SIHD14N60E-GE3

SIHD14N60E-GE3
Mfr. #:
SIHD14N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHD14N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD14N60E-GE3 DatasheetSIHD14N60E-GE3 Datasheet (P4-P6)SIHD14N60E-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
13 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
269 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
32 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
147 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
SIH
ब्रान्ड:
Vishay / Siliconix
पतन समय:
15 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
19 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
35 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
एकाइ वजन:
0.011993 oz
Tags
SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SIHD14N60E Series 600 V 13 A 269 mOhm 147 W SMT N-Channel Power MOSFET - TO-252
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK
*** Europe
N-CH SINGLE 600V TO252
***ark
N-Channel 600V
भाग # Mfg। विवरण स्टक मूल्य
SIHD14N60E-GE3
DISTI # V99:2348_17600318
Vishay IntertechnologiesPower MOSFET3000
  • 3000:$1.0035
  • 1000:$1.0684
  • 500:$1.2481
  • 100:$1.4741
  • 10:$1.8975
  • 1:$2.5074
SIHD14N60E-GE3
DISTI # SIHD14N60E-GE3-ND
Vishay SiliconixMOSFET N-CHANNEL 600V 13A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
2782In Stock
  • 6000:$1.0115
  • 3000:$1.0504
  • 500:$1.3616
  • 100:$1.6572
  • 25:$1.9452
  • 10:$2.0620
  • 1:$2.3000
SIHD14N60E-GE3
DISTI # 32729386
Vishay IntertechnologiesPower MOSFET3000
  • 7:$2.5074
SIHD14N60E-GE3
DISTI # SIHD14N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 13A 3-Pin TO-252 (Alt: SIHD14N60E-GE3)
RoHS: Compliant
Min Qty: 3000
Europe - 50
  • 30000:€0.9719
  • 18000:€1.0279
  • 12000:€1.1579
  • 6000:€1.4039
  • 3000:€2.0039
SIHD14N60E-GE3
DISTI # SIHD14N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 13A 3-Pin TO-252 - Tape and Reel (Alt: SIHD14N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.9499
  • 18000:$0.9759
  • 12000:$1.0039
  • 6000:$1.0459
  • 3000:$1.0779
SIHD14N60E-GE3
DISTI # 20AC3801
Vishay IntertechnologiesN-CHANNEL 600V0
  • 2500:$0.9710
  • 1000:$1.0900
  • 500:$1.2500
  • 100:$1.3900
  • 50:$1.5700
  • 25:$1.7100
  • 10:$1.8500
  • 1:$2.2600
SIHD14N60E-GE3
DISTI # 78-SIHD14N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
2614
  • 1:$2.3000
  • 10:$1.9100
  • 100:$1.4800
  • 500:$1.2900
  • 1000:$1.0700
  • 3000:$1.0000
  • 6000:$0.9630
SIHD14N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
Americas -
    छवि भाग # विवरण
    UCC24636DBVR

    Mfr.#: UCC24636DBVR

    OMO.#: OMO-UCC24636DBVR

    Gate Drivers SR CONTROLLER FOR DCM APPLICATIONS
    STF23N80K5

    Mfr.#: STF23N80K5

    OMO.#: OMO-STF23N80K5

    MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in TO-220FP package
    SIHD9N60E-GE3

    Mfr.#: SIHD9N60E-GE3

    OMO.#: OMO-SIHD9N60E-GE3

    MOSFET 600V Vds 30V Vgs DPAK (TO-252)
    CRCW08051M00FKEAC

    Mfr.#: CRCW08051M00FKEAC

    OMO.#: OMO-CRCW08051M00FKEAC

    Thick Film Resistors - SMD 1/8Watt 1Mohms 1% Commercial Use
    C0603C104M5RACTU

    Mfr.#: C0603C104M5RACTU

    OMO.#: OMO-C0603C104M5RACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.1uF 0603 X7R 20%
    T521B475M035ATE150

    Mfr.#: T521B475M035ATE150

    OMO.#: OMO-T521B475M035ATE150

    Tantalum Capacitors - Polymer SMD 35V 4.7uF 1311 20% ESR=150mOhms
    CRCW0603220KFKEAC

    Mfr.#: CRCW0603220KFKEAC

    OMO.#: OMO-CRCW0603220KFKEAC

    Thick Film Resistors - SMD 1/10Watt 220Kohms 1% Commercial Use
    KTR10EZPF7502

    Mfr.#: KTR10EZPF7502

    OMO.#: OMO-KTR10EZPF7502-ROHM-SEMI

    RES SMD 75K OHM 1% 1/8W 0805
    STF23N80K5

    Mfr.#: STF23N80K5

    OMO.#: OMO-STF23N80K5-STMICROELECTRONICS

    MOSFET N-CH 800V 16A
    CRCW08051M00FKEAC

    Mfr.#: CRCW08051M00FKEAC

    OMO.#: OMO-CRCW08051M00FKEAC-VISHAY-DALE

    D12/CRCW0805-C 100 1M0 1% ET1
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1985
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHD14N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.३०
    US$ २.३०
    10
    US$ १.९१
    US$ १९.१०
    100
    US$ १.४८
    US$ १४८.००
    500
    US$ १.२९
    US$ ६४५.००
    1000
    US$ १.०७
    US$ १ ०७०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    • SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • Compare SIHD14N60E-GE3
      SIHD12N50E vs SIHD12N50EGE3 vs SIHD14N60EGE3
    • P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    Top