RN2908FE(TE85L,F)

Mfr. #:: RN2908FE(TE85L,F)
निर्माता:: Toshiba
विवरण:: Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: RN2908FE(TE85L,F) डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: RN2908FE(TE85L,F) Datasheet RN2908FE(TE85L,F) Datasheet (P4-P6)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: तोशिबा

उत्पादन कोटि:: द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती

कन्फिगरेसन:: दोहोरो

ट्रान्जिस्टर ध्रुवता:: PNP

विशिष्ट इनपुट प्रतिरोधक:: 22 kOhms

विशिष्ट प्रतिरोधी अनुपात:: 0.468

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: ES-6

DC कलेक्टर/बेस गेन hfe न्यूनतम:: 80

अधिकतम परिचालन आवृत्ति:: 200 MHz

कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:: - 50 V

निरन्तर कलेक्टर वर्तमान:: - 100 mA

पीक डीसी कलेक्टर वर्तमान:: - 100 mA

Pd - शक्ति अपव्यय:: 100 mW

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

प्याकेजिङ:: रील

उत्सर्जक - आधार भोल्टेज VEBO:: - 7 V

ब्रान्ड:: तोशिबा

च्यानल मोड:: वृद्धि

अधिकतम DC कलेक्टर वर्तमान:: - 100 mA

उत्पादन प्रकार:: BJTs - द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती

कारखाना प्याक मात्रा:: 4000

उपश्रेणी:: ट्रान्जिस्टरहरू

Tags: RN2908FE(T, RN2908F, RN2908, RN290, RN29, RN2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN2908FE(TE85L,F) विवरण

***i-Key: TRANS 2PNP PREBIAS 0.1W ES6

***ure Electronics: DTC123JKA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-59

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin SMT T/R

***ark: Transistor, Rf, Npn, 50V, 250Mhz, Sot-346-3; Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:2.2Kohm Rohs Compliant: Yes

***nell: TRANSISTOR DIGITAL SC-59 100MA NPN; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-346; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC114EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R

***ark: Transistor, Digital; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm; Resistor Ratio, R1 / R2:-; Rfrohs Compliant: Yes

***nell: TRANSISTOR, DIGITAL; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC114E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC143ZKA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-59

***p One Stop Global: Trans Digital BJT NPN 50V 100mA 3-Pin SMT T/R

***ark: Transistor Polarity:Single NPN; Collector Emitter Voltage Max NPN:50V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current:100mA; Base Input Resistor R1:4.7kohm; Base Emitter Resistor R2:47kohm; No. of Pins:3 Pin RoHS Compliant: Yes

***p One Stop Global: Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R

***ure Electronics: DDTC Series 50 V 100 mA NPN Pre-Biased Small Signal Transistor - SOT-23-3

***icontronic: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:4.7Kohm; Resistor Ratio, R1 / R2:1(Ratio); Msl:- Rohs Compliant: Yes

***ure Electronics: DDTC114UA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-323-3

***icontronic: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-323 T/R

***(Formerly Allied Electronics): NPN Biased Signal Transistor SOT-323 | Diodes Inc DDTC114EUA-7-F

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm; Resistor Ratio, R1 / R2:1(Ratio); Msl:- Rohs Compliant: Yes

***ure Electronics: DDTC114CA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3

***p One Stop Global: Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

***icontronic: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***(Formerly Allied Electronics): Trans Digital BJT NPN 100mA 3Pin SOT23 | Diodes Inc DDTC114ECA-7-F

***ark: Rf Transistor, 50V, 0.1A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DDTC114ECA-7-F

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: RN2908FE(TE85L,F) OMO.#: OMO-RN2908FE-TE85L-F-	Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz
	Mfr.#: RN2908FE OMO.#: OMO-RN2908FE-1190	नयाँ र मौलिक
	Mfr.#: RN2908FE(TE85LF)CT-ND OMO.#: OMO-RN2908FE-TE85LF-CT-ND-1190	नयाँ र मौलिक
	Mfr.#: RN2908FE(TE85LF)DKR-ND OMO.#: OMO-RN2908FE-TE85LF-DKR-ND-1190	नयाँ र मौलिक
	Mfr.#: RN2908FE(TE85LF)TR-ND OMO.#: OMO-RN2908FE-TE85LF-TR-ND-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
मात्रा प्रविष्ट गर्नुहोस्:

RN2908FE(TE85L,F) को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.३९~~; ~~US$ ०.३९~~

10: ~~US$ ०.२६~~; ~~US$ २.५९~~

100: ~~US$ ०.१३~~; ~~US$ १२.६०~~

1000: ~~US$ ०.०७~~; ~~US$ ७३.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

RN2908FE(T 4
RN2908F 5
RN2908 10
RN290 160
RN29 297
RN2 1511

RN2908FE(TE85L,F)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes