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IPD80P03P4L07ATMA1

IPD80P03P4L07ATMA1
Mfr. #:
IPD80P03P4L07ATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPD80P03P4L07ATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD80P03P4L07ATMA1 DatasheetIPD80P03P4L07ATMA1 Datasheet (P4-P6)IPD80P03P4L07ATMA1 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
5.6 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
5 V, - 16 V
Qg - गेट चार्ज:
80 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
88 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
2.3 mm
लम्बाइ:
6.5 mm
शृङ्खला:
XPD80P03
ट्रान्जिस्टर प्रकार:
1 P-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
60 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
4 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
15 ns
सामान्य टर्न-अन ढिलाइ समय:
8 ns
भाग # उपनाम:
IPD80P03P4L-07 IPD8P3P4L7XT SP000396296
एकाइ वजन:
0.139332 oz
Tags
IPD80, IPD8, IPD
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, P-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK Infineon IPD80P03P4L07ATMA1
***p One Stop Japan
Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET P-CH 30V 80A 3-Pin TO-252 T/R
***i-Key
MOSFET P-CH 30V 80A TO252-3
***ronik
P-CH 30V 80A 6.8mOhm TO252-3
***ark
Mosfet, Aec-Q101, P-Ch, -30V, To-252; Transistor Polarity:p Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0056Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, P-CH, -30V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:88W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS-P2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-P, -30V, TO-252; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-80A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0056ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.5V; Dissipazione di Potenza Pd:88W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS-P2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: P-channel - Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested; Intended for reverse battery protection | Benefits: No charge pump required for high side drive.; Simple interface drive circuit; World's lowest RDSon at 30V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 30V P-Channel as high side device with no need of charge pump
भाग # Mfg। विवरण स्टक मूल्य
IPD80P03P4L07ATMA1
DISTI # V72:2272_06384455		Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 75000:$0.5329
  • 30000:$0.5431
  • 15000:$0.5534
  • 6000:$0.5636
  • 3000:$0.5739
  • 1000:$0.5840
  • 500:$0.7330
  • 250:$0.7689
  • 100:$0.8578
  • 50:$0.9959
  • 25:$1.1143
  • 10:$1.1211
  • 1:$1.4374
IPD80P03P4L07ATMA1
DISTI # IPD80P03P4L07ATMA1CT-ND		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2506In Stock
  • 1000:$0.6500
  • 500:$0.8234
  • 100:$0.9967
  • 10:$1.2780
  • 1:$1.4300
IPD80P03P4L07ATMA1
DISTI # IPD80P03P4L07ATMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2506In Stock
  • 1000:$0.6500
  • 500:$0.8234
  • 100:$0.9967
  • 10:$1.2780
  • 1:$1.4300
IPD80P03P4L07ATMA1
DISTI # IPD80P03P4L07ATMA1TR-ND		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.5385
  • 5000:$0.5596
  • 2500:$0.5890
IPD80P03P4L07ATMA1
DISTI # 32898824		Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 13:$1.4374
IPD80P03P4L07ATMA1
DISTI # 20247069		Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2260
  • 2260:$0.5518
IPD80P03P4L07ATMA1
DISTI # SP000396296		Infineon Technologies AGMOSFET P-CH 30V 80A TO252-3 (Alt: SP000396296)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.5759
  • 15000:€0.6149
  • 10000:€0.6759
  • 5000:€0.7559
  • 2500:€0.9689
IPD80P03P4L07XT
DISTI # IPD80P03P4L07ATMA1		Infineon Technologies AGTrans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD80P03P4L07ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5499
  • 15000:$0.5599
  • 10000:$0.5799
  • 5000:$0.6019
  • 2500:$0.6239
IPD80P03P4L07ATMA1
DISTI # 12AC9715		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes7941
  • 1000:$0.6080
  • 500:$0.7700
  • 250:$0.8200
  • 100:$0.8710
  • 50:$0.9570
  • 25:$1.0400
  • 10:$1.1300
  • 1:$1.3200
IPD80P03P4L-07
DISTI # 726-IPD80P03P4L07		Infineon Technologies AGMOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
RoHS: Compliant		19869
  • 1:$1.3100
  • 10:$1.1200
  • 100:$0.8620
  • 500:$0.7620
  • 1000:$0.6020
  • 2500:$0.5330
  • 10000:$0.5130
IPD80P03P4L07ATMA1
DISTI # 726-IPD80P03P4L07ATM		Infineon Technologies AGMOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
RoHS: Compliant		4584
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9320
  • 500:$0.8230
  • 1000:$0.6500
  • 2500:$0.5600
  • 10000:$0.5550
IPD80P03P4L07ATMA1
DISTI # 1107433P		Infineon Technologies AGMOSFET P-CHAN OPTIMOS-P2 30V 80A TO252, RL1880
  • 1000:£0.4180
  • 400:£0.4910
  • 100:£0.5780
IPD80P03P4L07ATMA1
DISTI # 2709981		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-252
RoHS: Compliant		7856
  • 100:$1.5100
  • 10:$1.9300
  • 1:$2.1600
IPD80P03P4L07ATMA1
DISTI # 2709981		Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-2528052
  • 500:£0.5930
  • 250:£0.6320
  • 100:£0.6710
  • 10:£0.9280
  • 1:£1.1600
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उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
IPD80P03P4L07ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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