SI7137DP-T1-GE3

Mfr. #:: SI7137DP-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET -20V Vds 12V Vgs PowerPAK SO-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI7137DP-T1-GE3 डाटा पाना
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HTML Datasheet:: SI7137DP-T1-GE3 Datasheet SI7137DP-T1-GE3 Datasheet (P4-P6)SI7137DP-T1-GE3 Datasheet (P7-P9)SI7137DP-T1-GE3 Datasheet (P10-P12)SI7137DP-T1-GE3 Datasheet (P13)
ECAD Model:
थप जानकारी:: SI7137DP-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: E

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-SO-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 20 V

आईडी - निरन्तर ड्रेन वर्तमान:: 60 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 1.6 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.4 V

Vgs - गेट-स्रोत भोल्टेज:: 12 V

Qg - गेट चार्ज:: 585 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 104 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

शृङ्खला:: SI7

ट्रान्जिस्टर प्रकार:: 1 P-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 95 S

पतन समय:: 72 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 14 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 230 ns

सामान्य टर्न-अन ढिलाइ समय:: 20 ns

भाग # उपनाम:: SI7137DP-GE3

एकाइ वजन:: 0.017870 oz

Tags: SI7137DP-T1, SI7137DP-T, SI7137DP, SI7137D, SI7137, SI713, SI71, SI7

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7137DP-T1-GE3 मूल्याङ्कन र समीक्षाहरू

T***n

wow.. it amazing product. spark gap about 2cm..!i use to make this,1* 400kv boost module 1* 18650 baterry 1* 18650 usb charging circuit1* led and 220ohm resister.2* screw nuts2* switches 1* 25cm long pvc pipe and end caps works pritty well. not deathly, but it hurts. try you guys..!!

2019-01-15

A***v

The parcel was a national team. It came all that ordered. Went almost a week for this minus star. I will check in the case i will add a review, or even with these details that is still a lottery.

2019-05-13

SI7137DP-T1-GE3 विवरण

***ure Electronics: Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

***ark: MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V ;RoHS Compliant: Yes

***nell: MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-

*** Source Electronics: Trans MOSFET N-CH 20V 60A 8-Pin PowerPAK SO T/R / MOSFET N-CH 20V 60A PPAK SO-8

***ure Electronics: Single N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:45.6A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes

***ure Electronics: 20V, 50A, 2.3mohm, TrenchFET® power MOSFET, N-Channel, PowerPAK SO-8

***ical: Trans MOSFET N-CH 20V 35.4A 8-Pin PowerPAK SO EP T/R

***enic: 20V 50A 2.3m´Î@10V15A 5.2W 1.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***ment14 APAC: MOSFET,N CH,DIODE,20V,50A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1900µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35.4A; Power Dissipation Pd:5.2W; Voltage Vgs Max:12V

***hard Electronics: VISHAY SIR401DP-T1-GE3 MOSFET Transistor, P Channel, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV

***roFlash: MOSFET, P-CH, 30V, PPAK-SO8; Transistor Polarity: P Channel; Continuous Drain Cur

***nell: MOSFET, P-CH, -20V, PPAK-SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***Yang: Transistor: N-MOSFET, unipolar, 20V, 50A, 0.009ohm, 44W, -55+175 deg.C, SMD, TO252(DPAK)

***emi: N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ

***ure Electronics: N-Channel 20 V 8 mOhm Surface Mount PowerTrench Mosfet - DPAK (TO-252)

***r Electronics: Power Field-Effect Transistor, 14.7A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 20V, 50A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

***ure Electronics: Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3

***Yang: Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R - Tape and Reel

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 37 W

***ark: MOSFET,N CH,DIODE,20V,26A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On State Resistance:0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Operating Temperature Range:-55°C to +150°C; Transistor ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side

***emi: N-Channel PowerTrench® SyncFET™ MOSFET, 25V, 90A, 1.5mΩ

***ure Electronics: Single N-Channel 25 V 2.5 W 81 nC Silicon Surface Mount Mosfet - POWER 56-8

***r Electronics: Power Field-Effect Transistor, 38A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel SyncFET™ is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

SI7137DP-T1-GE3 थप जानकारी

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI7137DP-T1-GE3 DISTI # V72:2272_09215622	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R RoHS: Compliant	1471	1000:$1.1500 500:$1.1905 250:$1.3289 100:$1.3320 25:$1.6219 10:$1.6276 1:$1.8717
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	634In Stock	1000:$1.2198 500:$1.4722 100:$1.8928 10:$2.3560 1:$2.6100
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	634In Stock	1000:$1.2198 500:$1.4722 100:$1.8928 10:$2.3560 1:$2.6100
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.1026
SI7137DP-T1-GE3 DISTI # 27105003	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R RoHS: Compliant	1471	1000:$1.1500 500:$1.1905 250:$1.3289 100:$1.3320 25:$1.6219 10:$1.6276 7:$1.8717
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7137DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.1900 12000:$1.1900 18000:$1.1900 30000:$1.0900
SI7137DP-T1-GE3 DISTI # 63R6005	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 63R6005) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$2.7700 25:$2.3000 50:$2.0500 100:$1.7900 250:$1.6800 500:$1.5600 1000:$1.5000
SI7137DP-T1-GE3	Vishay Intertechnologies	Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant	9000Reel	3000:$1.6500
SI7137DP-T1-GE3 DISTI # 781-SI7137DP-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant	28226	1:$2.3100 10:$1.9200 100:$1.4900 500:$1.3000 1000:$1.2600 3000:$1.2400
SI7137DP-T1-GE3 DISTI # 2335354	Vishay Intertechnologies	MOSFET, P CH, -20V, -60A, POWERPAK SO RoHS: Compliant	5724	1:£1.7700 10:£1.4700 100:£1.1500 250:£1.0800 500:£1.0100
SI7137DP-T1-GE3 DISTI # C1S804000723516	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1471	250:$1.3258 100:$1.3289 25:$1.6162 10:$1.6219
SI7137DP-T1-GE3 DISTI # 2335354	Vishay Intertechnologies	MOSFET, P CH, -20V, -60A, POWERPAK SO RoHS: Compliant	4374	1:$3.6600 10:$3.0400 100:$2.3700 500:$2.0600 1000:$1.9800 3000:$1.9700
SI7137DP-T1-GE3 DISTI # XSFP00000063506	Vishay Siliconix	RoHS: Compliant	10095	3000:$3.3000 10095:$3.0000
SI7137DP-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - 9000	3000:$0.9980 6000:$0.9620 12000:$0.9250

सम्बन्धित उत्पादनहरु

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उपलब्धता

स्टक:: 34
अर्डर मा:: 2017
मात्रा प्रविष्ट गर्नुहोस्:

SI7137DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.३०~~; ~~US$ २.३०~~

10: ~~US$ १.९१~~; ~~US$ १९.१०~~

100: ~~US$ १.४८~~; ~~US$ १४८.००~~

500: ~~US$ १.२९~~; ~~US$ ६४५.००~~

1000: ~~US$ १.०७~~; ~~US$ १ ०७०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SI7137DP-T1 3
SI7137DP-T 4
SI7137DP 5
SI7137D 6
SI7137 9
SI713 26
SI71 214
SI7 1547

नवीनतम उत्पादनहरू

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SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
SiP32452, SiP32453 Load Switch

Vishay's load switches have a low input logic control threshold and a fast turn on time.
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SI7137DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

T***n

A***v

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes