OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

MJE181STU

MJE181STU
Mfr. #:
MJE181STU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
Bipolar Transistors - BJT NPN Epitaxial Sil
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MJE181STU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
द्विध्रुवी ट्रान्जिस्टर - BJT
RoHS:
Y
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-126-3
ट्रान्जिस्टर ध्रुवता:
NPN
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
60 V
कलेक्टर - आधार भोल्टेज VCBO:
80 V
उत्सर्जक - आधार भोल्टेज VEBO:
7 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.7 V
अधिकतम DC कलेक्टर वर्तमान:
3 A
ब्यान्डविथ उत्पादन एफटी प्राप्त गर्नुहोस्:
50 MHz
न्यूनतम परिचालन तापमान:
- 65 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
MJE181
DC वर्तमान लाभ hFE अधिकतम:
250
उचाइ:
11 mm
लम्बाइ:
8 mm
प्याकेजिङ:
ट्यूब
चौडाइ:
3.25 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
3 A
DC कलेक्टर/बेस गेन hfe न्यूनतम:
50
Pd - शक्ति अपव्यय:
12.5 W
उत्पादन प्रकार:
BJTs - द्विध्रुवी ट्रान्जिस्टर
कारखाना प्याक मात्रा:
1920
उपश्रेणी:
ट्रान्जिस्टरहरू
एकाइ वजन:
0.026843 oz
Tags
MJE181, MJE18, MJE1, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,bjt,npn,60V V(Br)Ceo,3A I(C),to-126 Rohs Compliant: Yes
***emi
3.0 A, 60 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***ark
Bipolar (BJT) Single Transistor, NPN, 60 V, 1.25 W, 1.5 A, 40
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bulk
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***nell
TRANSISTOR, NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 500mA; Hfe Min: 100; Termination Type: Through Hole; Transistor Type: Power Bipolar
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
***ure Electronics
BD135 Series 60 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-126
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Tube
***el Electronic
Bipolar Transistors - BJT NPN Epitaxial Sil
***nell
TRANSISTOR, BIPOL, NPN, 60V, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 12.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 63hFE; Transis
***et
Bipolar (BJT) Transistor NPN 45V 2A 3MHz 25W Through Hole TO-126
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***ark
RAIL / NPN/2A/45V/TO-126
***el Electronic
JFET N-CH 30V 625MW TO92
भाग # Mfg। विवरण स्टक मूल्य
MJE181STU
DISTI # V36:1790_06302177		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1288
  • 25000:$0.1318
  • 10000:$0.1388
  • 2500:$0.1487
  • 1000:$0.1744
  • 100:$0.2247
  • 10:$0.4029
  • 1:$0.4868
MJE181STU
DISTI # MJE181STU-ND		ON SemiconductorTRANS NPN 60V 3A TO-126
RoHS: Compliant
Min Qty: 1
Container: Tube		1129In Stock
  • 1000:$0.1830
  • 500:$0.2368
  • 100:$0.3014
  • 10:$0.4040
  • 1:$0.4700
MJE181STU
DISTI # 26636602		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST5760
  • 50000:$0.1301
  • 25000:$0.1307
  • 10000:$0.1376
  • 2500:$0.1475
  • 1920:$0.1732
MJE181STU
DISTI # 27461005		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1385
  • 25000:$0.1417
  • 10000:$0.1492
  • 2500:$0.1599
  • 1000:$0.1875
  • 100:$0.2416
  • 49:$0.3938
MJE181STU
DISTI # MJE181STU		ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 2273
Container: Bulk		Americas - 0
  • 22730:$0.1349
  • 11365:$0.1389
  • 6819:$0.1409
  • 4546:$0.1419
  • 2273:$0.1429
MJE181STU
DISTI # MJE181STU		ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 1920
Container: Tube		Americas - 0
  • 19200:$0.1259
  • 11520:$0.1289
  • 7680:$0.1309
  • 1920:$0.1329
  • 3840:$0.1329
MJE181STU
DISTI # 82C8693		ON SemiconductorTRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-126 ROHS COMPLIANT: YES0
  • 50000:$0.1400
  • 24000:$0.1430
  • 10000:$0.1500
  • 2000:$0.1600
  • 1000:$0.1650
  • 100:$0.2320
  • 10:$0.3450
  • 1:$0.5080
MJE181STU
DISTI # 512-MJE181STU		ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
RoHS: Compliant		5963
  • 1:$0.4500
  • 10:$0.3710
  • 100:$0.2260
  • 1000:$0.1750
  • 2500:$0.1490
MJE181STUFairchild Semiconductor CorporationPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
RoHS: Compliant		5760
  • 500:$0.1500
  • 1000:$0.1500
  • 100:$0.1600
  • 25:$0.1700
  • 1:$0.1800
MJE181STU
DISTI # 8062891		ON SemiconductorTRANSISTORFAIRCHILDMJE181STU, TU720
  • 600:£0.1770
  • 300:£0.2020
  • 120:£0.2260
  • 60:£0.3030
छवि भाग # विवरण
OPA1678IDR

Mfr.#: OPA1678IDR

OMO.#: OMO-OPA1678IDR

 Operational Amplifiers - Op Amps DUAL AUDIO OPAMP
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI

 SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
MJE171G

Mfr.#: MJE171G

OMO.#: OMO-MJE171G

 Bipolar Transistors - BJT 3A 60V 12.5W PNP
MJE181G

Mfr.#: MJE181G

OMO.#: OMO-MJE181G

 Bipolar Transistors - BJT 3A 60V 12.5W NPN
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L

 Common Mode Chokes / Filters 250ohms 3A 50VDC AECQ200 Pwrtrain/Saf
FG16C0G1H104JNT06

Mfr.#: FG16C0G1H104JNT06

OMO.#: OMO-FG16C0G1H104JNT06

 Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 0.1uF C0G 5% LS:2.5mm
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI-INTEGRATED-SILICON-SOLUTION

 SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
1025HC50-RTR

Mfr.#: 1025HC50-RTR

OMO.#: OMO-1025HC50-RTR-EATON

 Fast-acting, high current, surface mount ceramic tube fuses
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L-MURATA-ELECTRONICS

 CMC 3A 2LN 250 OHM SMD
OPA1678IDR

Mfr.#: OPA1678IDR

OMO.#: OMO-OPA1678IDR-TEXAS-INSTRUMENTS

 IC AUDIO AMP 2 CIRCUIT 8SOIC
उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
MJE181STU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.४५
US$ ०.४५
10
US$ ०.३७
US$ ३.७१
100
US$ ०.२३
US$ २२.६०
1000
US$ ०.१८
US$ १७५.००
2500
US$ ०.१५
US$ ३७२.५०
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
More Newest Products
Top