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FQPF6N80CT

FQPF6N80CT
Mfr. #:
FQPF6N80CT
निर्माता:
ON Semiconductor
विवरण:
MOSFET N-CH 800V 5.5A TO-220F
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FQPF6N80CT डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
फेयरचाइल्ड
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.080072 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
TO-220-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
51 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
44 ns
उदय-समय
65 ns
Vgs-गेट-स्रोत-भोल्टेज
30 V
आईडी-निरन्तर-नाली-वर्तमान
5.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
800 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
2.5 Ohms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
47 ns
सामान्य-टर्न-अन-डिले-समय
26 ns
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
5.4 S
च्यानल-मोड
वृद्धि
Tags
FQPF6N80C, FQPF6N80, FQPF6N8, FQPF6N, FQPF6, FQPF, FQP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
***et Europe
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail
***nell
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:22A; No. of Pins:3; Power Dissipation:51W; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
भाग # Mfg। विवरण स्टक मूल्य
FQPF6N80CT
DISTI # FQPF6N80CT-ND		ON SemiconductorMOSFET N-CH 800V 5.5A TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		757In Stock
  • 500:$1.3296
  • 100:$1.7095
  • 10:$2.1270
  • 1:$2.3600
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8239
  • 2000:$0.8189
  • 4000:$0.8079
  • 6000:$0.7979
  • 10000:$0.7779
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3049
  • 10:€1.0679
  • 25:€0.9129
  • 50:€0.8289
  • 100:€0.8159
  • 500:€0.8029
  • 1000:€0.7909
FQPF6N80CTFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		70
  • 1000:$1.1800
  • 500:$1.2400
  • 100:$1.2900
  • 25:$1.3500
  • 1:$1.4500
FQPF6N80CT
DISTI # 512-FQPF6N80CT		ON SemiconductorMOSFET 800V N-Ch Adv Q-FET C-Series
RoHS: Compliant		734
  • 1:$2.0400
  • 10:$1.7300
  • 100:$1.3900
  • 500:$1.2100
  • 1000:$1.0100
  • 2000:$0.9330
  • 5000:$0.8980
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 नयाँ र मौलिक
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OMO.#: OMO-FQPF6N40C-ON-SEMICONDUCTOR

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FQPF6N60C,6N60C

Mfr.#: FQPF6N60C,6N60C

OMO.#: OMO-FQPF6N60C-6N60C-1190

 नयाँ र मौलिक
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Mfr.#: FQPF6N90

OMO.#: OMO-FQPF6N90-ON-SEMICONDUCTOR

 MOSFET N-CH 900V 3.4A TO-220F
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
FQPF6N80CT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.९१
US$ ०.९१
10
US$ ०.८६
US$ ८.६१
100
US$ ०.८२
US$ ८१.५३
500
US$ ०.७७
US$ ३८५.००
1000
US$ ०.७२
US$ ७२४.७०
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