AS4C128M16D2A-25BANTR

AS4C128M16D2A-25BANTR
Mfr. #:
AS4C128M16D2A-25BANTR
निर्माता:
Alliance Memory
विवरण:
DRAM 2G 1.8V 128Mx16 400MHz DDR2 A-Temp
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
AS4C128M16D2A-25BANTR डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
AS4C128M16D2A-25BANTR थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
गठबन्धन मेमोरी
उत्पादन कोटि:
DRAM
RoHS:
Y
प्रकार:
SDRAM - DDR2
डाटा बस चौडाइ:
16 bit
संगठन:
128 M x 16
प्याकेज / केस:
FBGA-84
मेमोरी साइज:
2 Gbit
अधिकतम घडी आवृत्ति:
400 MHz
पहुँच समय:
0.4 ns
आपूर्ति भोल्टेज - अधिकतम:
1.9 V
आपूर्ति भोल्टेज - न्यूनतम:
1.7 V
हालको आपूर्ति - अधिकतम:
408 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 105 C
शृङ्खला:
AS4C128M16D2A-25
प्याकेजिङ:
रील
ब्रान्ड:
गठबन्धन मेमोरी
माउन्टिङ शैली:
SMD/SMT
नमी संवेदनशील:
हो
उत्पादन प्रकार:
DRAM
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
मेमोरी र डाटा भण्डारण
Tags
AS4C128M16D2A, AS4C128M16D2, AS4C128M16D, AS4C128M1, AS4C12, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR2 SDRAM
Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1 and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
छवि भाग # विवरण
AS4C128M16D2A-25BAN

Mfr.#: AS4C128M16D2A-25BAN

OMO.#: OMO-AS4C128M16D2A-25BAN

DRAM 2G 1.8V 128Mx16 400MHz DDR2 A-Temp
AS4C128M16D3-12BIN

Mfr.#: AS4C128M16D3-12BIN

OMO.#: OMO-AS4C128M16D3-12BIN

DRAM 2G, 1.5V, 1600Mhz 128M x 16 DDR3
AS4C128M16D3L-12BINTR

Mfr.#: AS4C128M16D3L-12BINTR

OMO.#: OMO-AS4C128M16D3L-12BINTR

DRAM 2G 1.35V 1600Mhz 128M x 16 DDR3
AS4C128M16D3L-12BIN

Mfr.#: AS4C128M16D3L-12BIN

OMO.#: OMO-AS4C128M16D3L-12BIN

DRAM 2G 1.35V 1600Mhz 128M x 16 DDR3
AS4C128M16D3LA-12BCN

Mfr.#: AS4C128M16D3LA-12BCN

OMO.#: OMO-AS4C128M16D3LA-12BCN

DRAM 2G 1.35V 800MHz 128M x 16 DDR3
AS4C128M16D3LA-12BCN

Mfr.#: AS4C128M16D3LA-12BCN

OMO.#: OMO-AS4C128M16D3LA-12BCN-ALLIANCE-MEMORY

IC DRAM 2G PARALLEL 96FBGA
AS4C128M16D3L-12BCNTR

Mfr.#: AS4C128M16D3L-12BCNTR

OMO.#: OMO-AS4C128M16D3L-12BCNTR-ALLIANCE-MEMORY

DRAM 2G 1.35V 1600Mhz 128M x 16 DDR3
AS4C128M16D3B-12BCN

Mfr.#: AS4C128M16D3B-12BCN

OMO.#: OMO-AS4C128M16D3B-12BCN-ALLIANCE-MEMORY

IC DRAM 2G PARALLEL 96FBGA
AS4C128M16D3B-12BCNTR

Mfr.#: AS4C128M16D3B-12BCNTR

OMO.#: OMO-AS4C128M16D3B-12BCNTR-ALLIANCE-MEMORY

IC DRAM 2G PARALLEL 96FBGA
AS4C128M16D3A-12BCNTR

Mfr.#: AS4C128M16D3A-12BCNTR

OMO.#: OMO-AS4C128M16D3A-12BCNTR-ALLIANCE-MEMORY

IC DRAM 2G PARALLEL 96FBGA
उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
AS4C128M16D2A-25BANTR को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
Top