SI6423DQ-T1-E3

Mfr. #:: SI6423DQ-T1-E3
निर्माता:: Vishay
विवरण:: Darlington Transistors MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI6423DQ-T1-E3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: VISHAY

उत्पादन कोटि: FETs - एकल

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI6423DQ-T1

एकाइ - वजन: 0.005573 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 8-TSSOP (0.173", 4.40mm Width)

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 1 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 8-TSSOP

कन्फिगरेसन: एकल

FET-प्रकार: MOSFET P- च्यानल, धातु अक्साइड

पावर-अधिकतम: 1.05W

ट्रान्जिस्टर-प्रकार: 1 P-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 12V

इनपुट-Capacitance-Ciss-Vds: -

FET - सुविधा: मानक

वर्तमान-निरन्तर-नाली-Id-25°C: 8.2A (Ta)

Rds-on-max-Id-Vgs: 8.5 mOhm @ 9.5A, 4.5V

Vgs-th-max-Id: 800mV @ 400μA

गेट-चार्ज-Qg-Vgs: 110nC @ 5V

Pd-शक्ति-डिसिपेशन: 1.05 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 75 ns

उदय-समय: 75 ns

Vgs-गेट-स्रोत-भोल्टेज: 8 V

आईडी-निरन्तर-नाली-वर्तमान: 8.2 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: - 12 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 8.5 mOhms

ट्रान्जिस्टर-ध्रुवता: P- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 270 ns

सामान्य-टर्न-अन-डिले-समय: 50 ns

च्यानल-मोड: वृद्धि

Tags: SI6423DQ-T, SI6423, SI642, SI64, SI6

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6423DQ-T1-E3 विवरण

***ure Electronics: Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8

***et Europe: Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R

***i-Key: MOSFET P-CH 12V 8.2A 8-TSSOP

***ronik: P-CH 12V 9A 9mOhm TSSOP-8 RoHSconf

***: P-CHANNEL 12-V (D-S) MOSFET

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-9.5A; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.0085ohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-0.4V; Power Dissipation, Pd:1.05W ;RoHS Compliant: Yes

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI6423DQ-T1-E3 DISTI # V72:2272_09215414	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.6685 1000:$0.7170 500:$0.8462 250:$0.9589 100:$0.9692 25:$1.1909 10:$1.2049 1:$1.4041
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8465
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI6423DQ-T1-E3 DISTI # 16623336	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.7509
SI6423DQ-T1-E3 DISTI # 31353840	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	9:$1.4041
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6423DQ-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7939 6000:$0.7699 12000:$0.7389 18000:$0.7179 30000:$0.6989
SI6423DQ-T1-E3 DISTI # 06J8059	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, 9.5A, TSSOP, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.9580 1000:$0.9010 2000:$0.8550 4000:$0.7700 6000:$0.7410 10000:$0.7130
SI6423DQ-T1-E3 DISTI # 85W2157	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-9.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0068ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:1.5W RoHS Compliant: No	0	1:$2.0000 25:$1.9000 50:$1.7600 100:$1.5900 250:$1.4200 500:$1.2400 1000:$1.0600
SI6423DQ-T1-E3 DISTI # 781-SI6423DQ-T1-E3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs TSSOP-8 RoHS: Compliant	2530	1:$1.7000 10:$1.4100 100:$1.1000 500:$0.9550 1000:$0.7920 3000:$0.7370
SI6423DQ-T1-E3	Vishay Siliconix	8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	4	3:$1.8188 1:$2.1825
SI6423DQ-T1-E3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs TSSOP-8	Americas -
SI6423DQ-T1-E3 DISTI # C1S803601453370	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3001:$0.6808

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI6423DQ-T1-GE3 OMO.#: OMO-SI6423DQ-T1-GE3	MOSFET -12V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6423DQ-T1-E3 OMO.#: OMO-SI6423DQ-T1-E3	MOSFET -12V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6423DQ-T1-E3 OMO.#: OMO-SI6423DQ-T1-E3-VISHAY	Darlington Transistors MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
	Mfr.#: SI6423DQ-T1-E3-CUT TAPE OMO.#: OMO-SI6423DQ-T1-E3-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: SI6423DQ OMO.#: OMO-SI6423DQ-1190	नयाँ र मौलिक
	Mfr.#: SI6423DQ-T1-GE3 OMO.#: OMO-SI6423DQ-T1-GE3-VISHAY	MOSFET P-CH 12V 8.2A 8-TSSOP
	Mfr.#: SI6423DQ-T1-GE3CT-ND OMO.#: OMO-SI6423DQ-T1-GE3CT-ND-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 4500
मात्रा प्रविष्ट गर्नुहोस्:

SI6423DQ-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.००~~; ~~US$ १.००~~

10: ~~US$ ०.९५~~; ~~US$ ९.५३~~

100: ~~US$ ०.९०~~; ~~US$ ९०.२५~~

500: ~~US$ ०.८५~~; ~~US$ ४२६.१५~~

1000: ~~US$ ०.८०~~; ~~US$ ८०२.२०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SI6423DQ-T 4
SI6423 5
SI642 14
SI64 152
SI6 530

SI6423DQ-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes