STGPL6NC60DI

Mfr. #:: STGPL6NC60DI
निर्माता:: STMicroelectronics
विवरण:: IGBT Transistors 600 V - 6 A Hyper fast IGBT
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: STGPL6NC60DI डाटा पाना
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थप जानकारी:: STGPL6NC60DI थप जानकारी STGPL6NC60DI Product Details

उत्पादन विशेषता
विशेषता मान

निर्माता:: STM माइक्रोइलेक्ट्रोनिक्स

उत्पादन कोटि:: IGBT ट्रान्जिस्टरहरू

RoHS:: Y

प्रविधि:: सि

प्याकेज / केस:: TO-220-3

माउन्टिङ शैली:: प्वाल मार्फत

कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:: 600 V

कलेक्टर-एमिटर संतृप्ति भोल्टेज:: 1.9 V

अधिकतम गेट एमिटर भोल्टेज:: 20 V

25 C मा निरन्तर कलेक्टर वर्तमान:: 14 A

Pd - शक्ति अपव्यय:: 56 W

शृङ्खला:: STGPL6NC60DI

प्याकेजिङ:: ट्यूब

ब्रान्ड:: STM माइक्रोइलेक्ट्रोनिक्स

गेट-एमिटर चुहावट वर्तमान:: 100 nA

उत्पादन प्रकार:: IGBT ट्रान्जिस्टरहरू

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: IGBTs

एकाइ वजन:: 0.081130 oz

Tags: STGP, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGPL6NC60DI विवरण

***ical: Trans IGBT Chip N-CH 600V 14A 56000mW 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: STG Series Powermesh Low Turn Off Energy Through Hole IGBT - TO-220-2

***r Electronics: Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 6 A, 600 V hyper fast IGBT with Ultrafast diode

***-Wing Technology: STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins

***ical: Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ure Electronics: STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220

***ical: Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ment14 APAC: IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Source Electronics: Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ical: Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP06N60T Series 600 V 12 A Through Hole Low Loss IGBT - PG-TO-220-3

***ineon SCT: Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***p One Stop: Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP - TO-220FP

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;

***nell: IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
STGPL6NC60DI DISTI # 497-10072-5-ND	STMicroelectronics	IGBT 600V 14A 56W TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$0.8633
STGPL6NC60DI DISTI # STGPL6NC60DI	STMicroelectronics	Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGPL6NC60DI) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.8499 2000:$0.8099 4000:$0.7729 6000:$0.7389 10000:$0.7239
STGPL6NC60DI DISTI # STGPL6NC60DI	STMicroelectronics	Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube (Alt: STGPL6NC60DI) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0
STGPL6NC60DI DISTI # 511-STGPL6NC60DI	STMicroelectronics	IGBT Transistors 600 V - 6 A Hyper fast IGBT RoHS: Compliant	0	1:$1.6700 10:$1.4200 100:$1.1400 500:$0.9930 1000:$0.8230

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: FAN7382MX OMO.#: OMO-FAN7382MX	Gate Drivers Half Bridge Gate Dvr
	Mfr.#: NCP5106ADR2G OMO.#: OMO-NCP5106ADR2G	Gate Drivers HIGH VOLT MOSFET DR LO MOSFET IGBT DRVR
	Mfr.#: IRS2103STRPBF OMO.#: OMO-IRS2103STRPBF	Gate Drivers Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns
	Mfr.#: STGF10NC60KD OMO.#: OMO-STGF10NC60KD	IGBT Transistors PowerMESH&#34 IGBT
	Mfr.#: STGP10NC60KD OMO.#: OMO-STGP10NC60KD	IGBT Transistors PowerMESH&#34 IGBT
	Mfr.#: STF11N60DM2 OMO.#: OMO-STF11N60DM2	MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
	Mfr.#: IRS2103STRPBF OMO.#: OMO-IRS2103STRPBF-INFINEON-TECHNOLOGIES	Gate Drivers Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns
	Mfr.#: STGP10NC60KD OMO.#: OMO-STGP10NC60KD-STMICROELECTRONICS	IGBT 600V 20A 65W TO220
	Mfr.#: STGF10NC60KD OMO.#: OMO-STGF10NC60KD-STMICROELECTRONICS	IGBT 600V 9A 25W TO220FP
	Mfr.#: STF11N60DM2 OMO.#: OMO-STF11N60DM2-STMICROELECTRONICS	N-CHANNEL 600 V, 0.26 OHM TYP.,

उपलब्धता

स्टक:: 996
अर्डर मा:: 2979
मात्रा प्रविष्ट गर्नुहोस्:

STGPL6NC60DI को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.६६~~; ~~US$ १.६६~~

10: ~~US$ १.४१~~; ~~US$ १४.१०~~

100: ~~US$ १.१३~~; ~~US$ ११३.००~~

500: ~~US$ ०.९९~~; ~~US$ ४९६.५०~~

1000: ~~US$ ०.८२~~; ~~US$ ८२३.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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STGPL6NC60DI

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes