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SIS410DN-T1-GE3

SIS410DN-T1-GE3
Mfr. #:
SIS410DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIS410DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIS410DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
3.3 mm
शृङ्खला:
SIS
चौडाइ:
3.3 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SIS410DN-GE3
Tags
SIS410D, SIS410, SIS41, SIS4, SIS
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    P***o
    P***o
    UA

    Posilka went to the ukrainian mayzha city. not provirovyav. sverletsky by sending shvidko! i recommend!

    2019-03-20
    S***n
    S***n
    RU

    It was desirable to pack! But it's okay!

    2019-04-12
    A***V
    A***V
    RU

    The product corresponds to the description. Delivery 2 months. thank you.

    2019-01-20
***ure Electronics
Single N-Channel 20 V 0.0048 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
***enic
20V 35A 4.8m´Î@10V20A 3.8W 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 20V, 35A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
भाग # Mfg। विवरण स्टक मूल्य
SIS410DN-T1-GE3
DISTI # V36:1790_09216084		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000000:$0.4227
  • 1500000:$0.4229
  • 300000:$0.4329
  • 30000:$0.4484
  • 3000:$0.4509
SIS410DN-T1-GE3
DISTI # V72:2272_09216084		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		161825In Stock
    • 1000:$0.4975
    • 500:$0.6302
    • 100:$0.7629
    • 10:$0.9790
    • 1:$1.0900
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		161825In Stock
    • 1000:$0.4975
    • 500:$0.6302
    • 100:$0.7629
    • 10:$0.9790
    • 1:$1.0900
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		159000In Stock
    • 15000:$0.4122
    • 6000:$0.4283
    • 3000:$0.4508
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R (Alt: SIS410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4459
    • 18000:€0.4659
    • 12000:€0.5269
    • 6000:€0.6499
    • 3000:€0.9059
    SIS410DN-T1-GE3
    DISTI # SIS410DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.3759
    • 18000:$0.3859
    • 12000:$0.3969
    • 6000:$0.4139
    • 3000:$0.4259
    SIS410DN-T1-GE3
    DISTI # 08R0706    		Vishay IntertechnologiesMOSFET, N CH, 20V, 35A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52W RoHS Compliant: Yes0
    • 12000:$0.3850
    • 6000:$0.4340
    • 3000:$0.4560
    • 1:$0.4590
    SIS410DN-T1-GE3
    DISTI # 05W6932    		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
    • 1000:$0.4870
    • 500:$0.6080
    • 250:$0.6510
    • 100:$0.6860
    • 10:$0.8680
    • 1:$0.8960
    SIS410DN-T1-GE3
    DISTI # 55R1905    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):4mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:5.2W,Operating RoHS Compliant: Yes1220
    • 1000:$0.5640
    • 500:$0.5960
    • 100:$0.6930
    • 50:$0.7630
    • 25:$0.8320
    • 10:$0.9020
    • 1:$1.1000
    SIS410DN-T1-GE3
    DISTI # 781-SIS410DN-T1-GE3    		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		7753
    • 1:$1.0800
    • 10:$0.8920
    • 100:$0.6850
    • 500:$0.5890
    • 1000:$0.4640
    • 3000:$0.4330
    • 6000:$0.4120
    • 9000:$0.3960
    SIS410DN-T1-GE3
    DISTI # 1779235    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK8
    RoHS: Compliant    		1221
    • 1000:$0.7500
    • 500:$0.9500
    • 100:$1.1500
    • 10:$1.4800
    • 1:$1.6400
    SIS410DN-T1-GE3
    DISTI # 1779235    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, POWERPAK81426
    • 500:£0.4280
    • 250:£0.4630
    • 100:£0.4970
    • 25:£0.6470
    • 5:£0.7600
    SIS410DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      SIS410DN-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8Americas - 6000
      • 3000:$0.4250
      • 6000:$0.4040
      • 12000:$0.3910
      • 18000:$0.3800
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      उपलब्धता
      स्टक:
      13
      अर्डर मा:
      1996
      मात्रा प्रविष्ट गर्नुहोस्:
      SIS410DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.०८
      US$ १.०८
      10
      US$ ०.८९
      US$ ८.९२
      100
      US$ ०.६८
      US$ ६८.५०
      500
      US$ ०.५९
      US$ २९४.५०
      1000
      US$ ०.४६
      US$ ४६४.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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