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IRF7831TRPBF

IRF7831TRPBF
Mfr. #:
IRF7831TRPBF
निर्माता:
Infineon / IR
विवरण:
MOSFET MOSFT 30V 21A 3.6mOhm 40nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF7831TRPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7831TRPBF DatasheetIRF7831TRPBF Datasheet (P4-P6)IRF7831TRPBF Datasheet (P7-P9)IRF7831TRPBF Datasheet (P10)
ECAD Model:
थप जानकारी:
IRF7831TRPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
21 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.4 mOhms
Vgs - गेट-स्रोत भोल्टेज:
12 V
Qg - गेट चार्ज:
40 nC
Pd - शक्ति अपव्यय:
2.5 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
रील
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
3.9 mm
ब्रान्ड:
Infineon / IR
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
4000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IRF7831TRPBF SP001563658
एकाइ वजन:
0.019048 oz
Tags
IRF7831TRP, IRF7831T, IRF7831, IRF783, IRF78, IRF7, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 3.1 Milliohms; ID 21A; SO-8; PD 2.5W; VGS +/-12V
***ark
MOSFET Transistor, N Channel, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V
***ure Electronics
Single N-Channel 30 V 3.6 mOhm 40 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 21A 8-Pin SOIC Tube
***p One Stop Japan
Trans MOSFET N-CH 30V 21A 8-Pin SOIC
*** Source Electronics
MOSFET N-CH 30V 21A 8-SOIC
***eco
IC,IRF7831TRPBF,30V SINGLE N-C HANNEL HEXFET PLCC32<NV
***trelec
MOSFET [IR] IRF7831PBF MOSFET
***ukat
N-Ch 30V 21A 2,5W 0,0036R SO8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ment14 APAC
Prices include import duty and tax. MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:21A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:170A; Row Pitch:6.3mm; SMD Marking:IRF7831PBF; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, LOGIC, SO-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0036ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.35V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:21A; Corrente di Impulso Idm:170A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza Esterna:4.05mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.75mm; Marcatura SMD:IRF7831PBF; No. di Transistor:1; Passo Fila:6.3mm; Profondità Esterna:5.2mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:30V; Tensione Vgs Max:2.35V; Tensione Vgs di Misurazione Rds on:10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRF7831TRPBF
DISTI # V72:2272_13890402		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
RoHS: Compliant		749
  • 500:$0.5611
  • 250:$0.6225
  • 100:$0.6294
  • 25:$0.7705
  • 10:$0.7796
  • 1:$0.8826
IRF7831TRPBF
DISTI # IRF7831PBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3948In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IRF7831TRPBF
DISTI # IRF7831PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3948In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IRF7831TRPBF
DISTI # IRF7831PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.5198
IRF7831TRPBF
DISTI # 30701816		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 40000:$0.3292
  • 24000:$0.3349
  • 16000:$0.3465
  • 8000:$0.3599
  • 4000:$0.3733
IRF7831TRPBF
DISTI # 26648810		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
RoHS: Compliant		749
  • 500:$0.5611
  • 250:$0.6225
  • 100:$0.6294
  • 25:$0.7705
  • 19:$0.7796
IRF7831TRPBF
DISTI # IRF7831TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.3889
  • 8000:$0.3749
  • 16000:$0.3609
  • 24000:$0.3489
  • 40000:$0.3429
IRF7831TRPBF
DISTI # IRF7831TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF)
RoHS: Not Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3257
  • 8000:$0.3167
  • 12000:$0.3081
  • 20000:$0.3000
  • 40000:$0.2961
  • 100000:$0.2923
  • 200000:$0.2886
IRF7831TRPBF-1
DISTI # IRF7831TRPBF-1		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF-1)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
    IRF7831TRPBF-1
    DISTI # IRF7831TRPBF-1    		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF-1)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Asia - 0
      IRF7831TRPBF
      DISTI # 33AC5089      		Infineon Technologies AGN CHANNEL MOSFET, 30V, 21A, SOIC,N CHANNEL MOSFET, 30V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:30V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:10V,Threshold RoHS Compliant: Yes0
        IRF7831TRPBF
        DISTI # 70018969        		Infineon Technologies AGMOSFET,30V,21A,3.6 MOHM,40 NC QG,SO-8
        RoHS: Compliant        		0
        • 4000:$1.8600
        • 8000:$1.8230
        • 20000:$1.7670
        • 40000:$1.6930
        • 100000:$1.5810
        IRF7831TRPBF
        DISTI # 942-IRF7831TRPBF        		Infineon Technologies AGMOSFET MOSFT 30V 21A 3.6mOhm 40nC
        RoHS: Compliant        		8533
        • 1:$1.1900
        • 10:$1.0100
        • 100:$0.7750
        • 500:$0.6850
        • 1000:$0.5400
        IRF7831TRPBFInternational Rectifier 1247
          IRF7831TRPBFInternational Rectifier 
          RoHS: Compliant          		Europe - 3118
            IRF7831TRPBF
            DISTI # 1375010            		Infineon Technologies AGN CHANNEL MOSFET, 30V, 21A, SOIC
            RoHS: Compliant            		0
            • 1:$1.8800
            • 10:$1.6000
            • 100:$1.2300
            • 500:$1.0900
            • 1000:$0.8550
            • 4000:$0.7590
            IRF7831TRPBF
            DISTI # 2947033            		Infineon Technologies AGMOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W
            RoHS: Compliant            		1086
            • 5:£0.8510
            • 25:£0.7650
            • 100:£0.5870
            • 250:£0.5530
            • 500:£0.5180
            IRF7831TRPBF
            DISTI # C1S322000571118            		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
            RoHS: Compliant            		4000
            • 4000:$0.4970
            IRF7831TRPBF
            DISTI # C1S322000486430            		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
            RoHS: Compliant            		749
            • 250:$0.6225
            • 100:$0.6294
            • 25:$0.7705
            • 10:$0.7796
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            उपलब्धता
            स्टक:
            Available
            अर्डर मा:
            1990
            मात्रा प्रविष्ट गर्नुहोस्:
            IRF7831TRPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
            सन्दर्भ मूल्य (USD)
            मात्रा
            एकाइ मूल्य
            विस्तार मूल्य
            1
            US$ १.१०
            US$ १.१०
            10
            US$ ०.९४
            US$ ९.४५
            100
            US$ ०.७३
            US$ ७२.६०
            500
            US$ ०.६४
            US$ ३२१.००
            1000
            US$ ०.५१
            US$ ५०७.००
            2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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