IPB144N12N3 G

Mfr. #:: IPB144N12N3 G
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB144N12N3 G डाटा पाना
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ECAD Model:
थप जानकारी:: IPB144N12N3 G थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 120 V

आईडी - निरन्तर ड्रेन वर्तमान:: 56 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 12.3 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 49 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 107 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 4.4 mm

लम्बाइ:: 10 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 9.25 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 31 S

पतन समय:: 4 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 9 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 24 ns

सामान्य टर्न-अन ढिलाइ समय:: 16 ns

भाग # उपनाम:: IPB144N12N3GATMA1 IPB144N12N3GXT SP000694166

एकाइ वजन:: 0.139332 oz

Tags: IPB144, IPB14, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB144N12N3 G थप जानकारी

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB144N12N3GATMA1 DISTI # V72:2272_06384193	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB144N12N3GATMA1 DISTI # V36:1790_06384193	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 120V 56A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2821In Stock	500:$1.0798 100:$1.3143 10:$1.6350 1:$1.8200
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 120V 56A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2821In Stock	500:$1.0798 100:$1.3143 10:$1.6350 1:$1.8200
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 120V 56A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.7624 5000:$0.7788 2000:$0.8087 1000:$0.8686
IPB144N12N3 G DISTI # IPB144N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin TO-263 T/R (Alt: IPB144N12N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$0.6894 25000:$0.6982 10000:$0.7073 5000:$0.7166 3000:$0.7359 2000:$0.7564 1000:$0.7780
IPB144N12N3 G DISTI # SP000694166	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin TO-263 T/R (Alt: SP000694166) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.6729 6000:€0.7179 4000:€0.8249 2000:€0.9869 1000:€1.1769
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB144N12N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.6909 6000:$0.7039 4000:$0.7289 2000:$0.7559 1000:$0.7839
IPB144N12N3GATMA1 DISTI # SP000694166	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin(2+Tab) TO-263 (Alt: SP000694166) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€0.6339 6000:€0.6829 4000:€0.7399 2000:€0.8079 1000:€0.9869
IPB144N12N3GATMA1 DISTI # 50Y2009	Infineon Technologies AG	MOSFET Transistor, N Channel, 41 A, 120 V, 0.0123 ohm, 10 V, 3 V RoHS Compliant: Yes	0	500:$0.9640 250:$1.0300 100:$1.1000 50:$1.1900 25:$1.2800 10:$1.3700 1:$1.6200
IPB144N12N3 G DISTI # 726-IPB144N12N3G	Infineon Technologies AG	MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 RoHS: Compliant	4434	1:$1.6000 10:$1.3600 100:$1.0900 500:$0.9540 1000:$0.7900 2000:$0.7360 5000:$0.7090 10000:$0.6810
IPB144N12N3GATMA1 DISTI # 726-IPB144N12N3GATMA	Infineon Technologies AG	MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 RoHS: Compliant	892	1:$1.6000 10:$1.3600 100:$1.0900 500:$0.9540 1000:$0.7900 2000:$0.7360 5000:$0.7090 10000:$0.6810
IPB144N12N3GATMA1 DISTI # 8977201P	Infineon Technologies AG	MOSFET N-CHANNEL 120V 56A OPTIMOS TO263, RL	230	500:£0.7050 200:£0.7520 100:£0.8010 20:£0.9200
IPB144N12N3GATMA1 DISTI # 2480804	Infineon Technologies AG	MOSFET, N-CH, 120V, 41A, TO-263-3 RoHS: Compliant	473	5000:$1.1000 2000:$1.1400 1000:$1.2200 500:$1.4700 100:$1.6800 10:$2.1000 1:$2.4600
IPB144N12N3GATMA1 DISTI # 2480804RL	Infineon Technologies AG	MOSFET, N-CH, 120V, 41A, TO-263-3 RoHS: Compliant	0	5000:$1.1000 2000:$1.1400 1000:$1.2200 500:$1.4700 100:$1.6800 10:$2.1000 1:$2.4600
IPB144N12N3GATMA1 DISTI # 2480804	Infineon Technologies AG	MOSFET, N-CH, 120V, 41A, TO-263-3	478	500:£0.7430 250:£0.7960 100:£0.8490 25:£1.0600 5:£1.1600

सम्बन्धित उत्पादनहरु

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	Mfr.#: TLV2314IDGKR OMO.#: OMO-TLV2314IDGKR-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps TLVx314 3-MHz, Low-Power, Low-Noise, RRIO, CMOS Operational Amplifiers 8-VSSOP -40 to 125
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उपलब्धता

स्टक:: Available
अर्डर मा:: 1987
मात्रा प्रविष्ट गर्नुहोस्:

IPB144N12N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.६०~~; ~~US$ १.६०~~

10: ~~US$ १.३६~~; ~~US$ १३.६०~~

100: ~~US$ १.०९~~; ~~US$ १०९.००~~

500: ~~US$ ०.९५~~; ~~US$ ४७७.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

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IPB144N12N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes