IRF1405ZSPBF

Mfr. #:: IRF1405ZSPBF
निर्माता:: Infineon Technologies
विवरण:: Darlington Transistors MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IRF1405ZSPBF डाटा पाना
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HTML Datasheet:: IRF1405ZSPBF Datasheet IRF1405ZSPBF Datasheet (P4-P6)IRF1405ZSPBF Datasheet (P7-P9)IRF1405ZSPBF Datasheet (P10-P12)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: IR

उत्पादन कोटि: FETs - एकल

प्याकेजिङ: ट्यूब

एकाइ - वजन: 0.139332 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: TO-252-3

प्रविधि: सि

च्यानलहरूको संख्या: 1 Channel

कन्फिगरेसन: एकल

ट्रान्जिस्टर-प्रकार: 1 N-Channel

Pd-शक्ति-डिसिपेशन: 230 W

अधिकतम-सञ्चालन-तापमान: + 175 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 82 ns

उदय-समय: 110 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 150 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 55 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 4.9 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 48 ns

सामान्य-टर्न-अन-डिले-समय: 18 ns

Qg-गेट-चार्ज: 120 nC

च्यानल-मोड: वृद्धि

Tags: IRF1405ZS, IRF1405Z, IRF1405, IRF140, IRF14, IRF1, IRF

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1405ZSPBF विवरण

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***Yang: Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: N CHANNEL MOSFET, 55V, 75A, D2-PAK; Tran; N CHANNEL MOSFET, 55V, 75A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

*** Electronics: In a Tube of 50, IRF1010NSPBF N-Channel MOSFET, 85 A, 55 V HEXFET, 3-Pin D2PAK Infineon

***ure Electronics: Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 85A D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, 55V, 84A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis

***icroelectronics: N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; On State resistance @ Vgs = 10V: 8.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 320A; SMD Marking: 60N55F3; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 60V, 57A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:57A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:230A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ure Electronics: N-Channel 55 V 0.0065 Ohm Surface Mount STripFET II Power MosFet - D2PAK

***Yang: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ource: TRANSISTOR | MOSFET | N-CHANNEL | 55V VBRDSS | 80A ID | TO-263AB

***ark: MOSFET, N CHANNEL, 55V, 80A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***roFlash: Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***icroelectronics: N-CHANNEL 55V 0.0065 OHM 80A D2PAK STRIPFET II MOSFET

***ical: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 55V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power

***ical: Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

***ernational Rectifier: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***(Formerly Allied Electronics): MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***icroelectronics: N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

*** Source Electronics: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK

***ure Electronics: STB120 Series 40 V 80 A 4 mOhm 110 W 80 nC N-Channel MOSFET - D2PAK

***r Electronics: Power Field-Effect Transistor, 80A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: MOSFET, N CH, 40V, 80A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes

***ure Electronics: N-Channel 60 V 5 mohm Surface Mount PowerTrench® Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ

***Yang: Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***et: TO-263AB, N-CHANNEL POWERTRENCH MOSFET 60V, 80A, 5MOHMS

***ment14 APAC: MOSFET, N-CH, 80A, 60V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:60V; On Resistance

***r Electronics: Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 80A, 60V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 245W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***icroelectronics: N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package

*** Source Electronics: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK

***r Electronics: Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***(Formerly Allied Electronics): IRL3705NSPBF N-channel MOSFET Transistor; 89 A; 55 V; 3-Pin D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, N, 55V, 89A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 89A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Diss

***ure Electronics: Single N-Channel 55 V 6.5 mOhm 76 nC HEXFET® Power Mosfet - D2PAK

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:170W; No. of Pins:3Pins RoHS Compliant: Yes

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IRF1405ZSPBF DISTI # IRF1405ZSPBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 75A D2PAK RoHS: Compliant Min Qty: 400 Container: Tube	Limited Supply - Call
IRF1405ZSPBF DISTI # 91Y4725	Infineon Technologies AG	MOSFET, N-CH, 55V, 150A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:150A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power , RoHS Compliant: Yes	0
IRF1405ZSPBF DISTI # 70018170	Infineon Technologies AG	IRF1405ZSPBF N-channel MOSFET Transistor,150 A,55 V,4-Pin D2PAK RoHS: Compliant	0	400:$1.5800
IRF1405ZSPBF DISTI # 942-IRF1405ZSPBF	Infineon Technologies AG	MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC RoHS: Compliant	80	1:$2.8500 10:$2.4200 100:$1.9400 250:$1.8400 500:$1.6900 1000:$1.4000 2500:$1.3000 5000:$1.2200
IRF1405ZSPBF	International Rectifier	Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2450	1000:$1.1500 500:$1.2100 100:$1.2600 25:$1.3100 1:$1.4100
IRF1405ZSPBF	International Rectifier	75 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	2	3:$2.4975 1:$2.9970
IRF1405ZSPBF	International Rectifier	RoHS: Compliant	Europe - 700
IRF1405ZSPBF DISTI # 2579970	Infineon Technologies AG	MOSFET, N-CH, 55V, 150A, TO-263-3 RoHS: Compliant	38	1:£2.4300 10:£1.8300 100:£1.4700 250:£1.3900 500:£1.2800

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IRF1405ZSTRLPBF OMO.#: OMO-IRF1405ZSTRLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 75A D2PAK
	Mfr.#: IRF1407STRR OMO.#: OMO-IRF1407STRR-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 100A D2PAK
	Mfr.#: IRF1404 OMO.#: OMO-IRF1404-1190	MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
	Mfr.#: IRF1404ZSTRLPBF OMO.#: OMO-IRF1404ZSTRLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 180A D2PAK
	Mfr.#: IRF1404ZSTRLPBF,IRF1404Z OMO.#: OMO-IRF1404ZSTRLPBF-IRF1404Z-1190	नयाँ र मौलिक
	Mfr.#: IRF1405STRRPBF OMO.#: OMO-IRF1405STRRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 131A D2PAK
	Mfr.#: IRF1405ZSTRL7PP OMO.#: OMO-IRF1405ZSTRL7PP-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 150A D2PAK-7
	Mfr.#: IRF1407PBF,IRF1407,F1407 OMO.#: OMO-IRF1407PBF-IRF1407-F1407-1190	नयाँ र मौलिक
	Mfr.#: IRF1407SPBF OMO.#: OMO-IRF1407SPBF-1190	MOSFET, 75V, 100A, 7.8 MOHM, 160 NC QG, D2-PAK
	Mfr.#: IRF1404ZLPBF OMO.#: OMO-IRF1404ZLPBF-126	IGBT Transistors MOSFET MOSFT 40V 190A 3.7mOhm 100nC

उपलब्धता

स्टक:: Available
अर्डर मा:: 4000
मात्रा प्रविष्ट गर्नुहोस्:

IRF1405ZSPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.५४~~; ~~US$ १.५४~~

10: ~~US$ १.४७~~; ~~US$ १४.६८~~

100: ~~US$ १.३९~~; ~~US$ १३९.०५~~

500: ~~US$ १.३१~~; ~~US$ ६५६.६५~~

1000: ~~US$ १.२४~~; ~~US$ १ २३६.००~~

बाट सुरु गर्नुहोस्

IRF1405ZS 12
IRF1405Z 22
IRF1405 37
IRF140 86
IRF14 94
IRF1 280
IRF 8615

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IRF1405ZSPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes