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SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3
Mfr. #:
SIA533EDJ-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET -12V Vds 8V Vgs PowerPAK SC-70
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIA533EDJ-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA533EDJ-T1-GE3 DatasheetSIA533EDJ-T1-GE3 Datasheet (P4-P6)SIA533EDJ-T1-GE3 Datasheet (P7-P9)SIA533EDJ-T1-GE3 Datasheet (P10-P12)SIA533EDJ-T1-GE3 Datasheet (P13-P14)
ECAD Model:
थप जानकारी:
SIA533EDJ-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SC70-6
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
एन-च्यानल, पी-च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
12 V
आईडी - निरन्तर ड्रेन वर्तमान:
4.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
34 mOhms, 59 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
400 mV
Vgs - गेट-स्रोत भोल्टेज:
8 V
Qg - गेट चार्ज:
10 nC, 13 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
7.8 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
उचाइ:
0.75 mm
लम्बाइ:
2.05 mm
शृङ्खला:
SIA
ट्रान्जिस्टर प्रकार:
1 N-Channel, 1 P-Channel
चौडाइ:
2.05 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
21 S, 11 S
पतन समय:
10 ns, 10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns, 15 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
20 ns, 25 ns
सामान्य टर्न-अन ढिलाइ समय:
10 ns, 15 ns
भाग # उपनाम:
SIA533EDJ-GE3
एकाइ वजन:
0.000988 oz
Tags
SIA53, SIA5, SIA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.5 A; 12 V; 6-Pin SC-70
***ure Electronics
SiA533EDJ Series Dual N & P Channel 12 V 34 mOhm 7.8 W Mosfet - PowerPAK SC-70-6
***et Europe
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R
***C
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70
***Components
Trans MOSFET N/P-CH 12V 4.5A
***i-Key
MOSFET N/P-CH 12V 4.5A SC70-6
***
N- AND P-CHANNEL 12-V (D-S)
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.028Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:7.8W Rohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
भाग # Mfg। विवरण स्टक मूल्य
SIA533EDJ-T1-GE3
DISTI # V72:2272_09216848		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 25:$0.3797
  • 10:$0.3814
  • 1:$0.4597
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		90000In Stock
  • 3000:$0.2302
SIA533EDJ-T1-GE3
DISTI # 30208455		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 34:$0.3797
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4679
  • 6000:€0.3189
  • 12000:€0.2749
  • 18000:€0.2539
  • 30000:€0.2359
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA533EDJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1959
  • 6000:$0.1899
  • 12000:$0.1819
  • 18000:$0.1769
  • 30000:$0.1729
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA533EDJ-T1-GE3
    DISTI # 04X9740    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
    • 1:$0.7600
    • 10:$0.6400
    • 25:$0.5860
    • 50:$0.5330
    • 100:$0.4790
    • 500:$0.3510
    • 1000:$0.2710
    SIA533EDJ-T1-GE3
    DISTI # 86R3786    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3.
    DISTI # 15AC4247    		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:7.8W , RoHS Compliant: No0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3
    DISTI # 70616551    		Vishay SiliconixSIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor,4.5 A,12 V,6-Pin SC-70
    RoHS: Compliant    		0
    • 300:$0.4300
    • 600:$0.3800
    • 1500:$0.3400
    • 3000:$0.3000
    SIA533EDJ-T1-GE3
    DISTI # 781-SIA533EDJ-T1-GE3    		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		9531
    • 1:$0.6400
    • 10:$0.4880
    • 100:$0.3620
    • 500:$0.2980
    • 1000:$0.2300
    • 3000:$0.2100
    • 6000:$0.1960
    • 9000:$0.1830
    SIA533EDJ-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		Americas - 3000
      SIA533EDJ-T1-GE3
      DISTI # C1S803601730507      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2640
      • 250:$0.3042
      • 100:$0.3051
      • 25:$0.3797
      • 10:$0.3814
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      उपलब्धता
      स्टक:
      26
      अर्डर मा:
      2009
      मात्रा प्रविष्ट गर्नुहोस्:
      SIA533EDJ-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.६३
      US$ ०.६३
      10
      US$ ०.४९
      US$ ४.८७
      100
      US$ ०.३६
      US$ ३६.१०
      500
      US$ ०.३०
      US$ १४८.५०
      1000
      US$ ०.२३
      US$ २२९.००
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