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SI4501BDY-T1-GE3

SI4501BDY-T1-GE3
Mfr. #:
SI4501BDY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4501BDY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
एन-च्यानल, पी-च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V, 8 V
आईडी - निरन्तर ड्रेन वर्तमान:
9.5 A, 6.4 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
17 mOhms, 27 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
800 mV, 450 mV
Vgs - गेट-स्रोत भोल्टेज:
20 V, 8 V
Qg - गेट चार्ज:
25 nC, 42 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
4.5 W, 3.1 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI4
ट्रान्जिस्टर प्रकार:
1 N-Channel, 1 P-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
29 S, 24 S
पतन समय:
10 ns, 14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
55 ns, 18 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns, 34 ns
सामान्य टर्न-अन ढिलाइ समय:
16 ns, 22 ns
भाग # उपनाम:
SI4501BDY-GE3
एकाइ वजन:
0.019048 oz
Tags
SI4501B, SI4501, SI450, SI45, SI4
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 6.4 A; 12 A; 8V; 30V; 8-Pin SOIC
***ical
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, NP CH, W/D, 30V/8V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:4.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:12A; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-8V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.0135ohm; On Resistance Rds(on), P Channel:0.021ohm; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:4.5W
भाग # Mfg। विवरण स्टक मूल्य
SI4501BDY-T1-GE3
DISTI # V72:2272_09216524		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
RoHS: Compliant		2262
  • 1000:$0.2460
  • 500:$0.2753
  • 250:$0.3234
  • 100:$0.3345
  • 25:$0.4116
  • 10:$0.4133
  • 1:$0.4862
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1756In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1756In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.2552
SI4501BDY-T1-GE3
DISTI # 30697489		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
RoHS: Compliant		2262
  • 1000:$0.2460
  • 500:$0.2753
  • 250:$0.3234
  • 100:$0.3345
  • 29:$0.4116
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R (Alt: SI4501BDY-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€0.4119
  • 10:€0.2809
  • 25:€0.2419
  • 50:€0.2229
  • 100:€0.2149
  • 500:€0.2109
  • 1000:€0.2079
SI4501BDY-T1-GE3
DISTI # SI4501BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R - Tape and Reel (Alt: SI4501BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2319
  • 5000:$0.2249
  • 10000:$0.2159
  • 15000:$0.2099
  • 25000:$0.2049
SI4501BDY-T1-GE3
DISTI # 67X6866		Vishay IntertechnologiesMOSFET Transistor, N and P Channel, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV0
  • 1:$0.2760
  • 2500:$0.2630
  • 5000:$0.2450
  • 7500:$0.2280
SI4501BDY-T1-GE3
DISTI # 70616179		Vishay SiliconixSI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor,6.4 A,12 A,8V,30V,8-Pin SOIC
RoHS: Compliant		0
  • 100:$0.4700
  • 500:$0.4200
  • 1500:$0.3700
  • 2500:$0.3400
SI4501BDY-T1-GE3
DISTI # 78-SI4501BDY-T1-GE3		Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
RoHS: Compliant		1545
  • 1:$0.6400
  • 10:$0.5110
  • 100:$0.3880
  • 500:$0.3200
  • 1000:$0.2680
  • 2500:$0.2670
SI4501BDY-T1-GE3
DISTI # 8123227P		Vishay IntertechnologiesTRANS MOSFET N/P-CH 30V/8V 9A/6.4A, RL1680
  • 100:£0.3060
  • 500:£0.2520
  • 1500:£0.2140
  • 2500:£0.2090
SI4501BDY-T1-GE3Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SO-8 N&P PAIRAmericas -
    SI4501BDY-T1-GE3
    DISTI # C1S803605378402    		Vishay IntertechnologiesMOSFETs2262
    • 250:$0.3234
    • 100:$0.3345
    • 25:$0.4116
    • 10:$0.4134
    SI4501BDY-T1-GE3
    DISTI # 2056722    		Vishay IntertechnologiesMOSFET, NP CH, W/D, 30V/8V, SO8
    RoHS: Compliant    		0
    • 5:£0.4470
    • 25:£0.3870
    • 100:£0.3270
    • 250:£0.2980
    • 500:£0.2690
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    KTR10EZPF5601

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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1988
    मात्रा प्रविष्ट गर्नुहोस्:
    SI4501BDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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