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IPD80P03P4L07ATMA1

IPD80P03P4L07ATMA1
Mfr. #:
IPD80P03P4L07ATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET P-CH 30V 80A TO252-3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPD80P03P4L07ATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
IPD80, IPD8, IPD
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, P-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK Infineon IPD80P03P4L07ATMA1
***p One Stop Japan
Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET P-CH 30V 80A 3-Pin TO-252 T/R
***i-Key
MOSFET P-CH 30V 80A TO252-3
***ronik
P-CH 30V 80A 6.8mOhm TO252-3
***ark
Mosfet, Aec-Q101, P-Ch, -30V, To-252; Transistor Polarity:p Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0056Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, P-CH, -30V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:88W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS-P2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-P, -30V, TO-252; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-80A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0056ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.5V; Dissipazione di Potenza Pd:88W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS-P2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: P-channel - Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested; Intended for reverse battery protection | Benefits: No charge pump required for high side drive.; Simple interface drive circuit; World's lowest RDSon at 30V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 30V P-Channel as high side device with no need of charge pump
भाग # Mfg। विवरण स्टक मूल्य
IPD80P03P4L07ATMA1
DISTI # V72:2272_06384455		Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 75000:$0.5329
  • 30000:$0.5431
  • 15000:$0.5534
  • 6000:$0.5636
  • 3000:$0.5739
  • 1000:$0.5840
  • 500:$0.7330
  • 250:$0.7689
  • 100:$0.8578
  • 50:$0.9959
  • 25:$1.1143
  • 10:$1.1211
  • 1:$1.4374
IPD80P03P4L07ATMA1
DISTI # IPD80P03P4L07ATMA1CT-ND		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2506In Stock
  • 1000:$0.6500
  • 500:$0.8234
  • 100:$0.9967
  • 10:$1.2780
  • 1:$1.4300
IPD80P03P4L07ATMA1
DISTI # IPD80P03P4L07ATMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2506In Stock
  • 1000:$0.6500
  • 500:$0.8234
  • 100:$0.9967
  • 10:$1.2780
  • 1:$1.4300
IPD80P03P4L07ATMA1
DISTI # IPD80P03P4L07ATMA1TR-ND		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.5385
  • 5000:$0.5596
  • 2500:$0.5890
IPD80P03P4L07ATMA1
DISTI # 32898824		Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 13:$1.4374
IPD80P03P4L07ATMA1
DISTI # 20247069		Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2260
  • 2260:$0.5518
IPD80P03P4L07ATMA1
DISTI # SP000396296		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3 (Alt: SP000396296)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.5759
  • 15000:€0.6149
  • 10000:€0.6759
  • 5000:€0.7559
  • 2500:€0.9689
IPD80P03P4L07XT
DISTI # IPD80P03P4L07ATMA1		Infineon Technologies AGTrans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD80P03P4L07ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5499
  • 15000:$0.5599
  • 10000:$0.5799
  • 5000:$0.6019
  • 2500:$0.6239
IPD80P03P4L07ATMA1
DISTI # 12AC9715		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes7941
  • 1000:$0.6080
  • 500:$0.7700
  • 250:$0.8200
  • 100:$0.8710
  • 50:$0.9570
  • 25:$1.0400
  • 10:$1.1300
  • 1:$1.3200
IPD80P03P4L-07
DISTI # 726-IPD80P03P4L07		Infineon Technologies AGMOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
RoHS: Compliant		19869
  • 1:$1.3100
  • 10:$1.1200
  • 100:$0.8620
  • 500:$0.7620
  • 1000:$0.6020
  • 2500:$0.5330
  • 10000:$0.5130
IPD80P03P4L07ATMA1
DISTI # 726-IPD80P03P4L07ATM		Infineon Technologies AGMOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
RoHS: Compliant		4584
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9320
  • 500:$0.8230
  • 1000:$0.6500
  • 2500:$0.5600
  • 10000:$0.5550
IPD80P03P4L07ATMA1
DISTI # 1107433P		Infineon Technologies AGMOSFET P-CHAN OPTIMOS-P2 30V 80A TO252, RL1880
  • 1000:£0.4180
  • 400:£0.4910
  • 100:£0.5780
IPD80P03P4L07ATMA1
DISTI # 2709981		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-252
RoHS: Compliant		7856
  • 100:$1.5100
  • 10:$1.9300
  • 1:$2.1600
IPD80P03P4L07ATMA1
DISTI # 2709981		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-2528052
  • 500:£0.5930
  • 250:£0.6320
  • 100:£0.6710
  • 10:£0.9280
  • 1:£1.1600
छवि भाग # विवरण
IPD80P03P4L-07

Mfr.#: IPD80P03P4L-07

OMO.#: OMO-IPD80P03P4L-07

 MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
IPD80P03P4L07ATMA1

Mfr.#: IPD80P03P4L07ATMA1

OMO.#: OMO-IPD80P03P4L07ATMA1

 MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
IPD80P03P4L-07

Mfr.#: IPD80P03P4L-07

OMO.#: OMO-IPD80P03P4L-07-1190

 MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
IPD80P03P4L07ATMA1

Mfr.#: IPD80P03P4L07ATMA1

OMO.#: OMO-IPD80P03P4L07ATMA1-INFINEON-TECHNOLOGIES

 MOSFET P-CH 30V 80A TO252-3
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
IPD80P03P4L07ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
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10
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100
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500
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