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PHD9NQ20T,118

PHD9NQ20T,118
Mfr. #:
PHD9NQ20T,118
निर्माता:
Nexperia
विवरण:
MOSFET TAPE13 PWR-MOS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
PHD9NQ20T,118 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PHD9NQ20T,118 DatasheetPHD9NQ20T,118 Datasheet (P4-P6)PHD9NQ20T,118 Datasheet (P7-P9)PHD9NQ20T,118 Datasheet (P10-P12)PHD9NQ20T,118 Datasheet (P13)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
नेक्सेरिया
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
44 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
300 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
88 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
2.38 mm
लम्बाइ:
6.73 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
नेक्सेरिया
पतन समय:
15 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
19 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
8 ns
भाग # उपनाम:
/T3 PHD9NQ20T
एकाइ वजन:
0.139332 oz
Tags
PHD9NQ, PHD9N, PHD9, PHD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 400 mOhm 24 nC SMT TrenchMOS Standard Level FET- TO-252
***et Europe
Trans MOSFET N-CH 200V 8.7A 3-Pin(2+Tab) DPAK T/R
***ponent Stockers USA
8.7 A 200 V 0.4 ohm N-CHANNEL Si POWER MOSFET
*** Americas
N-channel Trench MOS TM transi
भाग # Mfg। विवरण स्टक मूल्य
PHD9NQ20T,118
DISTI # V36:1790_06539931		NexperiaPHD9NQ20T/SOT428/DPAK0
  • 10000000:$0.3145
  • 5000000:$0.3147
  • 1000000:$0.3286
  • 100000:$0.3512
  • 10000:$0.3549
PHD9NQ20T,118
DISTI # PHD9NQ20T,118-ND		NexperiaMOSFET N-CH 200V 8.7A DPAK
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.3591
PHD9NQ20T,118
DISTI # PHD9NQ20T,118		NexperiaTrans MOSFET N-CH 200V 8.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: PHD9NQ20T,118)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 10000
  • 25000:$0.3249
  • 15000:$0.3329
  • 10000:$0.3409
  • 5000:$0.3499
  • 2500:$0.3549
PHD9NQ20T,118
DISTI # PHD9NQ20T,118		NexperiaTrans MOSFET N-CH 200V 8.7A 3-Pin(2+Tab) DPAK T/R (Alt: PHD9NQ20T,118)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 2500
  • 25000:€0.3269
  • 15000:€0.3519
  • 10000:€0.3819
  • 5000:€0.4159
  • 2500:€0.5089
PHD9NQ20T,118
DISTI # PHD9NQ20T,118		NexperiaTrans MOSFET N-CH 200V 8.7A 3-Pin(2+Tab) DPAK T/R (Alt: PHD9NQ20T,118)
RoHS: Compliant
Min Qty: 10000
Container: Tape and Reel		Asia - 0
  • 500000:$0.3375
  • 250000:$0.3462
  • 100000:$0.3507
  • 50000:$0.3553
  • 30000:$0.3649
  • 20000:$0.3750
  • 10000:$0.3857
PHD9NQ20T,118
DISTI # 771-PHD9NQ20T118		NexperiaMOSFET TAPE13 PWR-MOS
RoHS: Compliant		9654
  • 1:$0.8900
  • 10:$0.7560
  • 100:$0.5810
  • 500:$0.5140
  • 1000:$0.4050
  • 2500:$0.3600
  • 10000:$0.3460
PHD9NQ20T,118
DISTI # XSKDRABS0015322		NexperiaSmall Signal Field-Effect Transistor,2-Element,Silicon, MS-012AA
RoHS: Compliant		7500 in Stock0 on Order
  • 7500:$0.4652
  • 2500:$0.4984
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OMO.#: OMO-CSM222-30AE

 Heat Sinks HEATSINK BLACK ANODIZED
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Mfr.#: ATA6560-GAQW-N

OMO.#: OMO-ATA6560-GAQW-N-MICROCHIP-TECHNOLOGY

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उपलब्धता
स्टक:
Available
अर्डर मा:
1992
मात्रा प्रविष्ट गर्नुहोस्:
PHD9NQ20T,118 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.८९
US$ ०.८९
10
US$ ०.७६
US$ ७.५६
100
US$ ०.५८
US$ ५८.१०
500
US$ ०.५१
US$ २५७.००
1000
US$ ०.४०
US$ ४०५.००
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