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FCP125N60E

FCP125N60E
Mfr. #:
FCP125N60E
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FCP125N60E डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
FCP125N60E थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
29 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
125 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, 30 V
Qg - गेट चार्ज:
75 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
278 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
SuperFET II
प्याकेजिङ:
ट्यूब
उचाइ:
16.3 mm
लम्बाइ:
10.67 mm
शृङ्खला:
FCP125N60E
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.7 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
25 S
पतन समय:
23 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
106 ns
सामान्य टर्न-अन ढिलाइ समय:
23 ns
एकाइ वजन:
0.063493 oz
Tags
FCP125, FCP12, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-220
***ical
Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 125OHM SLOW VERSION
***ark
MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:278W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 29A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.102ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
भाग # Mfg। विवरण स्टक मूल्य
FCP125N60E
DISTI # V99:2348_14141718		ON SemiconductorSUPERFET2 600V 125OHM SLOW VER490
  • 5000:$1.7280
  • 2500:$1.7560
  • 1000:$1.8170
  • 500:$1.9930
  • 250:$2.2439
  • 100:$2.3830
  • 10:$2.7780
  • 1:$3.6278
FCP125N60E
DISTI # V36:1790_14141718		ON SemiconductorSUPERFET2 600V 125OHM SLOW VER0
  • 800000:$1.4620
  • 400000:$1.4640
  • 80000:$1.7010
  • 8000:$2.1180
  • 800:$2.1870
FCP125N60E
DISTI # FCP125N60E-ND		ON SemiconductorMOSFET N-CH 600V 29A TO220
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$2.1871
FCP125N60E
DISTI # 25887487		ON SemiconductorSUPERFET2 600V 125OHM SLOW VER490
  • 4:$3.6278
FCP125N60E
DISTI # FCP125N60E		ON SemiconductorSUPERFET2 600V 125OHM SLOW VERSION - Rail/Tube (Alt: FCP125N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 4800:$1.4900
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
FCP125N60E
DISTI # FCP125N60E		ON SemiconductorSUPERFET2 600V 125OHM SLOW VERSION - Bulk (Alt: FCP125N60E)
Min Qty: 168
Container: Bulk		Americas - 0
  • 840:$1.7900
  • 1680:$1.7900
  • 168:$1.8900
  • 336:$1.8900
  • 504:$1.8900
FCP125N60E
DISTI # 512-FCP125N60E		ON SemiconductorMOSFET 600V 29A N-Chnl SuperFET Easy-Drive
RoHS: Compliant		1048
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2500:$1.6600
  • 5000:$1.6000
FCP125N60EFairchild Semiconductor Corporation 
RoHS: Not Compliant		642
  • 1000:$1.8300
  • 500:$1.9300
  • 100:$2.0000
  • 25:$2.0900
  • 1:$2.2500
FCP125N60E
DISTI # 2565217		ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-220-3
RoHS: Compliant		706
  • 1600:$3.8900
  • 800:$4.1700
  • 100:$5.6900
  • 10:$6.9500
  • 1:$7.7900
FCP125N60E
DISTI # 2565217		ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-220-3707
  • 500:£1.4300
  • 250:£1.5900
  • 100:£1.6700
  • 10:£1.9400
  • 1:£2.5700
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 HEATSINK TO-220 2.6W ALUMINUM
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उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
FCP125N60E को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.३२
US$ ३.३२
10
US$ २.८२
US$ २८.२०
100
US$ २.४४
US$ २४४.००
250
US$ २.३२
US$ ५८०.००
500
US$ २.०८
US$ १ ०४०.००
1000
US$ १.७५
US$ १ ७५०.००
2500
US$ १.६६
US$ ४ १५०.००
5000
US$ १.६०
US$ ८ ०००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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