SIS932EDN-T1-GE3

Mfr. #:: SIS932EDN-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIS932EDN-T1-GE3 डाटा पाना
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HTML Datasheet:: SIS932EDN-T1-GE3 Datasheet SIS932EDN-T1-GE3 Datasheet (P4-P6)SIS932EDN-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:: SIS932EDN-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-1212-8

च्यानलहरूको संख्या:: 2 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 6 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 22 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.4 V

Vgs - गेट-स्रोत भोल्टेज:: 12 V

Qg - गेट चार्ज:: 9.2 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 23 W

कन्फिगरेसन:: दोहोरो

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET, PowerPAK

प्याकेजिङ:: रील

शृङ्खला:: SIS

ट्रान्जिस्टर प्रकार:: 2 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 45 S

पतन समय:: 5 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 35 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 32 ns

सामान्य टर्न-अन ढिलाइ समय:: 15 ns

Tags: SIS9, SIS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS932EDN-T1-GE3 विवरण

***et: TrenchFET Power MOSFET N-Channel Dual 30V VDS ±12V VGS 6A ID 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R

***i-Key: MOSFET N-CH DL 30V PWRPAK 1212-8

***ark: Mosfet, Dual N-Ch, 60V, Powerpak 1212; Transistor Polarity:dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Powerrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 60V, POWERPAK 1212; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:23W; Transistor Case Style:PowerPAK 1212; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, DOPPIO CA-N 60V POWERPAK 1212; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.018ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1.4V; Dissipazione di Potenza Pd:23W; Modello Case Transistor:PowerPAK 1212; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SIS932EDN-T1-GE3 थप जानकारी

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SIS932EDN-T1-GE3 DISTI # V72:2272_21388856	Vishay Intertechnologies	SIS932EDN-T1-GE3	6000	75000:$0.1920 30000:$0.1962 15000:$0.2005 6000:$0.2047 3000:$0.2186 1000:$0.2300 500:$0.2995 250:$0.3638 100:$0.3773 50:$0.4835 25:$0.5020 10:$0.5558 1:$0.7252
SIS932EDN-T1-GE3 DISTI # V99:2348_21388856	Vishay Intertechnologies	SIS932EDN-T1-GE3	0	6000000:$0.2078 3000000:$0.2080 600000:$0.2163 60000:$0.2288 6000:$0.2308
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH DL 30V PWRPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9005In Stock	1000:$0.2607 500:$0.3374 100:$0.4294 10:$0.5750 1:$0.6700
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH DL 30V PWRPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9005In Stock	1000:$0.2607 500:$0.3374 100:$0.4294 10:$0.5750 1:$0.6700
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH DL 30V PWRPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1906 15000:$0.2010 6000:$0.2159 3000:$0.2308
SIS932EDN-T1-GE3 DISTI # 33136743	Vishay Intertechnologies	SIS932EDN-T1-GE3	6000	30000:$0.1962 15000:$0.2005 6000:$0.2047 3000:$0.2186 1000:$0.2300 500:$0.2995 250:$0.3638 100:$0.3773 50:$0.4835 32:$0.5020
SIS932EDN-T1-GE3 DISTI # SIS932EDN-T1-GE3	Vishay Intertechnologies	TrenchFET Power MOSFET N-Channel Dual 30V VDS ±12V VGS 6A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS932EDN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.1809 30000:$0.1859 18000:$0.1919 12000:$0.1999 6000:$0.2059
SIS932EDN-T1-GE3 DISTI # 59AC7464	Vishay Intertechnologies	DUAL N-CHANNEL 30-V (D-S) MOSFET	0	50000:$0.1830 30000:$0.1920 20000:$0.2060 10000:$0.2200 5000:$0.2390 1:$0.2440
SIS932EDN-T1-GE3 DISTI # 78-SIS932EDN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	8937	1:$0.6700 10:$0.5110 100:$0.3800 500:$0.3110 1000:$0.2410 3000:$0.2190 6000:$0.2050 9000:$0.1910 24000:$0.1810
SIS932EDN-T1-GE3 DISTI # 2846633	Vishay Intertechnologies	MOSFET, DUAL N-CH, 60V, POWERPAK 1212	6000	500:£0.2380 250:£0.2650 100:£0.2910 10:£0.4340 1:£0.5940
SIS932EDN-T1-GE3 DISTI # 2846633	Vishay Intertechnologies	MOSFET, DUAL N-CH, 60V, POWERPAK 1212 RoHS: Compliant	6000	1000:$0.3930 500:$0.5090 100:$0.6480 5:$0.8670

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: THS4032CD OMO.#: OMO-THS4032CD	High Speed Operational Amplifiers Dual 100MHz
	Mfr.#: OPA140AIDBVT OMO.#: OMO-OPA140AIDBVT	Precision Amplifiers 11MHz,Sgl Supply,Low Noise,Prec,R-R Out
	Mfr.#: REF5025IDGKT OMO.#: OMO-REF5025IDGKT	Voltage References Lo Noise Very Lo Drift Prec Vltg Ref
	Mfr.#: TXB0102DCUR OMO.#: OMO-TXB0102DCUR	Translation - Voltage Levels 2B Bidir Vltg-Level Translator
	Mfr.#: LMZ10503EXTTZ/NOPB OMO.#: OMO-LMZ10503EXTTZ-NOPB	Switching Voltage Regulators 3A Pwr Mod
	Mfr.#: MRJ-5381-01 OMO.#: OMO-MRJ-5381-01	Modular Connectors / Ethernet Connectors RJ45 PCB RECPT RA IP67 YEL/GRN LED NKL
	Mfr.#: INA2180A3IDGKR OMO.#: OMO-INA2180A3IDGKR	Current Sense Amplifiers Dual Channel, 26V, Low-/High-Side Voltage Output Current Sense Amp 8-VSSOP -40 to 125
	Mfr.#: MRJ-5381-01 OMO.#: OMO-MRJ-5381-01-AMPHENOL-ICC	Modular Connectors / Ethernet Connectors RJ45 PCB RECPT RA IP67 YEL/GRN LED NKL
	Mfr.#: THS4032CD OMO.#: OMO-THS4032CD-TEXAS-INSTRUMENTS	High Speed Operational Amplifiers Dual 100MHz
	Mfr.#: OPA140AIDBVT OMO.#: OMO-OPA140AIDBVT-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps 11MHz,Sgl Supply,Low Noise,Prec,R-R Out

उपलब्धता

स्टक:: Available
अर्डर मा:: 1991
मात्रा प्रविष्ट गर्नुहोस्:

SIS932EDN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.६७~~; ~~US$ ०.६७~~

10: ~~US$ ०.५१~~; ~~US$ ५.११~~

100: ~~US$ ०.३८~~; ~~US$ ३८.००~~

500: ~~US$ ०.३१~~; ~~US$ १५५.५०~~

1000: ~~US$ ०.२४~~; ~~US$ २४१.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SIS9 131
SIS 843

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SIS932EDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes