SI9410BDY-T1-E3

SI9410BDY-T1-E3
Mfr. #:
SI9410BDY-T1-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI9410BDY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI9410BDY-T1-E3 DatasheetSI9410BDY-T1-E3 Datasheet (P4-P6)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI9
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI9410BDY-E3
एकाइ वजन:
0.017870 oz
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.1A; On Resistance, Rds(on):24mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, N REEL 2500; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.2A; Resistance, Rds On:0.024ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:15nC; No. of Pins:8; Power, Pd:1.5W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.024ohm; Resistance, Rds on @ Vgs = 4.5V:0.033ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:11ns; Time, Rise:15ns; Time, t Off:30ns; Time, t On:10ns; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:12mm
भाग # Mfg। विवरण स्टक मूल्य
SI9410BDY-T1-E3
DISTI # SI9410BDY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9410BDY-T1-E3
    DISTI # SI9410BDY-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI9410BDY-T1-E3
      DISTI # SI9410BDY-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI9410BDY-T1-E3
        DISTI # 781-SI9410BDY-T1-E3
        Vishay IntertechnologiesMOSFET 30V 8.1A 0.024Ohm
        RoHS: Compliant
        0
          SI9410BDY-T1
          DISTI # 781-SI9410BDY
          Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W
          RoHS: Not compliant
          0
            SI9410BDY-T1-E3Vishay Intertechnologies 1150
              SI9410BDY-T1-E3Vishay Intertechnologies 2066
                SI9410BDY-T1-E3Vishay Intertechnologies 2892
                  SI9410BDY-T1-E3Vishay Siliconix 1728
                    SI9410BDYT1E3Vishay Intertechnologies 
                    RoHS: Compliant
                    Europe - 2025
                      छवि भाग # विवरण
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3

                      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3

                      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

                      IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

                      IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
                      SI9410B

                      Mfr.#: SI9410B

                      OMO.#: OMO-SI9410B-1190

                      नयाँ र मौलिक
                      SI9410BDY

                      Mfr.#: SI9410BDY

                      OMO.#: OMO-SI9410BDY-1190

                      POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
                      SI9410BDY-T1

                      Mfr.#: SI9410BDY-T1

                      OMO.#: OMO-SI9410BDY-T1-1190

                      MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
                      SI9410BDY-T1-E3.

                      Mfr.#: SI9410BDY-T1-E3.

                      OMO.#: OMO-SI9410BDY-T1-E3--1190

                      नयाँ र मौलिक
                      उपलब्धता
                      स्टक:
                      Available
                      अर्डर मा:
                      3000
                      मात्रा प्रविष्ट गर्नुहोस्:
                      SI9410BDY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
                      बाट सुरु गर्नुहोस्
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