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R6047ENZ1C9

R6047ENZ1C9
Mfr. #:
R6047ENZ1C9
निर्माता:
Rohm Semiconductor
विवरण:
MOSFET 10V Drive Nch MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
R6047ENZ1C9 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
R6047ENZ1C9 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
47 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
72 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
145 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
120 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 N-channel
ब्रान्ड:
ROHM अर्धचालक
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
13 S
पतन समय:
100 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
100 ns
कारखाना प्याक मात्रा:
450
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
260 ns
सामान्य टर्न-अन ढिलाइ समय:
50 ns
भाग # उपनाम:
R6047ENZ1
एकाइ वजन:
0.229281 oz
Tags
R6047ENZ1, R6047E, R6047, R604, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Bulk
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 600V, 47A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 47A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 120W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***et
Transistor MOSFET N-Channel 600V 53.5A 3-Pin TO-247 Tube
***ure Electronics
N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247
***ark
MOSFET, N-CH, 600V, 53.5A, 150DEG C/391W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:53.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
***ure Electronics
N-Channel 600 V 79 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
***nell
MOSFET, N-CH, 600V, 40A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***et
Transistor MOSFET N-Channel 650V 33A 3-Pin TO-247 Tube
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
Mosfet, N-Ch, 650V, 33A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***icroelectronics
N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
***el Electronic
STMICROELECTRONICS STW56N65DM2 Power MOSFET, N Channel, 49 A, 650 V, 0.049 ohm, 10 V, 3 V
***nell
MOSFET, N-CH, 650V, 49A, TO247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 49A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.049ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***icroelectronics
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
***p One Stop Global
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 650V, 33A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***ure Electronics
Single N-Channel 600 V 60 mOhm 68 nC CoolMOS™ Power Mosfet - TO-247-3
***nell
MOSFET, N-CH, 600V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
ROHM R6047ENZ1 N-Channel Power MOSFET
ROHM R6047ENZ1 N-Channel Power MOSFET has low on-resistance and fast switching speed. It has a gate-source voltage (VGSS) guaranteed to be 20V. Drive circuits can be simple and parallel use is easy. It has a Pb-free lead plating and is RoHS compliant.
भाग # Mfg। विवरण स्टक मूल्य
R6047ENZ1C9
DISTI # R6047ENZ1C9-ND		ROHM SemiconductorMOSFET N-CH 600V 47A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		164In Stock
  • 900:$4.3245
  • 450:$4.7430
  • 25:$5.7196
  • 10:$5.9990
  • 1:$6.6400
R6047ENZ1C9
DISTI # R6047ENZ1C9		ROHM SemiconductorTrans MOSFET N-CH 600V ±47A 3-Pin TO-247 Tube (Alt: R6047ENZ1C9)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 250:€3.8600
  • 100:€5.1200
  • 50:€5.6800
  • 10:€6.2300
  • 5:€6.9200
  • 1:€7.5700
R6047ENZ1C9
DISTI # R6047ENZ1C9		ROHM SemiconductorTrans MOSFET N-CH 600V ±47A 3-Pin TO-247 Tube - Tape and Reel (Alt: R6047ENZ1C9)
RoHS: Compliant
Min Qty: 450
Container: Reel		Americas - 0
    R6047ENZ1C9
    DISTI # 99Y2419    		ROHM SemiconductorMOSFET, N-CH, 600V, 47A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:47A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.066ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
    • 250:$4.7500
    • 100:$4.9700
    • 50:$5.3500
    • 25:$5.7200
    • 10:$6.0000
    • 1:$6.6400
    R6047ENZ1C9
    DISTI # 755-R6047ENZ1C9    		ROHM SemiconductorMOSFET 10V Drive Nch MOSFET
    RoHS: Compliant    		481
    • 1:$6.6400
    • 10:$6.0000
    • 25:$5.7200
    • 100:$4.9700
    • 250:$4.7500
    • 450:$4.3300
    • 900:$3.7700
    R6047ENZ1C9ROHM Semiconductor 315
    • 184:$10.0160
    • 87:$10.9550
    • 1:$14.0850
    R6047ENZ1C9ROHM Semiconductor 450
    • 1:¥113.3480
    • 100:¥64.2683
    • 450:¥40.7461
    R6047ENZ1C9ROHM SemiconductorRoHS(ship within 1day)394
    • 1:$8.4700
    • 10:$6.9700
    • 50:$6.6800
    • 100:$6.5000
    • 500:$6.3600
    • 1000:$6.2600
    R6047ENZ1C9
    DISTI # 2630122    		ROHM SemiconductorMOSFET, N-CH, 600V, 47A, TO-247
    RoHS: Compliant    		26
    • 10:£2.9200
    • 5:£2.9300
    • 1:£2.9400
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    उपलब्धता
    स्टक:
    481
    अर्डर मा:
    2464
    मात्रा प्रविष्ट गर्नुहोस्:
    R6047ENZ1C9 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ६.६४
    US$ ६.६४
    10
    US$ ६.००
    US$ ६०.००
    25
    US$ ५.७२
    US$ १४३.००
    100
    US$ ४.९७
    US$ ४९७.००
    250
    US$ ४.७५
    US$ १ १८७.५०
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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