SI4501BDY-T1-GE3

Mfr. #:: SI4501BDY-T1-GE3
निर्माता:: Vishay
विवरण:: MOSFET N/P-CH 30V/8V 8SOIC
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI4501BDY-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - arrays

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI4501BDY-GE3

एकाइ - वजन: 0.019048 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 8-SOIC (0.154", 3.90mm Width)

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 8-SOIC

कन्फिगरेसन: N- च्यानल P- च्यानल

FET-प्रकार: N र P- च्यानल, साझा नाली

पावर-अधिकतम: 4.5W, 3.1W

ट्रान्जिस्टर-प्रकार: 1 N-Channel 1 P-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 30V, 8V

इनपुट-Capacitance-Ciss-Vds: 805pF @ 15V

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 12A, 8A

Rds-on-max-Id-Vgs: 17 mOhm @ 10A, 10V

Vgs-th-max-Id: 2V @ 250μA

गेट-चार्ज-Qg-Vgs: 25nC @ 10V

Pd-शक्ति-डिसिपेशन: 4.5 W

पतन-समय: 8 ns 9 ns

उदय-समय: 11 ns 12 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V 8 V

आईडी-निरन्तर-नाली-वर्तमान: 12 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 30 V - 8 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 13.5 mOhms 21 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल P- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 15 ns 35 ns

सामान्य-टर्न-अन-डिले-समय: 7 ns 6 ns

Qg-गेट-चार्ज: 16.5 nC 27.5 nC

फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम: 29 S 24 S

Tags: SI4501B, SI4501, SI450, SI45, SI4

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI4501BDY-T1-GE3 DISTI # V72:2272_09216524	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4133 1:$0.4862
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.2552
SI4501BDY-T1-GE3 DISTI # 30697489	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 29:$0.4116
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R (Alt: SI4501BDY-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.4119 10:€0.2809 25:€0.2419 50:€0.2229 100:€0.2149 500:€0.2109 1000:€0.2079
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R - Tape and Reel (Alt: SI4501BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI4501BDY-T1-GE3 DISTI # 67X6866	Vishay Intertechnologies	MOSFET Transistor, N and P Channel, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV	0	1:$0.2760 2500:$0.2630 5000:$0.2450 7500:$0.2280
SI4501BDY-T1-GE3 DISTI # 70616179	Vishay Siliconix	SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor,6.4 A,12 A,8V,30V,8-Pin SOIC RoHS: Compliant	0	100:$0.4700 500:$0.4200 1500:$0.3700 2500:$0.3400
SI4501BDY-T1-GE3 DISTI # 78-SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR RoHS: Compliant	1545	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2680 2500:$0.2670
SI4501BDY-T1-GE3 DISTI # 8123227P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 30V/8V 9A/6.4A, RL	1680	100:£0.3060 500:£0.2520 1500:£0.2140 2500:£0.2090
SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR	Americas -
SI4501BDY-T1-GE3 DISTI # C1S803605378402	Vishay Intertechnologies	MOSFETs	2262	250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4134
SI4501BDY-T1-GE3 DISTI # 2056722	Vishay Intertechnologies	MOSFET, NP CH, W/D, 30V/8V, SO8 RoHS: Compliant	0	5:£0.4470 25:£0.3870 100:£0.3270 250:£0.2980 500:£0.2690

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI4501BDY-T1-GE3 OMO.#: OMO-SI4501BDY-T1-GE3	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
	Mfr.#: SI4501BDY OMO.#: OMO-SI4501BDY-1190	नयाँ र मौलिक
	Mfr.#: SI4501BDY-T1-E3 OMO.#: OMO-SI4501BDY-T1-E3-1190	नयाँ र मौलिक
	Mfr.#: SI4501BDY-T1-GE3 OMO.#: OMO-SI4501BDY-T1-GE3-VISHAY	MOSFET N/P-CH 30V/8V 8SOIC

उपलब्धता

स्टक:: Available
अर्डर मा:: 2000
मात्रा प्रविष्ट गर्नुहोस्:

SI4501BDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.३१~~; ~~US$ ०.३१~~

10: ~~US$ ०.२९~~; ~~US$ २.९२~~

100: ~~US$ ०.२८~~; ~~US$ २७.६६~~

500: ~~US$ ०.२६~~; ~~US$ १३०.६०~~

1000: ~~US$ ०.२५~~; ~~US$ २४५.९०~~

बाट सुरु गर्नुहोस्

SI4501B 3
SI4501 18
SI450 32
SI45 151
SI4 2994

SI4501BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes