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SIR624DP-T1-RE3

SIR624DP-T1-RE3
Mfr. #:
SIR624DP-T1-RE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR624DP-T1-RE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
18.6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
60 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
30 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
52 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIR
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
26 S
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
18 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
16 ns
सामान्य टर्न-अन ढिलाइ समय:
9 ns
Tags
SIR62, SIR6, SIR
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 200V 18.6A 8-Pin PowerPAK SOIC
***i-Key
N-CHANNEL 200-V (D-S) MOSFET
***ark
Mosfet, N-Ch, 200V, 18.6A, 150Deg C, 52W; Transistor Polarity:n Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 18.6A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:ThunderFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 200V, 18.6A, 150°C, 52W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18.6A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.05ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:52W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:ThunderFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
छवि भाग # विवरण
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-RE3

Mfr.#: SIR624DP-T1-RE3

OMO.#: OMO-SIR624DP-T1-RE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3-VISHAY

 MOSFET N-CH 200V 18.6A SO-8
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
SIR624DP-T1-RE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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