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SIHW33N60E-GE3

SIHW33N60E-GE3
Mfr. #:
SIHW33N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs TO-247AD
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHW33N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHW33N60E-GE3 DatasheetSIHW33N60E-GE3 Datasheet (P4-P6)SIHW33N60E-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIHW33N60E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247AD-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
33 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
99 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
100 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
278 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
54 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
60 ns
कारखाना प्याक मात्रा:
480
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
99 ns
सामान्य टर्न-अन ढिलाइ समय:
28 ns
एकाइ वजन:
1.340411 oz
Tags
SIHW3, SIHW, SIH
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 33A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AD
***
N-CH 600V TO-247
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHW33N60E-GE3
DISTI # 19270292		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		134
  • 19:$4.1077
SIHW33N60E-GE3
DISTI # SIHW33N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 2880:$3.3516
  • 960:$4.1832
  • 480:$4.6620
  • 25:$5.6700
  • 10:$5.9980
  • 1:$6.6800
SIHW33N60E-GE3
DISTI # SIHW33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin TO-247AD - Tape and Reel (Alt: SIHW33N60E-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
    SIHW33N60E-GE3
    DISTI # 68W7077    		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AD-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes134
    • 1:$2.8300
    • 10:$2.8300
    • 25:$2.8300
    • 50:$2.8300
    • 100:$2.8300
    • 500:$2.8300
    • 1000:$2.8300
    • 2500:$2.8300
    SIHW33N60E-GE3
    DISTI # 78-SIHW33N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AD
    RoHS: Compliant    		480
    • 1:$6.7200
    • 10:$5.5600
    • 100:$4.5800
    • 250:$4.4400
    • 500:$3.9800
    • 1000:$3.3600
    • 2500:$3.1900
    SIHW33N60E-GE3Vishay Intertechnologies 394
      SIHW33N60E-GE3
      DISTI # 2311569      		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AD-3
      RoHS: Compliant      		145
      • 1:$5.5500
      SIHW33N60E-GE3
      DISTI # 2311569      		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AD-3
      RoHS: Compliant      		134
      • 100:£4.2000
      • 50:£4.5000
      • 25:£4.8000
      • 10:£5.0900
      • 1:£6.1500
      SIHW33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AD
      RoHS: Compliant      		Americas -
        छवि भाग # विवरण
        SIHW33N60E-GE3

        Mfr.#: SIHW33N60E-GE3

        OMO.#: OMO-SIHW33N60E-GE3

        		 MOSFET 600V Vds 30V Vgs TO-247AD
        SIHW33N60E

        Mfr.#: SIHW33N60E

        OMO.#: OMO-SIHW33N60E-1190

        		 नयाँ र मौलिक
        SIHW33N60E-GE3

        Mfr.#: SIHW33N60E-GE3

        OMO.#: OMO-SIHW33N60E-GE3-VISHAY

        		 MOSFET N-CH 600V 33A TO-247AD
        उपलब्धता
        स्टक:
        480
        अर्डर मा:
        2463
        मात्रा प्रविष्ट गर्नुहोस्:
        SIHW33N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ६.७२
        US$ ६.७२
        10
        US$ ५.५६
        US$ ५५.६०
        100
        US$ ४.५८
        US$ ४५८.००
        250
        US$ ४.४४
        US$ १ ११०.००
        500
        US$ ३.९८
        US$ १ ९९०.००
        1000
        US$ ३.३६
        US$ ३ ३६०.००
        2500
        US$ ३.१९
        US$ ७ ९७५.००
        2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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