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NUS5530MNR2G

NUS5530MNR2G
Mfr. #:
NUS5530MNR2G
निर्माता:
ON Semiconductor
विवरण:
MOSFET INTEGRATED POWER BJT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NUS5530MNR2G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NUS5530MNR2G DatasheetNUS5530MNR2G Datasheet (P4-P6)NUS5530MNR2G Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
DFN-8
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
3.9 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
200 Ohms
Vgs - गेट-स्रोत भोल्टेज:
35 V
Pd - शक्ति अपव्यय:
635 mW
प्याकेजिङ:
रील
उत्पादन:
MOSFET सानो संकेत
शृङ्खला:
NUS5530MN
ब्रान्ड:
ON अर्धचालक
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
12 S
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.001319 oz
Tags
NUS5, NUS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor; 2 A; 35 V; 8-Pin DFN
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NUS5530MN: Integrated Power MOSFET 20V 3.9A 60 mOhm Dual P-Channel with PNP Low VCE Switching Transistor DFN8
***ark
Transistor,mos-Bjt Power Module,independent,35V V(Br)Ceo,2A I(C)
***et
Integrated Power MOSFET with PNP 8-Pin DFN EP T/R
***ser
Transistors Bipolar- Bias Resistor INTEGRATED POWER BJT
***i-Key
IC MOSFET W/PNP SW TRANS 8-DFN
भाग # Mfg। विवरण स्टक मूल्य
NUS5530MNR2G
DISTI # V36:1790_07283721		ON SemiconductorIntegrated Power MOSFET with PNP 8-Pin DFN EP T/R
RoHS: Compliant		0
    NUS5530MNR2G
    DISTI # NUS5530MNR2GOSTR-ND    		ON SemiconductorIC MOSFET W/PNP SW TRANS 8-DFN
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 3000:$0.6031
    NUS5530MNR2G
    DISTI # NUS5530MNR2G    		ON SemiconductorIntegrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.4829
    • 6000:$0.4799
    • 12000:$0.4739
    • 18000:$0.4679
    • 30000:$0.4559
    NUS5530MNR2G
    DISTI # NUS5530MNR2G    		ON SemiconductorIntegrated Power MOSFET with PNP 8-Pin DFN EP T/R - Bulk (Alt: NUS5530MNR2G)
    RoHS: Compliant
    Min Qty: 610
    Container: Bulk    		Americas - 0
    • 610:$0.5349
    • 612:$0.5319
    • 1222:$0.5249
    • 3050:$0.5179
    • 6100:$0.5059
    NUS5530MNR2G
    DISTI # 70465550    		ON SemiconductorON Semi NUS5530MNR2G Dual PNP Bipolar Transistor,2 A,35 V,8-Pin DFN
    RoHS: Compliant    		0
    • 20:$0.5300
    • 50:$0.5200
    • 100:$0.5100
    • 500:$0.5000
    NUS5530MNR2G
    DISTI # 863-NUS5530MNR2G    		ON SemiconductorMOSFET INTEGRATED POWER BJT
    RoHS: Compliant    		0
    • 3000:$0.4930
    • 9000:$0.4740
    NUS5530MNR2GON SemiconductorPower Field-Effect Transistor, 3.9A I(D), 20V, 0.083ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		105255
    • 1000:$0.5400
    • 500:$0.5700
    • 100:$0.5900
    • 25:$0.6200
    • 1:$0.6600
    NUS5530MNR2GON Semiconductor 1780
      छवि भाग # विवरण
      NUS5530MNR2G

      Mfr.#: NUS5530MNR2G

      OMO.#: OMO-NUS5530MNR2G

      		 MOSFET INTEGRATED POWER BJT
      NUS5530MN

      Mfr.#: NUS5530MN

      OMO.#: OMO-NUS5530MN-1190

      		 नयाँ र मौलिक
      NUS5531MTR2G

      Mfr.#: NUS5531MTR2G

      OMO.#: OMO-NUS5531MTR2G-ON-SEMICONDUCTOR

      		 MOSFET/BJT SGL P-CH 12V 8-WDFN
      NUS5530MNR2G

      Mfr.#: NUS5530MNR2G

      OMO.#: OMO-NUS5530MNR2G-ON-SEMICONDUCTOR

      		 IGBT Transistors MOSFET INTEGRATED POWER BJT
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1000
      मात्रा प्रविष्ट गर्नुहोस्:
      NUS5530MNR2G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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