IRFS7537TRLPBF

IRFS7537TRLPBF
Mfr. #:
IRFS7537TRLPBF
निर्माता:
Infineon Technologies
विवरण:
MOSFET MOSFET N CH 60V 173A D2PAK
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRFS7537TRLPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IRFS7537TRLPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
173 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
3.3 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.7 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
142 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
230 W
कन्फिगरेसन:
एकल
व्यापार नाम:
बलियो IRFET
प्याकेजिङ:
रील
उचाइ:
2.3 mm
लम्बाइ:
6.5 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
190 S
पतन समय:
84 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
105 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
82 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
भाग # उपनाम:
SP001565228
एकाइ वजन:
0.139332 oz
Tags
IRFS7537, IRFS753, IRFS75, IRFS7, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFS7537PBF N-channel MOSFET Transistor; 173 A; 60 V; 3-Pin D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 3.3 mOhm 142 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK Tube
*** Stop Electro
Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N CH, 60V, 173A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 173A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***ical
Trans MOSFET N-CH 60V 174A 3-Pin(2+Tab) D2PAK Tube
***emi
N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2.4 mOhm 186 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 60V,195A, 2.4mOhm, 186nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***(Formerly Allied Electronics)
IRFS7730PBF N-channel MOSFET Transistor; 246 A; 75 V; 3-Pin D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***emi
N-Channel Power MOSFET, 60V, 170A, 3.3mΩ, TO-263.
***et
Trans MOSFET N-CH 60V 170A 3-Pin TO-263 T/R
***or
MOSFET N-CH 60V 170A D2PAK
***r Electronics
Power Field-Effect Transistor
***el Electronic
RES SMD 324 OHM 1% 1W 2512
***ark
REEL / NCH 170A 60V TO263
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***icroelectronics
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
भाग # Mfg। विवरण स्टक मूल्य
IRFS7537TRLPBF
DISTI # V72:2272_13891331
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 75000:$1.0662
  • 30000:$1.0681
  • 15000:$1.0699
  • 6000:$1.0718
  • 3000:$1.0737
  • 1000:$1.0754
  • 500:$1.2544
  • 250:$1.3904
  • 100:$1.3947
  • 50:$1.6177
  • 25:$1.6597
  • 10:$1.6666
  • 1:$1.8814
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBFCT-ND
Infineon Technologies AGMOSFET N CH 60V 173A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
775In Stock
  • 100:$2.2303
  • 10:$2.7370
  • 1:$3.0100
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBFDKR-ND
Infineon Technologies AGMOSFET N CH 60V 173A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
775In Stock
  • 100:$2.2303
  • 10:$2.7370
  • 1:$3.0100
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBFTR-ND
Infineon Technologies AGMOSFET N CH 60V 173A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$1.5665
IRFS7537TRLPBF
DISTI # 31075154
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 500:$1.2544
  • 250:$1.3904
  • 100:$1.3947
  • 50:$1.6177
  • 25:$1.6597
  • 10:$1.6666
  • 8:$1.8814
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS7537TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$0.9359
  • 1600:$0.9019
  • 3200:$0.8699
  • 4800:$0.8399
  • 8000:$0.8249
IRFS7537TRLPBF
DISTI # SP001565228
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin D2PAK T/R (Alt: SP001565228)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€1.1699
  • 1600:€0.9749
  • 3200:€0.8999
  • 4800:€0.8349
  • 8000:€0.7799
IRFS7537TRLPBF
DISTI # 942-IRFS7537TRLPBF
Infineon Technologies AGMOSFET MOSFET N CH 60V 173A D2PAK
RoHS: Compliant
849
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
  • 800:$1.1800
IRFS7537TRLPBF
DISTI # IRFS7537PBF-GURT
Infineon Technologies AGN-Ch 60V 173A 230W 0,0033R DPak
RoHS: Compliant
0
  • 10:€1.3900
  • 50:€1.0900
  • 200:€0.9920
  • 500:€0.9550
IRFS7537TRLPBF
DISTI # 2781141
Infineon Technologies AGMOSFET, N-CH, 60V, 173A, TO-263AB
RoHS: Compliant
94
  • 1:£2.0600
  • 10:£1.5400
  • 100:£1.2400
  • 250:£1.0700
  • 500:£0.8900
IRFS7537TRLPBF
DISTI # 2781141
Infineon Technologies AGMOSFET, N-CH, 60V, 173A, TO-263AB
RoHS: Compliant
94
  • 1:$2.7400
  • 10:$2.5600
  • 100:$2.2700
  • 250:$2.1400
  • 500:$2.0300
  • 1000:$1.9300
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उपलब्धता
स्टक:
846
अर्डर मा:
2829
मात्रा प्रविष्ट गर्नुहोस्:
IRFS7537TRLPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.३९
US$ २.३९
10
US$ २.०३
US$ २०.३०
100
US$ १.६२
US$ १६२.००
500
US$ १.४२
US$ ७१०.००
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