:$1.5700
  • 5:$1.8900
SIR186DP-T1-RE3
DISTI # 2785448
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO0
  • 500:£0.5340
  • 250:£0.5780
  • 100:£0.6210
  • 10:£0.8660
  • 1:£1.1200
छवि भाग # विवरण
INA138NA/250

Mfr.#: INA138NA/250

OMO.#: OMO-INA138NA-250

Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
LTC4359IMS8#PBF

Mfr.#: LTC4359IMS8#PBF

OMO.#: OMO-LTC4359IMS8-PBF

Power Management Specialized - PMIC Ideal Diode Cntr w/ Reverse In Prot
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6

TVS Diodes / ESD Suppressors ESD Protection Low Cap
BAT54XV2T1G

Mfr.#: BAT54XV2T1G

OMO.#: OMO-BAT54XV2T1G

Schottky Diodes & Rectifiers 30V 200mW Single
BAT54HT1G

Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G

Schottky Diodes & Rectifiers 30V 200mW Single
INA138NA/250

Mfr.#: INA138NA/250

OMO.#: OMO-INA138NA-250-TEXAS-INSTRUMENTS

Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
0603YC105KAT2A

Mfr.#: 0603YC105KAT2A

OMO.#: OMO-0603YC105KAT2A-AVX

Multilayer Ceramic Capacitors MLCC - Cap Ceramic 1uF 16V X7R 10% SMD 0603 125°C Paper T/R
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6-STMICROELECTRONICS

TVS DIODE 5.25V 17V SOT23-6
C1608X5R1A106K080AC

Mfr.#: C1608X5R1A106K080AC

OMO.#: OMO-C1608X5R1A106K080AC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 10% 10Volts
BAT54HT1G

Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G-ON-SEMICONDUCTOR

Schottky Diodes & Rectifiers 30V 200mW Single
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
SIR186DP-T1-RE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.२७
US$ १.२७
10
US$ १.०४
US$ १०.४०
100
US$ ०.८०
US$ ८०.५०
500
US$ ०.६९
US$ ३४६.००
1000
US$ ०.५५
US$ ५४६.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • SIRA20DP TrenchFET® Gen IV MOSFET
    Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
  • P-Channel MOSFETs
    Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
  • SiP32452, SiP32453 Load Switch
    Vishay's load switches have a low input logic control threshold and a fast turn on time.
  • Compare SIR186DP-T1-RE3
    SiR180DPT1RE3 vs SIR182DP vs SIR182DPT1RE3
  • PowerPAIR®
    Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
Top