SI4804BDY-T1-E3

Mfr. #:: SI4804BDY-T1-E3
निर्माता:: Vishay
विवरण:: IGBT Transistors MOSFET 30V 7.5A 2W
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI4804BDY-T1-E3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4804BDY-T1-E3 Datasheet SI4804BDY-T1-E3 Datasheet (P4-P6)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - arrays

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR

अंश-उपनामहरू: SI4804BDY-E3

एकाइ - वजन: 0.006596 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 8-SOIC (0.154", 3.90mm Width)

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 8-SO

कन्फिगरेसन: दोहोरो

FET-प्रकार: 2 N-Channel (Dual)

पावर-अधिकतम: 1.1W

ट्रान्जिस्टर-प्रकार: 2 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 30V

इनपुट-Capacitance-Ciss-Vds: -

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 5.7A

Rds-on-max-Id-Vgs: 22 mOhm @ 7.5A, 10V

Vgs-th-max-Id: 3V @ 250μA

गेट-चार्ज-Qg-Vgs: 11nC @ 4.5V

Pd-शक्ति-डिसिपेशन: 1.1 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 10 ns

उदय-समय: 10 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 5.7 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 30 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 22 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 19 ns

सामान्य-टर्न-अन-डिले-समय: 9 ns

च्यानल-मोड: वृद्धि

Tags: SI4804BDY-T1-E, SI4804BDY-T, SI4804BDY, SI4804BD, SI4804B, SI4804, SI480, SI48, SI4

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4804BDY-T1-E3 विवरण

***th Star Micro: Transistor MOSFET N-CH 30V 5.7A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7.5A; On Resistance, Rds(on):0.022ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, NN, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:7.5A; Resistance, Rds On:0.022ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:7nC; No. of Pins:8; Power, Pd:1.1W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.022ohm; Resistance, Rds on @ Vgs = 10V N Channel:0.022ohm; Resistance, Rds on @ Vgs = 4.5V:0.03ohm; Transistors, No. of:2; Voltage, Vds Max:30V; Width, Tape:12mm

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI4804BDY-T1-E3 DISTI # SI4804BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4804BDY-T1-E3 DISTI # SI4804BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI4804BDY-T1-E3 DISTI # SI4804BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI4804BDY-T1-E3 DISTI # 781-SI4804BDY-E3	Vishay Intertechnologies	MOSFET 30V 7.5A 2W RoHS: Compliant	0
SI4804BDY-T1-E3	Vishay Siliconix	5700 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	1960	511:$0.3500 90:$0.3920 1:$1.1200
SI4804BDY-T1-E3	Vishay Siliconix		1344
SI4804BDYT1E3	Vishay Semiconductors	INSTOCK	1436

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI4804BDY-T1-GE3 OMO.#: OMO-SI4804BDY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
	Mfr.#: SI4804BDY-T1-E3 OMO.#: OMO-SI4804BDY-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 7.5A 2W
	Mfr.#: SI4804B OMO.#: OMO-SI4804B-1190	नयाँ र मौलिक
	Mfr.#: SI4804BDT-T1-E3 OMO.#: OMO-SI4804BDT-T1-E3-1190	नयाँ र मौलिक
	Mfr.#: SI4804BDY OMO.#: OMO-SI4804BDY-1190	नयाँ र मौलिक
	Mfr.#: SI4804BDY-T1 OMO.#: OMO-SI4804BDY-T1-1190	नयाँ र मौलिक
	Mfr.#: SI4804BDY-T1-E3 (PB) OMO.#: OMO-SI4804BDY-T1-E3-PB--1190	नयाँ र मौलिक
	Mfr.#: SI4804BDY-T1-E3 GE3 OMO.#: OMO-SI4804BDY-T1-E3-GE3-1190	नयाँ र मौलिक
	Mfr.#: SI4804BDY-T1-E3. OMO.#: OMO-SI4804BDY-T1-E3--1190	नयाँ र मौलिक
	Mfr.#: SI4804BDY-T1-GE3 OMO.#: OMO-SI4804BDY-T1-GE3-VISHAY	MOSFET 2N-CH 30V 5.7A 8SOIC

उपलब्धता

स्टक:: Available
अर्डर मा:: 1500
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सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.५२~~; ~~US$ ०.५२~~

10: ~~US$ ०.५०~~; ~~US$ ४.९९~~

100: ~~US$ ०.४७~~; ~~US$ ४७.२५~~

500: ~~US$ ०.४५~~; ~~US$ २२३.१५~~

1000: ~~US$ ०.४२~~; ~~US$ ४२०.००~~

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बाट सुरु गर्नुहोस्

SI4804BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes