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BSC120N03LSGATMA1

BSC120N03LSGATMA1
Mfr. #:
BSC120N03LSGATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC120N03LSGATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
39 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
10 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
15 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
28 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
25 S
पतन समय:
2.2 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
2.2 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
12 ns
सामान्य टर्न-अन ढिलाइ समय:
2.7 ns
भाग # उपनाम:
BSC120N03LS BSC12N3LSGXT G SP000302848
एकाइ वजन:
0.008536 oz
Tags
BSC120N03LSGA, BSC120N03LSG, BSC120N03L, BSC120N, BSC120, BSC12, BSC1, BSC
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 12 mOhm OptiMOS™3 Power-Mosfet - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 39A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:39A; Power Dissipation Pd:28W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
भाग # Mfg। विवरण स्टक मूल्य
BSC120N03LSGATMA1
DISTI # V72:2272_06391050		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		8784
  • 6000:$0.1550
  • 3000:$0.1711
  • 1000:$0.1901
  • 500:$0.2112
  • 250:$0.2347
  • 100:$0.2607
  • 25:$0.3664
  • 10:$0.3713
  • 1:$0.4296
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7929In Stock
  • 1000:$0.2754
  • 500:$0.3442
  • 100:$0.4647
  • 10:$0.6020
  • 1:$0.6900
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7929In Stock
  • 1000:$0.2754
  • 500:$0.3442
  • 100:$0.4647
  • 10:$0.6020
  • 1:$0.6900
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 39A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.2256
BSC120N03LSGATMA1
DISTI # 26195735		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		8784
  • 6000:$0.1587
  • 3000:$0.1711
  • 1000:$0.1901
  • 500:$0.2112
  • 250:$0.2347
  • 100:$0.2607
  • 38:$0.3664
BSC120N03LSGXT
DISTI # BSC120N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP - Tape and Reel (Alt: BSC120N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.1749
  • 10000:$0.1679
  • 20000:$0.1619
  • 30000:$0.1569
  • 50000:$0.1539
BSC120N03LSGATMA1
DISTI # 60R2513		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 39A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes176
  • 1:$0.7040
  • 10:$0.5800
  • 100:$0.3530
  • 500:$0.3140
  • 1000:$0.2730
BSC120N03LSGATMA1
DISTI # 726-BSC120N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
RoHS: Compliant		4139
  • 1:$0.5700
  • 10:$0.4710
  • 100:$0.3040
  • 1000:$0.2440
BSC120N03LS G
DISTI # 726-BSC120N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
RoHS: Compliant		5442
  • 1:$0.6400
  • 10:$0.5270
  • 100:$0.3210
  • 1000:$0.2480
BSC120N03LSGATMA1
DISTI # 7528173P		Infineon Technologies AGMOSFET N-CHANNEL 30V 12A OPTIMOS3 TDSON8, RL5450
  • 50:£0.3960
  • 250:£0.2420
  • 1250:£0.1860
  • 2500:£0.1760
BSC120N03LSGATMA1
DISTI # BSC120N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,33A,28W,PG-TDSON-84536
  • 1:$0.5914
  • 3:$0.3570
  • 10:$0.2937
  • 100:$0.2571
  • 1000:$0.2320
BSC120N03LSGATMA1
DISTI # C1S322000598911		Infineon Technologies AGMOSFETs
RoHS: Compliant		8784
  • 250:$0.2347
  • 100:$0.2607
  • 25:$0.3664
  • 10:$0.3713
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उपलब्धता
स्टक:
Available
अर्डर मा:
1986
मात्रा प्रविष्ट गर्नुहोस्:
BSC120N03LSGATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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1
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