SISS64DN-T1-GE3

SISS64DN-T1-GE3
Mfr. #:
SISS64DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SISS64DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISS64DN-T1-GE3 DatasheetSISS64DN-T1-GE3 Datasheet (P4-P6)SISS64DN-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
40 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, - 16 V
Qg - गेट चार्ज:
68 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
57 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIS
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
70 S
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
15 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
Tags
SISS6, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID 8-Pin PowerPAK 1212 T/R
***ical
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212-S T/R
***i-Key
MOSFET N-CHANNEL 30V 40A 1212-8S
***ark
Mosfet, N-Ch, 30V, 40A, 150Deg C, 57W; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 40A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 30V, 40A, 150°C, 57W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
भाग # Mfg। विवरण स्टक मूल्य
SISS64DN-T1-GE3
DISTI # V72:2272_21388895
Vishay IntertechnologiesSISS64DN-T1-GE35972
  • 75000:$0.5084
  • 30000:$0.5094
  • 15000:$0.5106
  • 6000:$0.5117
  • 3000:$0.5128
  • 1000:$0.6029
  • 500:$0.7094
  • 250:$0.8491
  • 100:$0.8581
  • 50:$0.9082
  • 25:$1.0092
  • 10:$1.1213
  • 1:$1.3363
SISS64DN-T1-GE3
DISTI # V99:2348_21388895
Vishay IntertechnologiesSISS64DN-T1-GE30
  • 6000:$0.5838
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHANNEL 30V 40A 1212-8S
Min Qty: 1
Container: Cut Tape (CT)
11784In Stock
  • 1000:$0.6154
  • 500:$0.7795
  • 100:$0.9436
  • 10:$1.2100
  • 1:$1.3500
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHANNEL 30V 40A 1212-8S
Min Qty: 1
Container: Digi-Reel®
11784In Stock
  • 1000:$0.6154
  • 500:$0.7795
  • 100:$0.9436
  • 10:$1.2100
  • 1:$1.3500
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHANNEL 30V 40A 1212-8S
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 6000:$0.5297
  • 3000:$0.5576
SISS64DN-T1-GE3
DISTI # 32410161
Vishay IntertechnologiesSISS64DN-T1-GE35972
  • 15000:$0.5106
  • 6000:$0.5117
  • 3000:$0.5128
  • 1000:$0.6029
  • 500:$0.7094
  • 250:$0.8491
  • 100:$0.8581
  • 50:$0.9082
  • 25:$1.0092
  • 12:$1.1213
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID8-Pin PowerPAK 1212 T/R (Alt: SISS64DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    SISS64DN-T1-GE3
    DISTI # SISS64DN-T1-GE3
    Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS64DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 60000:$0.5106
    • 30000:$0.5248
    • 18000:$0.5397
    • 12000:$0.5626
    • 6000:$0.5798
    SISS64DN-T1-GE3
    DISTI # 59AC7457
    Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET
    RoHS: Not Compliant
    0
    • 10000:$0.5060
    • 6000:$0.5180
    • 4000:$0.5380
    • 2000:$0.5980
    • 1000:$0.6580
    • 1:$0.6850
    SISS64DN-T1-GE3
    DISTI # 81AC2797
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes
    RoHS: Compliant
    6050
    • 2500:$0.5250
    • 1000:$0.5710
    • 500:$0.6620
    • 100:$0.7570
    • 50:$0.8560
    • 25:$0.9440
    • 10:$1.0300
    • 1:$1.3400
    SISS64DN-T1-GE3
    DISTI # 78-SISS64DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
    RoHS: Compliant
    3440
    • 1:$1.3500
    • 10:$1.1300
    • 100:$0.8980
    • 500:$0.7570
    • 1000:$0.6040
    • 3000:$0.5570
    • 6000:$0.5290
    SISS64DN-T1-GE3
    DISTI # 2932962
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W
    RoHS: Compliant
    6050
    • 3000:$0.8390
    • 1000:$0.8560
    • 500:$1.0900
    • 100:$1.2700
    • 10:$1.6400
    • 1:$1.9900
    SISS64DN-T1-GE3
    DISTI # 2932962RL
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W
    RoHS: Compliant
    0
    • 5000:£0.4450
    • 1000:£0.4630
    • 500:£0.5870
    • 250:£0.6360
    • 100:£0.6830
    • 10:£0.9410
    • 1:£1.2300
    SISS64DN-T1-GE3
    DISTI # 2932962
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W
    RoHS: Compliant
    6050
    • 5000:£0.4450
    • 1000:£0.4630
    • 500:£0.5870
    • 250:£0.6360
    • 100:£0.6830
    • 10:£0.9410
    • 1:£1.2300
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    स्टक:
    Available
    अर्डर मा:
    1986
    मात्रा प्रविष्ट गर्नुहोस्:
    SISS64DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.३९
    US$ १.३९
    10
    US$ १.१४
    US$ ११.४०
    100
    US$ ०.८८
    US$ ८८.१०
    500
    US$ ०.७६
    US$ ३७८.५०
    1000
    US$ ०.६०
    US$ ५९८.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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