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SIZ926DT-T1-GE3

SIZ926DT-T1-GE3
Mfr. #:
SIZ926DT-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 25V Vds 16V Vgs PowerPAIR 6 x 5
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIZ926DT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ926DT-T1-GE3 DatasheetSIZ926DT-T1-GE3 Datasheet (P4-P6)SIZ926DT-T1-GE3 Datasheet (P7-P9)SIZ926DT-T1-GE3 Datasheet (P10-P12)SIZ926DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
थप जानकारी:
SIZ926DT-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAIR-6x5-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
25 V
आईडी - निरन्तर ड्रेन वर्तमान:
40 A, 60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.2 mOhms, 4.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.2 V
Vgs - गेट-स्रोत भोल्टेज:
- 12 V, 16 V
Qg - गेट चार्ज:
12.5 nC, 27 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
20.2 W, 40 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SIZ
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
40 S, 55 S
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
12 ns, 17 ns
सामान्य टर्न-अन ढिलाइ समय:
8 ns, 10 ns
Tags
SIZ92, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET Dual N-Channel 25V 40A@Q1/60A@Q2 8-Pin PowerPAIR T/R
***i-Key
MOSFET 2 N-CH 25V 8-POWERPAIR
***ark
Dual N Channel Mosfet, 60A, 25V; Transistor Polarity:dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0038Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
छवि भाग # विवरण
SISH625DN-T1-GE3

Mfr.#: SISH625DN-T1-GE3

OMO.#: OMO-SISH625DN-T1-GE3

 MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
BAT54CHMFHT116

Mfr.#: BAT54CHMFHT116

OMO.#: OMO-BAT54CHMFHT116

 Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
BAT54AHMFHT116

Mfr.#: BAT54AHMFHT116

OMO.#: OMO-BAT54AHMFHT116

 Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
CRCW04021K00FKEDC

Mfr.#: CRCW04021K00FKEDC

OMO.#: OMO-CRCW04021K00FKEDC

 Thick Film Resistors - SMD 1/16watt 1Kohms 1% Commercial Use
CRCW040210K0FKEDC

Mfr.#: CRCW040210K0FKEDC

OMO.#: OMO-CRCW040210K0FKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 10K 1% ET7
BAT54AHMFHT116

Mfr.#: BAT54AHMFHT116

OMO.#: OMO-BAT54AHMFHT116-ROHM-SEMI

 AUTOMOTIVE SCHOTTKY BARRIER DIOD
BAT54CHMFHT116

Mfr.#: BAT54CHMFHT116

OMO.#: OMO-BAT54CHMFHT116-ROHM-SEMI

 AUTOMOTIVE SCHOTTKY BARRIER DIOD
SISH625DN-T1-GE3

Mfr.#: SISH625DN-T1-GE3

OMO.#: OMO-SISH625DN-T1-GE3-VISHAY

 P-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10V m @ 7.5V 11 m @ 4.5V
CRCW04021K00FKEDC

Mfr.#: CRCW04021K00FKEDC

OMO.#: OMO-CRCW04021K00FKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 1K0 1% ET7
C0603C103K5RACAUTO7411

Mfr.#: C0603C103K5RACAUTO7411

OMO.#: OMO-C0603C103K5RACAUTO7411-1190

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.01uF 0603 X7R 10% AEC-Q200
उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
SIZ926DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.३०
US$ १.३०
10
US$ १.०७
US$ १०.७०
100
US$ ०.८३
US$ ८२.७०
500
US$ ०.७१
US$ ३५५.५०
1000
US$ ०.५६
US$ ५६१.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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