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SIHB12N50E-GE3

SIHB12N50E-GE3
Mfr. #:
SIHB12N50E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB12N50E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N50E-GE3 DatasheetSIHB12N50E-GE3 Datasheet (P4-P6)SIHB12N50E-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SIHB12N50E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
550 V
आईडी - निरन्तर ड्रेन वर्तमान:
10.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
380 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
25 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
114 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
थोक
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
12 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
16 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
29 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
***ark
Transistor Polarity:N Channel
***et
N-CHANNEL 500V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 10.5A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		12In Stock
  • 1000:$1.2282
  • 500:$1.4823
  • 100:$1.9058
  • 10:$2.3720
  • 1:$2.6300
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N50E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1199
  • 2000:$1.0869
  • 4000:$1.0429
  • 6000:$1.0139
  • 10000:$0.9869
SIHB12N50E-GE3
DISTI # 43Y2393		Vishay IntertechnologiesMOSFET Transistor, N Channel, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V RoHS Compliant: Yes747
  • 1:$2.4000
  • 10:$1.9900
  • 25:$1.8400
  • 50:$1.6900
  • 100:$1.5400
  • 250:$1.4500
  • 500:$1.3500
SIHB12N50E-GE3
DISTI # 78-SIHB12N50E-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		997
  • 1:$2.4000
  • 10:$1.9900
  • 100:$1.5400
  • 500:$1.3500
  • 1000:$1.2900
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 5:£1.6100
  • 25:£1.5000
  • 100:£1.1700
  • 250:£1.1000
  • 500:£1.0200
SIHB12N50E-GE3
DISTI # 2471937RL		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		0
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    छवि भाग # विवरण
    DZ2705100L

    Mfr.#: DZ2705100L

    OMO.#: OMO-DZ2705100L

    		 Zener Diodes 5.1V 5% 120mW FLT LD 0.6x1.4mm
    AS0805KRX7R0BB103

    Mfr.#: AS0805KRX7R0BB103

    OMO.#: OMO-AS0805KRX7R0BB103

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.01uF 10% 100V AEC-Q200
    AS0805KRX7R0BB103

    Mfr.#: AS0805KRX7R0BB103

    OMO.#: OMO-AS0805KRX7R0BB103-YAGEO

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.01uF 10% 100V AEC-Q200
    CRCW12061K50FKEAC

    Mfr.#: CRCW12061K50FKEAC

    OMO.#: OMO-CRCW12061K50FKEAC-VISHAY-DALE

    		 D25/CRCW1206-C 100 1K5 1% ET1
    CRCW06030000Z0EAC

    Mfr.#: CRCW06030000Z0EAC

    OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE

    		 RES SMD 0 OHM JUMP 1/10W 0603
    DZ2705100L

    Mfr.#: DZ2705100L

    OMO.#: OMO-DZ2705100L-PANASONIC

    		 Zener Diodes 5.1V 5% 120mW FLT LD 0.6x1.4mm
    C0805C474K5RACAUTO7210

    Mfr.#: C0805C474K5RACAUTO7210

    OMO.#: OMO-C0805C474K5RACAUTO7210-1190

    		 CAPACITOR CERAMIC 0.47 UF 10% TOL 50V X7R 0805
    CRCW120610R0FKEAC

    Mfr.#: CRCW120610R0FKEAC

    OMO.#: OMO-CRCW120610R0FKEAC-VISHAY-DALE

    		 D25/CRCW1206-C 100 10R 1% ET1
    F380J106MMAAH3

    Mfr.#: F380J106MMAAH3

    OMO.#: OMO-F380J106MMAAH3-AVX

    		 Tantalum Capacitors - Polymer SMD 6.3V 10uF 20% 0603 ESR=200Ohm AEC-Q200
    उपलब्धता
    स्टक:
    978
    अर्डर मा:
    2961
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHB12N50E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.३९
    US$ २.३९
    10
    US$ १.९८
    US$ १९.८०
    100
    US$ १.५४
    US$ १५४.००
    500
    US$ १.३४
    US$ ६७०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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